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Nanoscale Transistors
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TPL, Inc. 
Polyflon Company - a Crane Co. Company 
TPL, Inc. 
Indium Corporation
TPL, Inc.
Indium Corporation |
Products/Services for Nanoscale Transistors
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Nanomaterials - (266 companies)...such as flexible electronics, high density memory, nanoscale transistors, single electron devices (SEDs), or other electronic components. Over 10,000 nanoscale components can fit in the same area as a single microscale device. State-of-the-art commercial... Search by Specification | Learn More -
Transistors - (536 companies)In these circuits, the number of transistors can range from a few to a few billion. The transistor is considered to be one of the most important inventions of the 20th century because of its abundant use in most modern circuits and electronic systems... Search by Specification | Learn More -
Bipolar RF Transistors - (49 companies)RF transistors vary in terms of polarity, packaging, and packing methods. NPN is a physical bipolar junction transistor (BJT) arrangement in which the emitter and the collector are made of N-type material and the base is made of P-type material... Search by Specification | Learn More -
RF Transistors - (93 companies)...specifications (MIL-SPEC). IC Package Types. Basic integrated circuit (IC) package types for RF transistors are transistor outline (TO), small outline (SO), and small outline transistor (SOT). For each package type, many variants are available... Search by Specification | Learn More -
Darlington Transistors - (55 companies)...transistors. Darlington transistors are circuits that combine two bipolar transistors in a single device. They provide high current gain and require less space than configurations that use two discrete transistors. In Darlington pairs, transistor... Search by Specification | Learn More -
Insulated Gate Bipolar Transistors (IGBT) - (98 companies)Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching... Search by Specification | Learn More
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RF MOSFET Transistors - (35 companies)MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. RF MOSFET Transistors Information... Search by Specification | Learn More
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Power Bipolar Transistors - (84 companies)...bipolar transistors meet screening levels for military specifications (MIL-SPEC). Basic IC package types for power bipolar transistors are transistor outline (TO), small outline (SO), and small outline transistor (SOT). For each package type, many... Search by Specification | Learn More
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Small-Signal Bipolar Transistors (BJT) - (82 companies)Temperature range for small-signal bipolar transistors is measured in degrees Fahrenheit or degrees Celsius. Basic IC package types for small-signal bipolar transistors are transistor outline (TO), small outline (SO), and small outline transistor (SOT... Search by Specification | Learn More
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Unijunction Transistors (UJT) - (19 companies)...at frequencies up to 1 MHz. A unijunction transistor can be used to trigger a silicon-controlled rectifier (SCR) after a predetermined period of time. Unijunction transistors (UJTs) can be the active device in relaxation oscillators. A relaxation... Search by Specification | Learn More
Product News for Nanoscale Transistors
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Polyflon Company - a Crane Co. Company
PolyMetallix Nanoscale Zero Valent IronDue to their Small Size (30 to 120 nanometers), Polyflon's PolyMetallix nanoiron particles can be directly injected into the subsurface through borings and wells, treating contaminated soils, groundwater, and DNAPL. PolyMetallix's small size, large surface area, and level of reactivity make it very suitable for in situ treatment applications. Patent US 7,641,971 (read more)Browse Nanomaterials Datasheets for Polyflon Company - a Crane Co. Company -
American Microsemiconductor, Inc.
Unijunction TransistorsWHEN IS A TRANSISTOR NOT A TRANSISTOR ?. Answer: When its a unijunction transistor. Strictly speaking, the unijunction transistor is not a transistor but a thyristor.It has no linear current gain and it can't be used as an amplifier! Its typical application is to trigger an Silicon Controlled Rectifier (SCR), although its output is often used to trigger other devices.Applications include: An SCR trigger, Oscillator, Timing, Sawtooth Generator, Long Time delays, etc. An example is the 2N4949... (read more)Browse Unijunction Transistors (UJT) Datasheets for American Microsemiconductor, Inc. -
Linear Integrated Systems, Inc.
NPN and PNP Monolithic Dual TransistorsLS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Features: Low Offset/Tight Matching Monolithic Dual (0.5 to 3mV versions). High Gain (100 to 400 Beta versions). Tightly Matched Monolithic Dual (1-15mV versions). High Breakdown Voltage (25 to 60 Volt versions). Low Capacitance (cob=2pf). Designed for Low Offset, High Gain, Low drift amplification. Available in Surface Mount SOIC 8 lead and SOT23 6 lead packages. Also available in Tested Die, PDIP 8, TO-71 6, and TO-78 6 lead... (read more)Browse Small-Signal Bipolar Transistors (BJT) Datasheets for Linear Integrated Systems, Inc. -
American Microsemiconductor, Inc.
