-
Supplier: Maxim Integrated
Description: The MAX6642 precise, two-channel digital temperature sensor accurately measures the temperature of its own die and a remote PN junction and reports the temperature data over a 2-wire serial interface. The remote PN junction is typically a
- Operating Temperature: -40 to 125 C
- Sensor Type: Temperature Sensor
-
Supplier: Maxim Integrated
Description: The MAX6680/MAX6681 are precise, two-channel digital thermometers. Each accurately measures the temperature of its own die and one remote PN junction and reports the temperature on a 2-wire serial interface. The remote junction can be a diode-connected
- Operating Temperature: -55 to 125 C
- Sensor Type: Temperature Sensor
-
Supplier: Maxim Integrated
Description: The MAX6657/MAX6658/MAX6 659 are precise, two-channel digital temperature sensors. Each accurately measures the temperature of its own die and one remote PN junction, and reports the temperature in digital form on a 2-wire serial interface. The remote
- Operating Temperature: -55 to 125 C
- Sensor Type: Temperature Sensor
-
-
Supplier: Maxim Integrated
Description: The MAX6690 is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted 2N3904 NPN type or 2N3906 PNP type—that replaces
- Operating Temperature: -55 to 125 C
- Sensor Type: Temperature Sensor
-
Supplier: Infineon Technologies AG
Description: CoolSiC™ Schottky diode 1200 V, 20 A generation 5 in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode
- Diode Applications: Power Diode
- Diode Type: Schottky Barrier Diodes
- IF: 20000 mA
- IR: 0.0085 mA
-
Supplier: Infineon Technologies AG
Description: combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point. Summary of Features Best-in-class forward voltage (VF)
- Diode Applications: Power Diode
- Diode Type: Schottky Barrier Diodes
- IF: 5000 mA
- IR: 0.0025 mA
-
Supplier: Microchip Technology, Inc.
Description: The MIC281 is a digital thermal sensor capable of measuring the temperature of a remote PN junction. It is optimized for applications favoring low cost and small size. The remote junction may be an inexpensive commodity transistor, e.g., 2N3906, or an embedded
Find Suppliers by Category Top
Featured Products Top
-
protect against their occurrence. The crystalline structure of MOVs consists of randomly oriented metal oxide grains, which are conductors separated by a resistive intergranular boundary. These boundaries exhibit P-N junction semiconductor characteristics. In a circuit operating (read more)
Browse Metal Oxide Varistors (MOVs) Datasheets for MDE Semiconductor, Inc. -
diodes respond faster than many other classes of transient suppression devices and are available in a variety of surface mounting packages. TVS diodes have p-n junctions with larger cross-sectional areas than are found in regular diodes. During normal operation, a TVS diode is invisible to (read more)
Browse Metal Oxide Varistors (MOVs) Datasheets for MDE Semiconductor, Inc. -
Power TVS Diode. Back in 2011, Boeing tested out a redesign of shipboard networks that would replace mile of point-to-point cabling, signal converters, junction boxes, and switchboards that make up a conventional ship’s cabling. The new network is called the Gigabit Ethernet Data (read more)
Browse Transient Voltage Suppressor Diodes (TVS) Datasheets for MDE Semiconductor, Inc. -
.5 degrees beam divergence parallel to the junction, 14 degrees beam divergence perpendicular to the junction, laser diode reverse voltage of 2V and operating temperature of -10 to +60 degrees C. Typical applications include biomedical instrumentation, optical light source for (read more)
Browse Diode Lasers Datasheets for World Star Tech -
operate safely. The breakdown voltage of a TVS diode depends on its doping concentration, its cross-sectional junction area, and temperature of the p-n junction. A large junction area can absorb high transient currents. What Causes Transient Voltage Suppressor Diode (read more)
Browse Transient Voltage Suppressor Diodes (TVS) Datasheets for MDE Semiconductor, Inc. -
-package. With a wide temperature range from -55°C to +175°C, the device released today is suitable for high reliability automotive applications, including secondary protection for sensor units, distributed airbag modules, and low power DC/DC converters in power distribution (read more)
Browse Rectifiers Datasheets for New Yorker Electronics Co., Inc. -
C MOSFET, is lower, particularly, at low loads, than the pn junction resistance of a saturated IGBT. Thus the conduction loss of an SIC MOSFET is lower than the IGBT’s conduction loss. The switching loss difference, as shown on the right side of Figure 1, is much more significant. The Si IGBT has a (read more)
Browse Power Supplies Datasheets for EA Elektro-Automatik Inc. -
been lumped together in the summary to improve readability if their purposes are closely related. Temperature and Altitude (Section 4.0) These tests check for the effects of altitude and cabin pressure changes on the performance of aircraft systems. There are multiple (read more)
Browse Metal Oxide Varistors (MOVs) Datasheets for MDE Semiconductor, Inc.
More Information Top
-
Thermistor-like pn diode temperature-sensor and a new method to measure the absolute humidity using these temperature-sensors combined with a microheater
Abstract We have developed a new type temperature-sensor of pn junction diode and a microheater combined with this temperature-sensoc This pn junction diode temperature sensor can cover very wide temperature-range of about -200 "Cto 500 "C with very high…
-
SOI diode uncooled infrared focal plane arrays
Since the fluctuation in the band-gap energy of silicon is extremely small, the pn - junction diode temperature sensors are expected to be insensitive to process fluctuations even if relatively loose process management is employed.
-
640 x 480 pixel uncooled infrared FPA with SOI diode detectors
Since the SOI diode architecture utilizes single crystal PN junction diodes as temperature sensors , the uniformity is intrinsically excellent.
-
Wafer Level 3-D ICs Process Technology
The effects of self-heating on transistors in a 3D circuit stack were compared by measuring the actual temperature of each tier as a function of power consumption using planar pn junction diodes as temperature sensors and SOI resistors as the heat…
-
Thermal design guidelines for a three-dimensional (3D) chip stack, including cooling solutions
The thermal resistance of a three-dimensional (3D) chip stack is evaluated, based on the measured thermal resistances of 3D stacked thermal test chips which are implemented with PN junction diodes for temperature sensors and diffused resistors for heating.
-
Experimental thermal resistance evaluation of a three-dimensional (3D) chip stack, including the transient measurements
In this study, 3D stacked test chips are fabricated, which are implemented with PN junction diodes for temperature sensors and diffused resistors for heating.
-
Experimental thermal resistance evaluation of a three-dimensional (3D) chip stack
In this study, 3D stacked test chips are fabricated, which are implemented with PN junction diodes for temperature sensors and diffused resistors for heating, and the thermal conductivity of the interconnection in actual 3D stacked structure is experimentally obtained.
-
MEMS-Based Uncooled Infrared Focal Plane Arrays
The SOI diode uncooled IRFPA uses single- crystal pn junction diodes as temperature sensors .
-
Networked wireless microsystem for remote gastrointestinal monitoring
The LIAP integrates a forward biased pn - junction diode temperature sensor and an ion-selective field effect transistor (ISFET) pH sensor, a mixed-signal ASIC (Fig. 2) implemented on a 3V, 2-poly, 3-metal 0.6-micron CMOS process provided by…
-
Toward a miniature wireless integrated multisensor microsystem for industrial and biomedical applications
The sensor array consists of a dissolved oxygen (DO) sensor [11], [12], a pH-sensitive ion-selective field effect transistor (ISFET) [13], [14], a standard PN - junction silicon diode temperature sensor [15], and a dual electrode direct con- tact conductivity sensor [16].