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Supplier: Digi-Key Corporation
Description: PHOTODIODE SILICON PN JUNCTION
- Spectral Response: IR
- Photodiode Package / Mounting: Other
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Supplier: Excelitas Technologies Corp.
Description: 32-Element, 0.8mm pitch, Silicon Photodiode Array This is a 32-Element photodiode array consisting of 32 discrete silicon PN photodiodes mounted at a 0.8mm pitch. It is designed to detect X-Rays in the range of 60-200kV, and as such can be equipped with a 0.45mm thick GOS:Tb scintillator screen
- PN, PIN, or Avalanche: PN Photodiode
- Spectral Response: X-ray
- Array: Yes
- Photodiode Material: Silicon
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Supplier: Para Light Corp.
Description: Founded in 1987, with over twenty years of continuous product innovation and technical development, PARA LIGHT is now a leader in the opto-electronic components world market. PARA LIGHT is ISO14001 and TS16949 certified, and has approximately 1500 employees, including a quality control staff of 80
- PN, PIN, or Avalanche: PN Photodiode
- Spectral Response: IR
- Photodiode Package / Mounting: Leaded
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Supplier: Hamamatsu Corporation USA
Description: Specifically designed for photodiode modules (C10439 series)
- PN, PIN, or Avalanche: PN Photodiode
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Supplier: Optek Technologies, Inc.
Description: Infrared Devices - Photodiode - Pill Pack - Through-Hole - Through-Hole & Wired
- PN, PIN, or Avalanche: PN Photodiode
- Spectral Response: IR
- Photodiode Package / Mounting: Other
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Supplier: Micropac Industries, Inc.
Description: The 61063 is a Silicon Photodiode in a package designed to be mounted in a double-clad printed circuit board. It is lensed for minimum response to stray light. Fast operating speed makes this device the best option in applications where speed considerations predominate. Available custom binned
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- Spectral Response: Visible
- PSD: Yes
- Photodiode Material: Silicon
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Supplier: Allied Electronics, Inc.
Description: Silicon PN Photodiode, TO-5 Package, 9 μA (Typ.) Short Circuit Current, -0.05 %⁄K (Typ.) Temperature Coefficient High sensitivity Low dark current High shunt resistance Excellent linearity For photodiode and photovoltaic cell operation Lead-free component BPW21R is a planar
- Photodiode Package / Mounting: Other
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Parts by Number for Pn Photodiode Top
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| OP900SL | Digi-Key | TT Electronics/Optek Technology | Sensors, Transducers | PHOTODIODE SILICON PN JUNCTION |
| OP790 | ASAP Semiconductor | OPTEK | Not Provided | PN junction silicon PhotoDiode |
| PN20 | AmericanMicroSemi | AMS | Optoelectronics:Photodiodes:General-Purpose | Optoelectronics:Photodiodes:General-Purpose |
| PN334 | AmericanMicroSemi | AMS | Optoelectronics:Photodiodes:PIN-Type | Optoelectronics:Photodiodes:PIN-Type |
Conduct Research Top
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Photodiode Characteristics and Applications (.pdf)
. V0. Planar diffused silicon photodiodes are simply P-N junction diodes. the junction. The inter-diffusion of electrons and holes between the. A P-N junction can be formed by diffusing either a P-type impurity. N and P regions across the junction results in a region with no free. (anode
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Avalance Photodiode (APD)
Avalanche Photodiode (APD) is a specialized PIN photodiode to operate with high reverse bias voltages. Large reverse voltages generate high electric fields at the P-N junction. Some of the electron hole pairs passing through or generated in this field gain sufficient energy to create additional
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Technical Reference: How Does a Photodiode and Phototransistor Work?
, the term rectifier is usually associated with rectification of some sort whereas a diode can be a rectifier, a zener, a four-layer device, etc. Go to Top. What is a depletion zone and why is it important?. When a PN junction is reverse biased, a region of high resistance (or a region depleted
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Technical Reference: What is a Depletion Zone and Why is it Important?
When a PN junction is reverse biased, a region of high resistance (or a region depleted of carriers) is formed. The extent of this depletion is proportional to the reverse voltage applied. American Microsemiconductor manufacturers of Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrated
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Light Levels and Noise Guide Detector Choices
. This can be very impor-. multiplier tubes. They are also much. useful for measurements that must. tant when the light source is diffuse. more robust and considerably less. JULY 2000. PHOTONICS SPECTRA 149. Technology. Close-Up. Antireflection Coating. SiO (Thermally. 2. Grown). +. P Active Area PN Junction
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Fiber Optic Antenna Link OFW-5800 GPS
the right to change or improve specification without notice. Revised 8/07. Mechanical Dimensions & Layout. FO-RF Receiver Unit, 4 Channel. PN: MP-4R-5800RX. PRODUCT MECHANICAL DETAIL SHEET. 19.000. SLOT 4. SLOT 1. SLOT 3. SLOT 2. SUPPLY 2. SUPPLY 1. OPT PWR OK. OPT PWR OK. OPT PWR OK. OPT PWR OK. SUPPLY 1
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Technical Reference: What is an FET and How Is It Different from a Bipolar Transistor?
rectifier is usually associated with rectification of some sort whereas a diode can be a rectifier, a zener, a four-layer device, etc. Go to Top. What is a depletion zone and why is it important?. When a PN junction is reverse biased, a region of high resistance (or a region depleted of carriers
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Technical Reference: Why is The Semiconductor Device Called a Tunnel Diode?
with currents up to 1,000 amps or more. Also, the term rectifier is usually associated with rectification of some sort whereas a diode can be a rectifier, a zener, a four-layer device, etc. Go to Top. What is a depletion zone and why is it important?. When a PN junction is reverse biased, a region of high
Engineering Web Search: Pn Photodiode Top
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Photodiode - Wikipédia
Photodiode Un article de Wikipédia, l'encyclopédie libre.
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Gambar:Photodiode symbol.svg - Wikipédia
Gambar:Photodiode symbol.svg Ti Wikipédia, énsiklopédia bébas basa Sunda
- Vishay / Small Signal & Opto Products (SSP) - BPW21R -...
- Honeywell - SD1440-002L - Emitters and Detectors -...
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An optical measurement method for PN junction depth
International Conference on Item Title: An optical measurement method for PN junction depth ISBN: 0-7803-0535-3 Publisher Name: IEEE Publisher
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Measurement method of pn junction depth using light spectrum...
Measurement method of pn junction depth using light spectrum response
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Photosensor Modules Information on GlobalSpec
Avalanche Photodiode PN Photodiode PIN Photodiode
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Photodiodes Specifications on GlobalSpec
PN Photodiode A two-electrode, PIN Photodiode PN Photodiode UV Visible X-ray Help with Photodiodes facets: