Products/Services for P-type Metal Oxide Semiconductor
Metal Powders (Powdered Metals) - (224 companies)
Metal-Oxide Semiconductor FET (MOSFET) - (193 companies)
Semiconductor Foundry Services - (193 companies)
Semiconductor Cluster Tools - (73 companies)
Semiconducting Materials - (253 companies)...a partially-filled valence shell and overlapping band gap, which results in free-traveling electrons and high electrical conductivity. The first semiconductors and semiconductor materials produced electrical conduction through contact with a metal wire. Subsequent... Learn More
Small-Signal Bipolar Transistors (BJT) - (87 companies)
RF MOSFET Transistors - (40 companies)
Junction Field-Effect Transistors (JFET) - (72 companies)
Logic Level Translators - (44 companies)
IC Analog Switches - (106 companies)
Product News for P-type Metal Oxide Semiconductor
Precision ceramic gears in semiconductor process Contamination problems solved with precision ceramic gearing. Problem: A semiconductor processor was having contamination problems from metal and plastic gears due to intense chemical, thermal and high vacuum conditions. They were considering technical ceramics for chemical resistance, however precision pinion gear teeth must be not only uniform, but strong enough to survive load. Solution: Based on fine features and point stresses in application of a precision ceramic gear Insaco recommended... (read more)Browse Oxide Ceramics Datasheets for Insaco, Inc.
Precision Resistive Products, Inc.
MOF/MOS Series, Leaded Metal Oxide Resistors MOF/MOS Series, leaded Metal Oxide Film Flame Retardant. Metal Oxide Film, 1/4w,1/2w,1w,2w,3w,4w,5w, 6w,7w,10w. Features: 1/2 Watt Thru 10 Watt. Excellent Stability. Solvent Resistant Coatings. Low Noise. Small Size. Flame Retardant. Tolerance ±1% & ±5% @ 25°C. Temperature Coefficient ±200 & ±350 PPM/°C (read more)Browse Resistors Datasheets for Precision Resistive Products, Inc.
Mouser Electronics, Inc.
EPCOS SIOV Metal Oxide Varistors from MOUSER EPCOS SIOV Metal Oxide Varistors feature a wide operating voltage range of 11 to 1100 VRMS, high surge current ratings up to 8 kA, and no derating up to 85 °C ambient temperature. SIOV Metal Oxide Varistors meet new UL 1449 3rd Edition requirements. Applications include lighting, radio and TV equipment, and household appliances. Features: Wide operating voltage range 130 to 420 VRMS. Self-protected under abnormal overvoltage conditions. High-energy AdvanceD series E2. Applications: Air... (read more)
Freudenberg-NOK Sealing Technologies
Simriz® 508 for Semiconductor Applications SACVD. Plasma etch: oxide and metal. Ashing. Metalization: PVD, evaporation, sputtering. Ion Implant. RTP. Oxidation. Diffusion. Lamp Anneal. Equipment Locations. Chamber Lid Seals. Bell Jar Seals. Endpoint Windows. Gas Inlet Seals. Isolator Valve Seals. KF Fittings. Slit Valve Seals. Valve Seals. Window Seals. Typical Physical Properties. Color: White. Hardness, Shore A: 75. Tensile Strength, psi (MPa): 2277 (15.7). Elongation: 246%. Modulus at 100% Elongation, psi (MPa): 711 (4.9... (read more)
Metals Metals. STAMPING. DIE CASTING. CNC – MACHINING & LATHE. EXTRUSION • MIM. WIRE FORMING. PHOTO ETCHING . Materials. Aluminum. Stainless Steel. Zinc. Copper. Titanium. Nickel and more. Finish. Powder Coating. Anodizing. Plating. Painting. Polishing and more. We would like to earn your business. Please send quote requests to: Quotes@Tanfel.com (read more)Browse Stamping Services Datasheets for Tanfel
Dow Corning - Molykote®
Molykote® P-74 Metal-Free Anti-Seize Paste Molykote ® P-74 Metal-Free Anti-Seize is suitable for assembly and fitting of a wide variety of threaded connections, such as bolted connections, sliding contact bearings, linear sliding guides, splined shafts, press-fit joints, exhaust bolts, spark plug threads, flanges and flange seals, door hinges and brake mechanisms. Features: High load-carrying capacity. Good corrosion protection. Non-metallic formulation. Wide service temperature range. Low and constant coefficient of friction. Get... (read more)Browse Anti-seize Compounds Datasheets for Dow Corning - Molykote®
Aerospace Defense Coatings Of Georgia
Black Oxide Plating Services This procedure creates a black finish on the ferrous metal base material by immersing it in hot oxidizing salts or salt solutions. Black Finish. Protective Coating. Maintains original component dimensions without build up. Finished coating will retain an oil film. Process Approvals: For Black Oxide Plating we adhere to: MIL-DTL-13924: Coating, Oxide, Black, For Ferrous Metals (read more)Browse Plating Services Datasheets for Aerospace Defense Coatings Of Georgia
Precision Ferrites and Ceramics, Inc. (PFC)
Aluminum Oxide and Alumina Ceramics Precision fabrication of advanced ceramic components. All shapes of oxide and non-oxide ceramic materials, prototype to full production with fast turnaround. Mechanical Supports. High Voltage. Thermal Insulation. Thermal Shock Resistance. High Temperature. Tolerances: ±.XXXXXX of Inch. Harsh Environments. Hiigh Thermal Conductivity. Wear Resistance. Up To 28" Diameter. Corrosion Resistance (read more)
Advanced Abrasives Corp.
