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Ohmic Contact

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Part # Distributor Manufacturer Product Category Description
2980225 Allied Electronics, Inc. PHOENIX CONTACT Not Provided Relay;E-Mech;PLC;Ctrl-V 5DC;Pwr-Rtg 144 W (Ohmic Load), 42 W (Inductive Load)

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  • Effects of Ohmic Metal on Electrochemical Etching of GaAs in pHEMT Manufacturing
    Good ohmic metal contact is crucial for optimum device. performance for Heterojunction Bipolar Transistors (HBT). and pseudomorphic High Electron Mobility Transistors. (pHEMT). Erosion of Gallium Arsenide (GaAs) adjacent to. ohmic structure is a common problem and it is generally. observed
  • Collector Contact Optimization in GaAs HBT Manufacturing
    test to assess the. for the collector metal deposition, the AuGe:Ni ratio of the. functional quality of the collector in the HBT circuits. The. collector ohmic contact and the post metallization alloying. split collector measurement is composed of two collector. temperature. contacts on a sheet
  • Novel Passivation Ledge Monitor in an InGaP HBT Process
    . resulted in high resistivity ohmic contacts making. Given the importance of the HBT ledge thickness and. characterization of the InGaP layer difficult. We believe. quality, monitoring these allows for better in-line control and. using the Ti/Pt/Au stack forms a degraded version of the. wafer
  • Progress on Distributed Resistance Model for pHEMT
    numbers. different gate finger numbers (10, 13, and 20) and. of gate fingers. corresponding unit gate widths (100um, 77um and 50um). The. electrode metals are standard production alloys to form. Keywords: GaAs pHEMT; gate resistance; distributed. resistance; current crowding. Schottky and Ohmic
  • Ultra-Miniature High Linearity SPDT Switch for WLAN Applications
    , source to drain. distance, ohmic contacts' area, and so on, without much trade-off in performance. This requires innovations in the. design and fabrication of FETs and components, such as pHEMTs, MMIC resistors, and MMIC capacitors. In the. confined space of a miniature package, the bonding pads
  • Stability of Silicon Photodiodes for Laser Emission Measurements (.pdf)
    , a PIN-10D, with an active area of. A high temperature, planar diffused, P+N junction, a high tempera-. one centimeter squared and capable of detecting light from 10-12 wat s. ture N plus diffused ohmic contact, an oxide protected junction edge. to 10-2 watts is shown in Figure 3. region, a eutectic al
  • Test and Characterization of Laser Diodes: Determination of Principal Parameters
    an electric charge of q, where. Current. q = 1.6x10e­19 Coulombs. One Coulomb, denoted by C,. Injection. is an electric charge equal to the electricity transferred by. Gold Pad for Wire Bonding. a steady current of one Amp in one second. This means. Ohmic Contact Metallization. that one C/sec is one
  • Copper Interconnect on GaAs pHEMT by Evaporation Process
    electrodes,. electrical contact as well as for wire bonding. Also included. which had a Ni/Ge/Au N-type Ohmic scheme. The first two. in the experiment were two control wafers. Other than the. attempts at developing a suitable metal structure resulted in. difference in the Metal 1 stack, the control wafers

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