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Supplier: OSI Optoelectronics
Description: within the field of view. These detectors can also be used inh applications where wide wavelength range of detection is needed. OSI Optoelectronics offers three types of dual sandwich detectors. The Silicon-Silicon sandwich, in which one silicon photodiode is placed on top of the other
- PN, PIN, or Avalanche: PIN Photodiode
- Spectral Response: Visible, IR
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
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Supplier: Advanced Photonix, Inc.®
Description: Certain applications require multiple detectors either in-line, or in a quad arrangement. Silonex provides standard and custom photodiode arrays, typically constructed of a photodetector chip mounted on a ceramic substrate encapsulated in epoxy, in a diversity of package configurations
- Spectral Response: Visible, IR
- Array: Yes
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Supplier: Silonex, Inc.
Description: Certain applications require multiple detectors either in-line, or in a quad arrangement. Silonex provides standard and custom photodiode arrays, typically constructed of a photodetector chip mounted on a ceramic substrate encapsulated in epoxy, in a diversity of package configurations
- Spectral Response: IR
- Array: Yes
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Supplier: Opto Diode Corporation, an ITW Company
Description: Opto Diode offers high quality standard and custom photodiodes. We have a large variety of standard devices featuring low dark current and low capacitance. For responsivity between 400 -1100 nm, Opto Diode has the perfect photodiode for your application. For more information about custom silicon
- Spectral Response: Visible
- Photodiode Package / Mounting: Leaded
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Supplier: California Eastern Laboratories - CEL
Description: 30µm diameter InGaAs photodiode with TEC for OTDR applications
- PN, PIN, or Avalanche: Avalanche Photodiode
- Spectral Response: IR
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
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Description: VERSIONS MicroSIZE PACKAGE: MSOP-8 APPLICATIONS PHOTODIODE MONITORING PRECISION I/V CONVERSION OPTICAL AMPLIFIERS CAT-SCANNER FRONT-END
- Package Type: SOIC, MSOP
- RoHS Compliant: Yes
- On-Chip ESD Protection: Yes
- Single Supply: Yes
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Supplier: First Sensor AG
Description: These avalanche photodiodes are suitable for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources. Features: High quantum yield at 1064 nm High sensitivity Low noise High speed Optimized for longer wavelengths
- PN, PIN, or Avalanche: Avalanche Photodiode
- Spectral Response: IR
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
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Supplier: Thorlabs, Inc.
Description: , and monitoring applications. The FDSP series housing is a stainless steel bushing used for active coupling of the fiber to the photodiode. The fiber is reinforced with a 900 m loose tube outer jacket and a rubber boot, which relieves fiber bending stresses. Two models with single mode fiber and one
- PN, PIN, or Avalanche: PIN Photodiode
- Spectral Response: Visible
- Photodiode Material: Silicon
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Featured Products for Photodiode Application Top
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Excelitas Technologies Corp.
X-Ray Photodiode Array
These photodiode arrays are used to generate an X-ray image by scanning an object line by line. The X-rays are converted into light through the attached scintillator crystal. The light intensity is then measured by the photodiodes. The boards are employing chip-on-board technology with optically adapted scintillator crystals. The listed designs can be ordered as a standard part, but can also be customized to meet the needs of a wide variety of applications. Excelitas custom photodiode arrays... (read more)
Browse Photodiodes Datasheets for Excelitas Technologies Corp. -
OSI Optoelectronics
Back Illuminated Photodiode Arrays
FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They come standard in a single element diode or 4 - or 8- elements array with active area of 300µm. These back illuminated InGaAs photodiode/arrays are designed to be flip chip mounted (active area facing up), or assembled face down minimizing the overall dimensions. These low inductance, low dark current, and low capacitance back illuminated photodiode /arrays come with ot without ceramic substrates. FEATURES... (read more)
Browse Photodiodes Datasheets for OSI Optoelectronics -
OSI Optoelectronics
PhotopsTM, Photodiode-Amplifier Hybrids
The Photop ™ Series, combines a photodiode with an operational amplifier in the same package. Photop general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100 nm. They have an integrated package ensuring low noise output under a variety of operating conditions. These op-amps are specifically selected by OSI Optoelectronics engineers for compatibility to our photodiodes. Among many of these specific parameters are low noise. Low drift and capability... (read more)
Browse Photodiodes Datasheets for OSI Optoelectronics -
Excelitas Technologies Corp.
