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  • Options for Semiconductor Process Tool Temperature Control (.pdf)
    and electricity. Thus, the supply pressure at the. While chillers are typically the. Tool Requirements. chiller or heat exchanger typically. recommended choice for process. The PVD tool features two. has to be higher than 65 psi(g). cooling applications, they may not. identical left and right halves. Each
  • HPR30 Series Orifice Sampling Process Gas Analysers (.pdf)
    Grease: Silicone based vacuum grease used for ‘O’. ring lubricant have similar characteristic peaks as pump oils. RGA Spectrum of IPA. www.HidenAnalytical.com. TiN Deposition: A Wafer Cycle Profile. • TiN Process Endura PVD. • Reagent Gas Levels Monitored. • 8mTorr process pressure. • Ultrapure Ti
  • A Room Temperature, Low-Stress Bonding Process to Reduce the Impact of Use Stress on a Sputtering Target Assembly (.pdf)
    deposition (PVD) process, and the target assembly's ability to withstand this stress has a large effect on the resulting deposition rates, yields, and film properties. One of the major sources of stress is the coefficient of thermal expansion (CTE) mismatch between metal targets in semiconductor processes
  • MICRO: Taking Control
    A control system attached to a PVD tool can be used to customize recipes during process development, perform process monitoring to detect misprocessed wafers, and optimize PM cycles. he increasing demand for fewer defects, higher throughput, and cost reductions in semiconductor processing has
  • Medical Device Link .
    manufactures the system with high- and low-RF generators, computer and manual control systems, process temperature control, multiple gas flows, mass-gas-flow controllers, and automated vacuum chamber doors. Plasma Etch Inc., 3522 Arrowhead Dr., Carson City, NV 89706. Plasma treatment system A plasma
  • Time-Resolved Ionisation Studies of the High Power Impulse Magnetron Discharge in Mixed Argon and Nitrogen Atmosphere (.pdf)
    High power impulse magnetron sputtering (HIPIMS) is a new method for physical vapour deposition (PVD) based on magnetron sputtering. It utilises transient impulse (short pulse) glow discharges with very high power and current density (up to 3 kWcm-2 and 4 Acm-2 respectively at a duty cycle of <5%
  • MICRO: Controlling particles in sputter deposition modules
    Focusing on external and internal sources of contaminants has led to continuing improvements in the particle performance of PVD tools. As IC geometries continue to shrink because of market demands for high-speed products, control of process-related particles that can cause catastrophic device
  • MICRO:Rosenberg (March 2001)
    . Equally important, in the face of an inexorable trend toward smaller geometries, is the need to reduce and control process-generated particles that can cause product defects. The industry has focused on particles generated by physical vapor deposition (PVD) refractory metal processes involving titanium

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