Products/Services for One Transistor Transmitter
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Fiber Optic Transmitters - (121 companies)Performance and Input Specifications. When selecting fiber optic transmitters, there are five main performance specifications to consider: data rate, transmitter rise time, wavelength, spectral width, and maximum optical output power. Inputs include TTL... Search by Specification | Learn More -
Bipolar RF Transistors - (61 companies)Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters... Search by Specification | Learn More -
RF Transistors - (123 companies)RF Transistors Information. RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Like other semiconductor devices, they are made of materials... Search by Specification | Learn More -
RF MOSFET Transistors - (37 companies)MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. RF MOSFET Transistors Information... Search by Specification | Learn More -
Fiber Optic Transceivers - (213 companies)Fiber optic transceivers include both a transmitter and a receiver in the same component. How to Select Fiber Optic Transceivers. Fiber optic transceivers combine a fiber optic transmitter and a fiber optic receiver in a single module... Search by Specification | Learn More -
Parity Checkers and Generators - (22 companies)Parity Checkers and Generators Information. Parity checkers are integrated circuits (ICs) used in digital systems to detect errors when streams of bits are sent from a transmitter to a receiver. Parity generators calculate the parity of data packets... Search by Specification | Learn More
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Logic Level Translators - (40 companies)...and is used to translate transistor-transistor logic (TTL) to CMOS logic. Performance Specifications. LLT performance can be described by a number of parameters. These include input and output voltages, number of channels, data rate, load capacitance... Search by Specification | Learn More
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Fiber Optic Receivers - (123 companies)...by a fiber optic transmitter (or transceiver) and travels along single-mode or multi-mode optical cable, depending on device capabilities. A data demodulator converts the light signal back into its original electrical form. In more complex fiber optic... Search by Specification | Learn More
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RS-232, RS-422, and RS-485 Interfaces - (36 companies)...include complementary metal-oxide semiconductor (CMOS), transistor-transistor logic (TTL) and low voltage differential signaling (LVDS). CMOS uses a combination of p-type and n-type metal-oxide-semiconductor field effect transistors (MOSFET). TTL... Search by Specification | Learn More
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RF Diodes - (43 companies)RF Diodes Information. RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices. There are many different types of products. PN junction... Search by Specification | Learn More
Product News for One Transistor Transmitter
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Avago Technologies
Automotive 1MBd Transistor Output Optocoupler The ACPL-M43T is a single channel, high temperature, high CMR, high-speed digital automotive optocoupler in a five lead miniature footprint. The SO-5 JEDEC registered (MO-155) package outline does not require “through holes ” in a PCB. This package occupies approximately one-fourth the footprint area of the standard dual-in-line package. The lead profile is designed to be compatible with standard surface mount processes. The ACPL-M43T has enhanced features to meet automotive... (read more)Browse Optocouplers Datasheets for Avago Technologies -
American Microsemiconductor, Inc.
Bipolar Junction Transistor (BJT) Description of bipolar transistor. The transistor is primarily used as a current amplifier. When a small current signal is applied to the base terminal of a bipolar transistor, it is amplified in the collector circuit. This current amplification is referred to as hfe or beta and equals Ic/Ib. As with all semiconductors, breakdown voltage of a transistor is also a design limitation. There are breakdown voltages that must be taken into account for each combination of terminals of a transistor... (read more)Browse Power Bipolar Transistors Datasheets for American Microsemiconductor, Inc. -
American Microsemiconductor, Inc.
Junction Field Effect Transistor J-FET from AMS collector, and base of a bipolar transistor. The terms n- channel and p-channel refer to the output polarity to which the output (across the drain and source) are connected. American Microsemiconductor Inc is one of the last suppliers of JFETS and has the widest range of JFETS available. Basic Parametric Specifications of J-FET are : Gate source breakdown voltage (BVgss) of J-FET. Gate reverse leakage current (Igss) in J-FET. Gate source cutoff voltage (Vgs(off)) of J-FET. Drain current in J-FET at zero... (read more)Browse Junction Field-Effect Transistors (JFET) Datasheets for American Microsemiconductor, Inc. -
Integra Technologies, Inc.
VHF-Band Pulsed Power Transistor The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth... (read more)Browse Transistors Datasheets for Integra Technologies, Inc. -
Integra Technologies, Inc.
