Ta2O5, HfSiOx. Metal films: Al-Cu-Si, W, TiW, Co, TiN, TaN, Ta-Al, Ir, Pt, Ru, Au, Ni, etc. Electrode films: doped
poly-Si (dopant: B, N, O, P, As), amorphous-Si, WSix, Pt, etc. Other doped films (As, P), trapped inert gas (Ne, Ar, Kr, etc.), C (DLC). Ferroelectric thin films, FRAM, MRAM, GMR, TMR; PCM, GST, GeTe. Solder bump composition: SnAg, SnAgCuNi. MEMS: thickness and composition of ZnO, AlN, PZT. SAW device process: thickness and composition of AlN, ZnO, ZnS, SiO2(piezo film); Al, AlCu...
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