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Parts by Number for Sapphire Top

Part # Distributor Manufacturer Product Category Description
8001 ASAP Semiconductor SAPPHIRE Not Provided Sapphire transparent black premium silicone case for iPhone 3G -
100314-3L ASAP Semiconductor SAPPHIRE Not Provided Sapphire Video Card 100314-3L HD 6870 1GB DDR5 256Bit PCI Expres

Conduct Research Top

  • Sapphire
    Sapphire is a high purity and high density, single crystalline form of aluminum oxide, which may contain chromia, titania, yttria, or other dopants. Sapphire is usually transparent or translucent. Sapphire ceramics are used in lasers, substrates, jewel bearings, watch crystals, or other specialized
  • Wafer Carriers in Sapphire [Comparison of Quartz and Sapphire]
    Insaco, Inc has become recognized as a worldwide leader in custom machined ceramic and sapphire parts for the semiconductor industry. Through this experience, Insaco offers multiple hole wafer carriers in sapphire for GaAs, Indium Phosphide, and other semiconductors. Insaco has also developed
  • Optical Properties of Single-Crystal Sapphire Fibers
    Single-crystal sapphire fibers have been grown with the laser-heated pedestal-growth method with losses as low as 0.3 dB/m at 2.94 um. With the incorporation of a computer-controlled feedback system, fibers have been grown with less than 60.5% diameter variation, or 1.5 um for a 300-um fiber
  • Sapphire Viewport Transmission Curve
    Sapphire is a synthetic, hexagonal single crystal anisotropic material which displays substantially different physical, thermal, dielectric and optical characteristics when measured along different axes. MDC sapphire viewports are constructed using 90° crystal orientation, where the crystal
  • Silicon on Sapphire (SOS)
    Silicon on sapphire (SOS) is a hetero-epitaxial process wherein a thin layer of silicon is 'grown” on a sapphire (Al2O3) wafer. SOS is part of the silicon on insulator (SOI) family of CMOS technologies. Silicon on sapphire is primarily used in military and space applications because of its inherent
  • Sapphire Luminescence - F Centers
    On the basis of an extensive study of the optical behavior of neutron-bombarded crystalline sapphire we proposed that oxygen vacancies with one electron (F centers) and two electrons (F centers) are responsible for the 4.8 and 6.1 eV absorption bands, respectively. This defect model has been
  • Hydrogen in Sapphire - Part 2
    and ceramic specimens were annealed in the presence of supercritical water at 850 or 900 degrees C under 1500 MPa pressure. PII: S1359-6454(99)00449-8 Acta mater. 48 (2000) 1495±1504. www.elsevier.com/locate/actamat. HYDROGEN DEFECTS IN a-Al2O3 AND WATER. WEAKENING OF SAPPHIRE AND ALUMINA CERAMICS
  • Hydrogen in Sapphire - Part 1
    : S1359-6454(99)00448-6 Acta mater. 48 (2000) 1481±1494. www.elsevier.com/locate/actamat. HYDROGEN DEFECTS IN a-Al2O3 AND WATER. WEAKENING OF SAPPHIRE AND ALUMINA CERAMICS. BETWEEN 600 AND 10008CÐI. INFRARED. CHARACTERIZATION OF DEFECTS. A. K. KRONENBERG1, J. CASTAING2{{, T. E. MITCHELL3 and S. H.

Engineering Web Search: Sapphire Top