Bipolar Junction Transistor (BJT)Description of bipolar transistor. The transistor is primarily used as a current amplifier. When a small current signal is applied to the base terminal of a bipolar transistor, it is amplified in the collector circuit. This current amplification is referred to as hfe or beta and equals Ic/Ib. As with all semiconductors, breakdown voltage of a transistor is also a design limitation. There are breakdown voltages that must be taken into account for each combination of terminals of a transistor... (read more)Browse Power Bipolar Transistors Datasheets for American Microsemiconductor, Inc. -
TT Semiconductor, Inc.
HIgh Temperature Transistor ArraysFabricated in a dielectrically isolated, complementary bipolar process, each transistor is electrically insulated from the others by a layer of insulating oxide (and not the reverse-biased PN junctions used in conventional arrays) and exhibit inter-device crosstalk and DC isolation similar to TT Semiconductor expected from discrete transistors. The resulting low collector-to-substrate capacitance produces a typical NPN fT of 350MHz (325 MHz for the PNPs). Substrate biasing is not required... (read more)Browse Transistors Datasheets for TT Semiconductor, Inc. -
Mitsubishi Electric Power Products, Inc.
Insulated Gate Bipolar Transistors (IGBTs)Power Supply systems by Mitsubishi Electric. IGBT - Transistors with Excellent Performance Characteristics. Mitsubishi Electric is the leading manufacturer of Insulated Gate Bipolar Transistors (IGBTs), and now utilizes IGBTs in the converters and inverters of its 9700 Series UPS systems. These advanced, high-performance transistors provide a variety of intelligent features. High Ampacity Transistors (600A). High Speed Switching. Low Control Power. Design Features: IGBT(Converter/Inverter). 1:1... (read more)Browse Uninterruptible Power Supplies (UPS) Datasheets for Mitsubishi Electric Power Products, Inc. -
American Microsemiconductor, Inc.
PHOTO TRANSISTORS L14G1, L14G2, 14G3Photransistors L14G1,L14G2 and, L14G3. Has Fairchild, General Electric, QT, and Telefunken left you in the lurch for Phototransistors? Still waiting for shipment? Wait no more! Same day shipping from American Microsemiconductor. Finally , a dependable supplier of the Silicon Phototransistors. American Microsemiconductor Inc. is now supplying the L14G1, L14G2, and L14G3 narrow angle silicon phototransistor L14 family, in the TO-18 hermetic sealed package; featuring : 45 Volt breakdown, Current up... (read more)Browse Transistors Datasheets for American Microsemiconductor, Inc. -
Integra Technologies, Inc.
VDMOS Common Source RF Power TransistorsIntegra's line of VDMOS common source RF power transistor products boast unparalleled performance in the industry. They are designed for rugged operation in various broadband communication and broadcast applications. All gold refractory metal contact on silicon chips and the associated gold wire bonds offer superior reliability. Both hermetic, as well as epoxy sealed packages are available. Products come in discrete form, unmatched and/or partially matched as well as fully matched 50 ohm... (read more)Browse RF Transistors Datasheets for Integra Technologies, Inc. -
Integra Technologies, Inc.
ILD2735M120 High Power Pulsed TransistorIntegra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications. The high power pulsed transistor part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 120 watts of peak output power with 8-9dB gain typically. The ILD2735M120 will be released and available for sampling in Q4 of 2010. Maximum reliability is achieved through... (read more)Browse Transistors Datasheets for Integra Technologies, Inc. -
Integra Technologies, Inc.
ILD2731M200 High Power Pulsed TransistorIntegra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications. The high power pulsed transistor part number ILD2731M200 is designed for S-Band systems operating from 2.7 to 3.1 GHz. Operating at a pulse width of 300us with a duty factor of 10%, this device supplies a minimum of 200 watts of peak pulse power across the instantaneous operating bandwidth of 2.7-3.1 GHz. The ILD2731M200 will be released and available for sampling in Q4 of 2010. The high power... (read more)Browse Transistors Datasheets for Integra Technologies, Inc.
