Supplier: Fairchild Semiconductor Corporation
Description: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche
- Transistor Type / Technology: MOSFET
- Polarity: N-Channel
- Package Type: TO-263
- Transistor Grade / Operating Range: Commercial
Supplier: Universal Semiconductor, Inc.
Description: Apps include high speed pulse amplifiers & line drivers
- Transistor Type / Technology: MOSFET, Power MOSFET
- Polarity: N-Channel, P-Channel
- MOSFET Operating Mode: Enhancement
- Package Type: TO-92
Transistors - Silicon N-channel MOSFET low frequency power amplifier (-160V drain-source breakdown voltage) -- 2SK135Supplier: Amsyx
Description: Silicon N-channel MOSFET low frequency power amplifier (-160V drain-source breakdown voltage)
- Transistor Type / Technology: MOSFET
- Polarity: N-Channel
Metal-Oxide Semiconductor FET (MOSFET) - 3-A Peak, High Frequency, High-Side/Low-Side Driver -- UCC27200-Q1
Description: Status: ACTIVE The UCC27200/1 family of high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side/low-side driver with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active
Description: or HS Slewing at High dv/dt Low Power Consumption Wide Supply Voltage Range (8V to 14V) Supply Undervoltage Protection 1.6W/1W Typical Output Pull-Up/Pull-Down Resistance Description The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based
- Driver Type: Dual Gate Driver (Half-bridge)
IC Voltage Regulators - ISL6549Single 12V Input Supply Dual Regulator - Synchronous Rectified Buck PWM and Linear Power Controller -- ISL6549
Description: fault monitoring on both outputs Pb-free plus anneal available (RoHS compliant) Description The ISL6549 provides the power control and protection for two output voltages in high-performance applications. The dual-output controller drives two N-Channel MOSFETs in a synchronous rectified buck
- Regulator Category: Switching Regulator
Amplifier and Comparator Chips - ISL6523VRM8.5 Dual PWM and Dual Linear Power System Controller -- ISL6523
Description: Key Features Provides 4 Regulated Voltages Microprocessor Core, AGTL+ Bus, AGP Bus Power, and North/South Bridge Core Drives N-Channel MOSFETs Linear Regulator Drives Compatible with both MOSFET and Bipolar Series Pass Transistors Simple Single-Loop Control Designs Voltage-Mode PWM Control
Description: power to be conserved and the battery life to be extended under all load conditions. The 1.5 A (typical) high-side and low-side MOSFET drivers on-chip are designed to drive less expensive N-channel MOSFETs. Qualified for Automotive Applications Independent Dual-Outputs Operate 180° Out of Phase
Supplier: TRINAMIC Motion Control GmbH & Co. KG.
Description: The TMC603 is a three phase BLDC motor driver IC for highly compact and energy efficient drive solutions. Control algorithms previously only found in much more complex servo drives can now be realized with a minimum of external components. The TMC603 directly drives 6 external N-channel MOSFETs
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Universal Power MOSFET Interface IC (TC4420/9)
current, and logic inputs that can withstand up to 5V negative swings. Although designed as a power MOSFET driver, it can act as a level shifter, comparator, waveshaper and pulse transformer driver, to mention a few of its possible uses. TC4420/4429 Universal Power MOSFET Interface IC AN798
Latch-Up Protection for MOSFET Drivers
. explains how this occurs and what can be done to. Q2 N-Channel. prevent it for MOSFET drivers. Parasitic. Drain N+. CONSTRUCTION OF CMOS ICs. R2 P-Wel. Source N+. Resistance. In fabricating CMOS ICs, parasitic bipolar transistors are. VS-. formed as a by-product of the CMOS process (see. Figure 1
Power Design Considerations For LED Applications
load is designed with a dual N channel. age of D1 @ 25°C is assumed to be 0.45V and the current through. MOSFET IRF7303 20V V. while the dual electronic load for the. DSS. it is approximately 175µA. For a ∆T=45°C, the negative input of A4. green string IRF7103Q is used with 50V V. . For over current
Consider the Discrete JFET When You Have a Priority Performance Objective
. They are also comfortable with the MOSFET (metal-oxide. semiconductor field-effect transistor) as a discrete device for amplifying analog signals. and switching power signals, as well as its role as the key digital structural element in. large-scale ICs. But alongside these devices is the JFET (junction
Programmable Current Loop
gain and and parasitic capacitors. C1. DAC. =0, 20mA when DAC. =2.5V). The DC voltage out-. provides compensation to stabilize A1 and Q2. A N channel. OUT. OUT. put of the DAC. has a voltage range of -2.500 to +2.500;. low voltage MOSFET provides feedback when the current. OUT. for current sinking
by voltage overloads using devices. having greater leakage than the transistor. In addition the MOSFET has at least. asdf. ten times higher noise voltage than a low noise N channel JFET and should. never be used for very quiet preamplifiers. P channel JFETs are slightly noisier. than N channel JFETs
RF Wafer Testing: An Acute Need, and Now Practical (.pdf)
i d e n c e. Gate. CP. RWELL. CP. LL. Source. Drain. R. R. C. C. RC. COV. LL. g. COX. COV. OV. gOX gOV. LL. RS. R. C. Chan. R. R. J. Chan CJ. D. CP. R. C. WELL. P. LL. RC. Body. Figure 1. Simplified circuit model of a MOSFET DUT. The COX measurement factors to consider are. OX. parasitic capacitance
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MOSFET - Wikipedia, the free encyclopedia
electrons, inducing an n-type conductive channel in the substrate below the oxide, which allows electrons to flow between the n-doped terminals; the
Amplifier - Wikipedia, the free encyclopedia
A practical amplifier circuit An electronic amplifier or amplifier is an electronic device used for increasing the power of a signal.
MRF5S9070NR1: 880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET
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