ILD0506EL350 High Power Pulsed Transistor Integra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications. The high power pulsed transistor part number ILD0506EL350 is designed for P-Band systems operating from 480 MHz to 610 MHz. Operating at a pulse width of 15ms with a duty factor of 33%, this push-pull MOSFET device supplies a minimum of 350 watts of peak pulse power across the instantaneous operating bandwidth of 480-610 MHz. Maximum reliability is achieved through all-gold metal contacts... (read more)Browse Transistors Datasheets for Integra Technologies, Inc. -
Integra Technologies, Inc.
ILD2735M120 High Power Pulsed Transistor Integra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications. The high power pulsed transistor part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 120 watts of peak output power with 8-9dB gain typically. The ILD2735M120 will be released and available for sampling in Q4 of 2010. Maximum reliability is achieved through... (read more)Browse Transistors Datasheets for Integra Technologies, Inc. -
Integra Technologies, Inc.
ILD2731M200 High Power Pulsed Transistor Integra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications. The high power pulsed transistor part number ILD2731M200 is designed for S-Band systems operating from 2.7 to 3.1 GHz. Operating at a pulse width of 300us with a duty factor of 10%, this device supplies a minimum of 200 watts of peak pulse power across the instantaneous operating bandwidth of 2.7-3.1 GHz. The ILD2731M200 will be released and available for sampling in Q4 of 2010. The high power... (read more)Browse Transistors Datasheets for Integra Technologies, Inc. -
TriQuint Semiconductor, Inc.
High Gain 30W GaN RF Power Transistor T1G6003028-FL. 30W, 28V, DC-6GHz GaN RF Power Transistor. The TriQuint T1G6003028-FL is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint's proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. (read more)Browse RF Transistors Datasheets for TriQuint Semiconductor, Inc. -
American Microsemiconductor, Inc.
2 MHZ - 30 MHZ Power Transistor 2SC2879 RF Power Transistor 2 MHZ to 30 MHZ from AMERICAN MICROSEMICONDUCTOR: 2SC2879 Silicon NPN Power Transistor, ROHS compliant, Low Power Supply operation, 12.5 Volts. Direct replacement for Toshiba part number 2SC2879 and other 2SC2879 manufacturer's parts. Off the shelf, special testing and Mil qualification available. Features: Low Power Supply use = 12.5 Volts. Po =100 Watt PEP. Gp =15.2 Typical at 100 Watts a8 28 MHZ. IMD3 =-24 dB Max at 100 Watts(PEP). Package: High Reliability SOT-121 Var... (read more)Browse Bipolar RF Transistors Datasheets for American Microsemiconductor, Inc. -
American Microsemiconductor, Inc.
15 Watt 200-600MHZ Microwave Power Transistor This microwave bipolar NPN silicon power transistor by American Microsemiconductor Inc, MRF5176, is designed for wideband large-signal driver and predriver amplifier stages. It features 15 Watts output and a 200-600 MHZ frequency range. The output Power is 15 Watts at 28 Volts, Vcc. Minimum Gain is 10 dB also at 28 Volts with an efficiency of 50%. Adding to our microwave line, the MRF5176 is available from AMS in the original helicopter style RF package (SOT-120 var). The MRF5176 was originally... (read more)Browse RF Transistors Datasheets for American Microsemiconductor, Inc.
Parts by Number for One Transistor Transmitter
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| Liquipoint T FTW 31/32 | Endress+Hauser, Inc. | Liquid Level Sensors | Point level switch for multiple point detection in conductive liquids. Your benefits. Detect up to five level limits with one probe. Two-point control and additional maximum and minimum detection. Flexible instrumentation: - with built-in electronic insert, either transistor or relay output for 2... | |
| T80RX-MQ-06*B | TELE RADIO AMERICA LLC | Industrial Remote Controls | one transistor output for an external horn and a large number of programmable functions. For example, you can program relay configurations for cranes and monorails. One of the receivers has a 10-pin connector that makes it easy to install and is particularly suitable if you want to install... |
Conduct Research
The infrared spectrum provides less ambient noise than other spectrums of light, like visible PHILIPS RC5 PROTOCOL light, and this makes infrared ideal for inexpensive reliable communication. The RC5 protocol is a common IR transmission proto- To create an IR control link, one needs a transmitter...