Premasol Cerium Oxide Slurries Cerium Oxide Slurries are designed for polishing high precision optical mirrors, lenses and optical windows with a wide range of hardness. It has also been used for the critical finishing of crystals and substrates. Cerium Oxide Slurries are compatible with soft and hard laps, including: pads, metals and composites; and can be used successfully with Gugolz Pitch and other synthetic lapping pitches. For use with: glass, fused quartz, single crystal quartz, zinc selenide, silicon, fluorides... (read more)Browse Abrasive Compounds and Abrasive Slurries Datasheets for Advanced Abrasives Corp.
Precision Ferrites and Ceramics, Inc. (PFC)
Zirconium Oxide and Zirconia Ceramics PFC is a leading fabricator in various types of Semiconductor industry components: • Optical Molds. • Gas Distribution Plates. • Edge Rings. • Heaters • Plasma Etch Components. • Vacuum Arms. • Lithography. In most cases, the product is an extremely intricate component produced by using a combination of advanced forming, precision machining, and available grinding equipment. Contact PFC for your custom applications. (read more)
Parts by Number for P-type Metal Oxide Semiconductor
|Part #||Distributor||Manufacturer||Product Category||Description|
|V150ZA20P||ASAP Semiconductor||LITTELFUSE||Not Provided||VARISTOR, RADIAL, 150V; Series:ZA; Varistor Type:Metal Oxide Var|
|V150ZA1P||ASAP Semiconductor||LITTELFUSE||Not Provided||VARISTOR, RADIAL, 150V; Series:ZA; Varistor Type:Metal Oxide Var|
|V33ZA05P||ASAP Semiconductor||LITTELFUSE||Not Provided||METAL OXIDE VARISTOR 20VAC; Series:ZA; Varistor Type:Metal Oxide|
|V100ZA4P||ASAP Semiconductor||LITTELFUSE||Not Provided||METAL OXIDE VARISTOR 60VAC; Series:ZA; Varistor Type:Metal Oxide|
|V180ZA1P||ASAP Semiconductor||LITTELFUSE||Not Provided||VARISTOR, 10.0J, 115VAC; Series:ZA; Varistor Type:Metal Oxide Va|
Standard complementary metal-oxide semiconductor (CMOS) logic uses a combination of p-type and n-type metal-oxide-semiconductor field effect transistors (MOSFET) to implement logic gates and other digital circuits found in computers, telecommunications, and signal processing equipment. Standard...
...outline of the package may suggest. The. semiconductor junctions (P-N junctions) at the boundaries of. increased active surface area results in proportionally higher. the zinc oxide grains. A MOV is a multi-junction device with. peak energy capability. millions of grains acting as a series parallel...
...circuit components. The varistor is composed primarily of zinc oxide with small additions of bismuth, cobalt, manganese and other metal oxides. The structure of the body consists of a matrix of conductive zinc oxide grains separated by grain boundaries providing P-N junction semiconductor...
AC: The optimum protection is to. metal oxides. The structure of the body consists of a matrix of. connect evenly rated MOVs from hot-neutral, hot-. conductive zinc oxide grains separated by grain boundaries. ground and neutral-ground. If this conﬁguration is not. which provide P-N junction...
There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the "Metal-Oxide Semiconductor" Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric...
Venuka K. Jayatilaka and Phillip B. Espinasse, PolarFab Power management applications are relying increasingly on highly integrated bipolar-CMOS-DMOS (BCD) processes, combining bipolar and logic components with large metal-oxide-semiconductor (MOS) drivers on the same chip. As processes become more...
...chemical state. of the atoms in the solid than they are to be macroscopic defects like thinning or metal. contamination. This makes detecting an initial low leakage current an insufficient way to. gauge the reliability of the semiconductor device. The aging of the oxide must be studied. Again, this aging...
...sophisticated complementary metal-oxide semiconductor (CMOS) process technologies. Keeping power losses to an absolute minimum is the primary goal of any designer who is building a battery- powered ASIC, particularly one to be incorporated in an implanted medical device. Power is the product of the IC...
They are also comfortable with the MOSFET (metal-oxide. semiconductor field-effect transistor) as a discrete device for amplifying analog signals. and switching power signals, as well as its role as the key digital structural element in. large-scale ICs. But alongside these devices is the JFET (junction...
...sealed against the possible penetration of air. molecules, as well as any “tag-along” airborne contaminants. Gas-Tight Connections. Metal-to-metal gas-tight connections are those where oxides or. other surface contaminants are absent or removed, if neces-. sary, by mechanical or chemical means...
Engineering Web Search: P-type Metal Oxide Semiconductor
Semiconductor - Wikipedia, the free encyclopedia
When a doped semiconductor contains excess holes it is called "p-type", and when it contains excess free electrons it is known as "n-type". The
MOSFET - Wikipedia, the free encyclopedia
Metal?oxide?semiconductor structure on p-type silicon
p-type semiconductor - definition of p-type semiconductor in...
semiconductor The electric field "swept" the oxygen vacancies towards the film's top surface, creating an n-type
Pierret Chapter 16 - MOS Fundamentals Jeff Davis ECE3040...
15 MOS Capacitor Capacitor under bias for P-type material ACCUMULATION DEPLETION INVERSION 16 MOS Capacitor Capacitor under bias Summary Inversion
APPLIED PHYSICS LETTERS VOLUME 79, NUMBER 25 17 DECEMBER 2001...
2001 Hole mobility enhancements in strained Si?Si1?yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1?xGex ,,x?y...
An n-channel MOS transistor is fabricated on a p-type Si substrate.
Platinum silicided p-type Schottky barrier...
Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm
Tutorial | Sigma-Aldrich
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