Conduct Research
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Nanoscale Transistors: Device Physics, Modeling and Simulation
Nanoscale Transistors: Device Physics, Modeling and Simulation. Providing a description of the recent development of theory, modeling, and simulation of nanotransistors, this text presents physical pictures and semi-analytical models, which were validated by detailed numerical simulations...
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Pencils point way to novel nanocircuits
Graphite, the material in pencils, could form the basis for a new class of nanoscale electronic devices. A proof-of-principle device made of graphene. Using thin layers of graphite called graphene, researchers at the Georgia Institute of Technology and the Centre National de la Recherche...
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MICRO: Reality Check
Meeting the Nanoscale Device Fabrication Challenge True, Integrated Design for Manufacturability Must be Implemented is chief technology officer and senior vice president, semiconductor technology research, for The Noblemen Group, a boutique investment banking, strategic advisory, and business...
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Carbon Nanotubes Outperform Copper Nanowires as Interconnects
. "Given the data we collected, we believe that carbon nanotubes at 45 nanometers will outperform copper nanowire." The research results will be featured in the March issue of Journal of Physics: Condensed Matter. Because of the nanoscale size of interconnects, they are subject to quantum phenomena...
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Wired 9.06: Atomic Rulers of the World
Atomic Rulers of the World Nanoscale optics, quantum computing - the battle for technology supremacy is being fought inside the labs of a national standards agency called NIST. And the new enemy is in the White House. Bill Phillips has taken the "close enough for government work" dodge and turned...
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MICRO: SIA backs cancer study
Atomic-layer deposition maps out its place in the nanoscale world David Back's employer required little convincing when it came time to sign on the dotted line for a major atomic-layer deposition (ALD) project. Atomic-layer deposition "is an essential part of our DRAM technology roadmap," he states...
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
anemic Mentor Graphics Chairman Wally Rhines foresees a very different recovery for the EDA industry from the latest and longest economic downturn. Zinc-oxide structure joins nanoscale-device push Nanorings, a new type of geometry in the quest to build nanoscale devices, hold out near-term promise...
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
competing PA-RISC family in 2004. Technology shapes tomorrow's digital hospital Emerging technologies ranging from wireless networks to ubiquitous nanoscale sensors promise to transform. venture capital, semiconductors, aerospace, manufacturing, computers, foundries, electronics, engineering, technology...
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Computer Power User Article - Under Development
of them on each chip. But within the next 10 years, conventional transistors will reach their physical size limit, bringing Moore s Law to a screeching halt. Although other scientists are focusing on developing new chip materials or nanoscale circuits, researchers at HP Laboratories have announced...
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
to harness them. Logic and memory shown on molecular scale Integrated circuits all depend on lockstep, unerring, nanoscale accuracy in their fabrication. Now Rice University researchers have challenged that wisdom by demonstrating that molecule-sized electronic devices can be used for both logic...
Engineering Web Search: Nanoscale Transistors
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CNS - Center for Nanoscale Systems Small optical force can budge nanoscale objects. |
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Memristor found: HP Labs proves fourth integrated circuit... for more than 50 years, the proof of its existence remained elusive - in part because memristance is much more noticeable in nanoscale devices. |
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IBM Research | Almaden Research Center | Spintronics Devices... |
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Fujitsu Develops World's First Technology for Low-Temperature... Graphene is a nano-scale carbon material (nano-carbon) with the potential to be the material used in next-generation low-voltage, low-power See Fujitsu Limited Information |
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ECE Directory: Yi Luo Design and fabrication of nanoscale molecular devices, including single-molecule single-electron transistors; |
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MOSFET - Wikipedia, the free encyclopedia terminal, making it a three-terminal device like other field-effect transistors. |
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Graphene - Wikipedia, the free encyclopedia 4.4 Graphene transistors 4.5 Graphene optical modulators |
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transistors | Applied Materials transistors May 4, 2011 may go down in history as a day that shook the chip industry to its core, literally. See Applied Materials, Inc. Information |
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Nanoscale field-effect transistors developed to probe cells |... Nanoscale field-effect transistors developed to probe cells See American Ceramic Society (The) Information |
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nanoHUB.org - Resources: Modeling Quantum Transport in... You are here: Home ? Resources ? Publications ? Modeling Quantum Transport in Nanoscale Transistors ? About |
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