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Part # Distributor Manufacturer Product Category Description
IRF7303/SI9936DY (POWER MOSFET) National Microchip Not Provided Not Provided Not Provided

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  • Silicon RF Power MOSFETS
    Silicon RF Power MOSFETS. Providing general guidelines for understanding the design and operation of the transistors, this book describes the physics, design considerations and RF performance of silicon power MOSFETs.
  • Universal Power MOSFET Interface IC (TC4420/9)
    current, and logic inputs that can withstand up to 5V negative swings. Although designed as a power MOSFET driver, it can act as a level shifter, comparator, waveshaper and pulse transformer driver, to mention a few of its possible uses.
  • Considerations for Driving Power MOSFETs in High-Current, Switch Mode Regulators
    The low on-resistance and high current carrying capability of power MOSFETs make them preferred switching devices in SMPS power supply design. However, designing with these devices is not as straightforward as with their bipolar counterparts. Unlike bipolar transistors, power MOSFETs have
  • Using NEC Optocouplers as Gate Drivers in IGBT and Power MOSFET Applications
    Reviews the characteristics and technical requirements of using an NEC high speed optocoupler to gate drive an IGBT or Power MOSFET.
  • NexFET Power MOSFETs Quick Reference Guide (.pdf)
    Today's designers of high-power computing, networking, server systems and power supplies face increasingly stringent energy-efficient requirements. Texas Instruments' acquisition of CICLON Semiconductor Device Corporation expands TI's ability to improve energy efficiency in end-equipment designs.
  • Matching MOSFET Drivers to MOSFETs
    decision, there are multiple variables involved when selecting the proper MOSFET driver for the MOSFET being used in your design. Parameters such as input-to-output propagation delay, quiescent current, latch-up immunity and driver current rating must all be taken into account. Power dissipation
  • Gate Resistor Design Guidelines for SupreMOS MOSFETs
    The faster switching of power MOSFETs enables higher power conversion efficiency. However, parasitic components in the devices and boards are involving switching characteristics more as the switching speed increases. This creates unwanted side effects, like voltage spikes or poor EMI performance.
  • Driving and Layout Design for Fast-Switching Super-Junction MOSFETs
    Power MOSFET technology has been developed towards higher cell density for lower on-resistance.

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