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  • Solid State RF/Microwave Switch Technology: Part 2
    ,. respectively. This switch can handle RF. Figure 8: FET Equivalent Circuits – “On” and “Off” States. power levels up to 6.25 W. done by using a 5 kΩ to 10 kΩ resistor in. A Practical Design Hint. series with the gate of the FET. This is a very. PIN diode circuit performance at RF fre- simple bias network
  • GaAs FETs as Control Devices
    Gallium arsenide MESFETs are being used in RF control. device applications as switches and attenuators.They are. very easily adapted to monolithic circuit form, dissipate. essentially no power and can easily be designed into. broadband circuits. APN2015.qxd GaAs FETs as Control Devices
  • Skyworks De-embedded Scattering Parameters
    to perform their intended function. These sig-. nals are applied via the bias tees which are built into the VNA, so. any RF performance effects of these bias tees are also inherently. calibrated out of the performance measurement. Other products, such as RF switches, digital attenuators, voltage
  • Schottky Diodes
    • FEBRUARY 2009. FEATURE ARTICLE. www.mpdigest.com. spreading the parallel plates In radio receivers mixers are. farther apart. The relationship designed to convert radio. between reverse bias voltage frequency (RF) energy to an. and diode capacitance is. intermediate frequency (IF) as. efficiently
  • UNDERSTANDING TEMPERATURE & POWER COEFFICIENT IN ATTENUATORS
    . the entire operating frequency range. To carry out such measurements with good accuracy requires a set of high-power,. broadband bias tees and good matching techniques. The test set-up is shown in the MIL- A-3933 document. Case 3: TCA of Switched Programmable Attenuators. Switched Programmable

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