Avalanche Photodiode C30737CH Series
Features & Benefits: "Side-looking" LLC package - SMT-compatible. High gain at low bias voltage. Large bandwidth. Fast response, TR ~ 300ps. Low noise. RoHS-compliant. Applications: Laser meters for 635 nm or 650 nm. 905 nm range-finding devices. Speed guns. Area scanners for safety, surveillance and automatic door openers. Optical communication. 3D laser scanning. Gesture recognition (read more)
Browse Photodiodes Datasheets for Excelitas Technologies Corp. -
OSI Optoelectronics
Planar Diffused UV-Enhanced Photodiode
OSI optoelectronics introduces new family of Planar Diffused UV-Enhanced Photodiode: the UV –D/EQ and UV –D/EQC Series. The new Silicon is processed for enhanced responsivity over 200-400nm and sensitivity down to 190nm. The D/EK series offer hermetic package alternative at a lower cost and is sensitive down to 320nm.". These detectors can be reverse biased for lower capacitance, faster response, and wider dynamic range applications. They are ideal for UV Spectrophotometer... (read more)
Browse Photodiodes Datasheets for OSI Optoelectronics -
OSI Optoelectronics
800 nm Silicon Avalanche Photodiode Series
photometry applications. Storage temperature for the new devices is from minus 55 degrees to 125 degrees C, with an operating temperature range from minus 40 degrees C to 100 degrees C, maximum. For more information about OSI ’s new silicon avalanche photodiode Series 8-150 series, please visit: www.osioptoelectronics.com/standard-products/new-products.aspx . . OSI Optoelectronics, Inc. (Hawthorne, California - www.osioptoelectronics.com), ... (read more)
Browse Photodiodes Datasheets for OSI Optoelectronics -
OSI Optoelectronics
Large Area Photodiodes
FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm and 3mm, are part of OSI Optoelectronics' large active area IR sensitive detectors which exhibit excellent responsivity from 1100nm to 1620nm, allowing high sensitivity to weak signals. These large active area devices are ideal for use in infrared instrumentation and monitoring applications. The photodiode chip are isolated in TO-46 or TO-5 packages with a broadband double sided AR coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs... (read more)
Browse Photodiodes Datasheets for OSI Optoelectronics -
OSI Optoelectronics
High Speed Silicon Photodiode Preamp Hybrids
and Fibre Channel applications up to 1.25Gbps over multi-mode fiber. The photodetector converts the light into an electrical signal while the output voltage increases with light inout. This is acheived by a single +3.3V to +5V positive power supply. These devices are available in 4 pin TO-46 metal packages with either a double sided AR coated window cap or an integrated lens cap. The 250µm diameter sensing area eases fiber alignment for connectorixation or receptacle attachment. Furthermore... (read more)
Browse Photodiodes Datasheets for OSI Optoelectronics
Conduct Research Top
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Photodiode Characteristics and Applications (.pdf)
sensors, beam alignment, surface characterization, laser range finders, optical communications, and medical imaging instruments. Catalog_2006.indd Photodiode Characteristics and Applications. Photodiode Characteristics. Silicon photodiodes are semiconductor devices responsive to high-. n
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Amplifying High-Impedence Sensors ? Photodiode Example
AN951 Amplifying High-Impedance Sensors - Photodiode Example and C reduce the output noise. The output noiseR N N Author: Kumen Blake and Steven Bible is also kept low by not over-compensating the feedback Microchip Technology Inc. loop. INTRODUCTION C F Embedded systems contain many types
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Technical Reference: How Does a Photodiode and Phototransistor Work?
of an FET?. How does a photodiode and phototransistor work?. How does an LED work?. Are a diode and a rectifier the same?. In general, yes, however the diode is usually thought of as a signal device, with currents of 1 Amp or less; and a rectifier, a power device with currents up to 1,000 amps or more. Also
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Stability and Quantum Efficiency Performance of Silicon Photodiode Detectors in the Far Ultraviolet (.pdf)
Recent improvements in silicon photodiode fabrication technology have resulted in the production of photodiodes which are stable after prolonged exposure to short wavelength radiation and which have efficiencies in the far ultraviolet close to those predicted using a value of 3.63 eV
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Real Time Biomechanical Position Sensing Based on a Lateral Effect Photodiode (.pdf)
itself to a clinically usable system. ./954fbbc3-aa37-4c02-bb99-7d9c0870e0f3 Application Note No. 15. April 1982. real time biomechanical. Position Sensing Based on a Lateral Effect Photodiode. Optoelectronics +1 310-978-0516 | www.osioptoelectronics.com. An OSI Systems Company
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Organic semiconductor devices for micro-optical applications
emission of an organic semiconductor material into a single-mode polymethylmethacrylate (PMMA). waveguide. Keywords: OLED, organic photodiode, micro-optics, waveguide, optical interconnect, lab-on-a-chip, PMMA. 1. INTRODUCTION. Optoelectronic components based on organic semiconductors are opening new
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Neutron Hardness of Photodiodes For Use in Passice Rubidium Frequency Standards (.pdf)
. ./0a57ba4d-0ef6-4de5-9a9b-43ce67a843ab Application Note No. 18. neutron Hardness of Photodiodes for use in. Passive Rubidium Frequency Standards. No. 18. HARDNESS OF PHOTODIODES FOR USE IN. PASSIVE RUBIDIUM FREQUENCY STANDARDS. SUMMARY. photodiode produced by neutron irradiation. This is the topic ad-. dressed in this paper
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Using a Digital Potentiometer to Optimize a Precision Single Supply Photo Detect
. A photodiode can be operated in the Photovoltaic or. Photoconductive mode, as shown in Figure 2. INTRODUCTION. Light. Source. Photodiodes bridge the gap between light and. Light. electronics. Many times, precision applications (such. Source. as CT scanners, blood analyzers, smoke detectors,. position
Engineering Web Search: Photodiode Application Top
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Vishay - manufacturer of discrete semiconductors and passive...
Your Photodiode + VSOPx IC Get Vishay's legendary narrow filters, AGC and noise suppression Use your photodiode(s) VSOP+your PD VSOP38x VSOP58x
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National Semiconductor | High-performance Analog
Application Note 1244 Photo-Diode Current-to-Voltage Converters Application Note 1244 Photo-Diode Current-to-Voltage Converters
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Active IR Washroom Designs Using the Z8 Encore! F0830 MCU...
? F0830 MCU AN026901-0108 Abstract This application note describes a Z8 Encore!?- Developing the Application based active infrared washroom appliance
- Advanced Photonix, manufacturer of silicon photodiodes, custom...
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USB - USB Peripheral - TUSB3410 - TI.com
Single-chip solutions for directly digitizing low-level currents from photodiode arrays in CT scanners