...with automatic gain. battery charge lifetime. compensation, is introduced. The relevance of the automated. The PAE of RF PAs operating at high transmitted power levels. feature for multistate RF transistor switching in one or multiple. are significantly improved with design techniques that shape. PA lineups...
- tro-mechanical designs. When switched into the trans-. is given in Table 1. na to the transmitter (exciter). The basics circuit for one mit state, each diode becomes. It is important to note that the in the transmit state and to electronic T-R switch consists. Skyworks, Con't on pg 38. PAGE 38 · JUNE 2009...
transmitter. Preamp. Temperature Display. Temp. TC9400. Gate. Probe. V/F. Latch. Gate. Latch. Reset. Reset. 50/60Hz. One. One. Shot. Shot. Temperature. Preamp. Preamp. Preamp. Probes. A. Thermocouple. B. Thermistor. C. Transistor. Junction. FIGURE 5: Temperature meter. A/D CONVERSION...
The software can be used to implement a stand-alone decoder or can be integrated into a security system. The maximum operating range of this particular application circuit is 25 millimeters (one inch). HCS410, PIC16C56. HCS410 Transponder Decoder Using a PIC16C56. M. AN675. HCS410 Transponder...
...me on an inescapable one-way trip to the. unemployment office, so I sought career advice from some more experienced. colleagues. The very small majority of those whom I consulted advised me to make the. shift into RF discrete diode applications engineering, the most prescient of whom told. me...
...such as, Lithium-Ion (Li-Ion). Both options result in battery size reduction at the expense of lower battery energy capacity and/or lower terminal voltage. Reduced battery terminal voltage is one factor hastening the departure from 5V to 3V (and lower) system supplies. Circuit Devices for Applications...
...such as, Lithium-Ion (Li-Ion). Both options result in battery size reduction at the expense of lower battery energy capacity and/or lower terminal voltage. Reduced battery terminal voltage is one factor hastening the departure from 5V to 3V (and lower) system supplies. Circuit Devices for Applications...
...unusual to anyone who already. Radio Frequency Identification (RFID) systems use. understands RF or microwave systems. There is only. radio frequency to identify, locate and track people,. one transmitter the passive tag is not a transmitter or. assets, and animals. Passive RFID systems...
...high electron mobility transistor (pHEMT). technology is ideal for switching applications. Compared to the traditional metal semiconductor field effect transistor. (MESFET) technology, pHEMT devices have a lower channel resistance (Ron) at the similar threshold voltage (Vth). and hence yield a lower...
Engineering Web Search: One Transistor Transmitter
Fujitsu Laboratories Develops CMOS Transmitter IC for 40Gbps...
Fujitsu Laboratories Develops CMOS Transmitter IC for 40Gbps Optical Transmission Systems
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SMS Documentation : Fujitsu Canada
with process miniaturization, the leak current emitted while the transistor is OFF has been increasing and has now reached a level where it can no
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Radio - Wikipedia, the free encyclopedia
Information such as sound is transformed into an electronic signal which is applied to a transmitter.
Amplifier - Wikipedia, the free encyclopedia
2.3 Transistor amplifiers 2.4 Operational amplifiers (op-amps)
MAX3222/32/37/41 DS
See Newark Information
Chapter 4: Radio -- Build a very simple AM radio transmitter
A simple AM transmitter The Three-Penny Radio
Chapter 9: High-Speed Differential I/O Interfaces with DPA in...
Transmitter Block Diagram Serializer 10 Internal TX_OUT Logic diffioclk Fast PLL load_en Each Arria GX transmitter data channel can be configured to
See Altera Corporation Information
Xilinx WP298 Power Consumption at 40 and 45 nm, White Paper
the previous node's transistor size to the new node's transistor size (see Equation 2). Previous Node Transistor Size 2 Transistor density scale
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PIC12C5XX, 8-Pin, 8-Bit CMOS Microcontrollers
To determine if an errata sheet exists for a particular device, please check with one of the following: ??? Microchip???s Worldwide Web site;
See Digi-Key Corporation Profile & Catalog
PIC18F2455/2550/4455/4550 Data Sheet
??? Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended
See Digi-Key Corporation Profile & Catalog
