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MWNT Transistor
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TPL, Inc. 
Indium Corporation 
TPL, Inc. 
Polyflon Company - a Crane Co. Company
TPL, Inc.
Indium Corporation |
Products/Services for MWNT Transistor
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Nanomaterials - (266 companies)...such as flexible electronics, high density memory, nanoscale transistors, single electron devices (SEDs), or other electronic components. Over 10,000 nanoscale components can fit in the same area as a single microscale device. State-of-the-art commercial... Search by Specification | Learn More -
Transistors - (536 companies)In these circuits, the number of transistors can range from a few to a few billion. The transistor is considered to be one of the most important inventions of the 20th century because of its abundant use in most modern circuits and electronic systems... Search by Specification | Learn More -
Bipolar RF Transistors - (49 companies)RF transistors vary in terms of polarity, packaging, and packing methods. NPN is a physical bipolar junction transistor (BJT) arrangement in which the emitter and the collector are made of N-type material and the base is made of P-type material... Search by Specification | Learn More -
RF Transistors - (93 companies)...specifications (MIL-SPEC). IC Package Types. Basic integrated circuit (IC) package types for RF transistors are transistor outline (TO), small outline (SO), and small outline transistor (SOT). For each package type, many variants are available... Search by Specification | Learn More -
Darlington Transistors - (55 companies)...transistors. Darlington transistors are circuits that combine two bipolar transistors in a single device. They provide high current gain and require less space than configurations that use two discrete transistors. In Darlington pairs, transistor... Search by Specification | Learn More -
Insulated Gate Bipolar Transistors (IGBT) - (98 companies)Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching... Search by Specification | Learn More
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RF MOSFET Transistors - (35 companies)MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. RF MOSFET Transistors Information... Search by Specification | Learn More
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Power Bipolar Transistors - (84 companies)...bipolar transistors meet screening levels for military specifications (MIL-SPEC). Basic IC package types for power bipolar transistors are transistor outline (TO), small outline (SO), and small outline transistor (SOT). For each package type, many... Search by Specification | Learn More
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Small-Signal Bipolar Transistors (BJT) - (82 companies)Temperature range for small-signal bipolar transistors is measured in degrees Fahrenheit or degrees Celsius. Basic IC package types for small-signal bipolar transistors are transistor outline (TO), small outline (SO), and small outline transistor (SOT... Search by Specification | Learn More
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Unijunction Transistors (UJT) - (19 companies)...at frequencies up to 1 MHz. A unijunction transistor can be used to trigger a silicon-controlled rectifier (SCR) after a predetermined period of time. Unijunction transistors (UJTs) can be the active device in relaxation oscillators. A relaxation... Search by Specification | Learn More
Product News for MWNT Transistor
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American Microsemiconductor, Inc.
Unijunction TransistorsWHEN IS A TRANSISTOR NOT A TRANSISTOR ?. Answer: When its a unijunction transistor. Strictly speaking, the unijunction transistor is not a transistor but a thyristor.It has no linear current gain and it can't be used as an amplifier! Its typical application is to trigger an Silicon Controlled Rectifier (SCR), although its output is often used to trigger other devices.Applications include: An SCR trigger, Oscillator, Timing, Sawtooth Generator, Long Time delays, etc. An example is the 2N4949... (read more)Browse Unijunction Transistors (UJT) Datasheets for American Microsemiconductor, Inc. -
Linear Integrated Systems, Inc.
NPN and PNP Monolithic Dual TransistorsLS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Features: Low Offset/Tight Matching Monolithic Dual (0.5 to 3mV versions). High Gain (100 to 400 Beta versions). Tightly Matched Monolithic Dual (1-15mV versions). High Breakdown Voltage (25 to 60 Volt versions). Low Capacitance (cob=2pf). Designed for Low Offset, High Gain, Low drift amplification. Available in Surface Mount SOIC 8 lead and SOT23 6 lead packages. Also available in Tested Die, PDIP 8, TO-71 6, and TO-78 6 lead... (read more)Browse Small-Signal Bipolar Transistors (BJT) Datasheets for Linear Integrated Systems, Inc. -
American Microsemiconductor, Inc.
Bipolar Junction Transistor (BJT)Description of bipolar transistor. The transistor is primarily used as a current amplifier. When a small current signal is applied to the base terminal of a bipolar transistor, it is amplified in the collector circuit. This current amplification is referred to as hfe or beta and equals Ic/Ib. As with all semiconductors, breakdown voltage of a transistor is also a design limitation. There are breakdown voltages that must be taken into account for each combination of terminals of a transistor... (read more)Browse Power Bipolar Transistors Datasheets for American Microsemiconductor, Inc. -
TT Semiconductor, Inc.
HIgh Temperature Transistor ArraysFabricated in a dielectrically isolated, complementary bipolar process, each transistor is electrically insulated from the others by a layer of insulating oxide (and not the reverse-biased PN junctions used in conventional arrays) and exhibit inter-device crosstalk and DC isolation similar to TT Semiconductor expected from discrete transistors. The resulting low collector-to-substrate capacitance produces a typical NPN fT of 350MHz (325 MHz for the PNPs). Substrate biasing is not required... (read more)Browse Transistors Datasheets for TT Semiconductor, Inc. -
Mitsubishi Electric Power Products, Inc.
Insulated Gate Bipolar Transistors (IGBTs)Power Supply systems by Mitsubishi Electric. IGBT - Transistors with Excellent Performance Characteristics. Mitsubishi Electric is the leading manufacturer of Insulated Gate Bipolar Transistors (IGBTs), and now utilizes IGBTs in the converters and inverters of its 9700 Series UPS systems. These advanced, high-performance transistors provide a variety of intelligent features. High Ampacity Transistors (600A). High Speed Switching. Low Control Power. Design Features: IGBT(Converter/Inverter). 1:1... (read more)Browse Uninterruptible Power Supplies (UPS) Datasheets for Mitsubishi Electric Power Products, Inc.
Conduct Research
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History Of CNTs
Categories: HDPlas Nanomaterials. SWNTs. DWNTs. MWNTs. TWNTS. Helical MWNTs. Functionalized CNTs. OH Functionalized CNTs. COOH Functionalized CNTs. NH2 Functionalized CNTs. Short CNTs. Short OH CNTs. Short COOH CNTs. Industrial Grade CNTs. Carbon Nanotube Masterbatches. MWNT Arrays. Fullerenes...
Engineering Web Search: MWNT Transistor
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High-power lithium batteries from functionalized... data for an LBL-MWNT electrode and composite electrodes of pristine MWNT, MWNT–COOH and MWNT–NH2, with the LBL-MWNT electrode having See Nature Publishing Group Information |
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Highly conductive, printable and stretchable composite... decorated with silver nanoparticles (nAg–MWNTs). c, nAg–MWNT gel was prepared by mixing and grinding nAg–MWNTs with ionic See Nature Publishing Group Information |
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Nano-electronics in a multiwall carbon nanotube In the MWNT-SET, we observed the Coulomb blockade effect with island capacitance of 4.2 aF at 4.5 K. The observed Coulomb blockade effect meant a |
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Untitled Modern MOSFETs have channel lengths of only 50 nanometers, and billion transistor logic chips have arrived. |
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Carbon nanotube - Wikipedia, the free encyclopedia omitted in the abbreviation; for example, multi-walled carbon nanotube (MWNT). |
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Potential applications of carbon nanotubes - Wikipedia, the... Magnets?Multi-walled nanotubes (MWNT coated with magnetite can generate strong magnetic fields.) |
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Carbon nanodevices for sensors, actuators, and electronics... segmentation, an AFM tip applies a negative voltage (approximately 5V) to create defects at specified locations along the multiwall nanotube (MWNT). |
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Publications Search: Choi | Nokia Research Center See Nokia Research Center Information |
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E-16170 cover |
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von Klitzing's department Such a device exhibits transistor characteristics at the junction. |
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