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Supplier: Insaco, Inc.
Description: CVD silicon carbide substrates or parts machined to your specifications
- Specialty Ceramic Type: Silicon Carbide, Tungsten Carbide (WC)
- Shape / Form: Fabricated / Custom Shape, Plate / Board (e.g., Fiberboard), Wafer / Substrate, Tube Stock, Specialty / Other
- Hollow Stock / Shape: Yes
- Applications: Biocompatible / Bioceramics, Electrical / HV Parts, Electronics / RF-Microwave, Structural, Wear Parts / Tooling, Refractory / High Temperature Materials
Description: suited for Ku-band communications, the TGA2572 supports key commercial and defense-related frequency bands. TriQuint’s 0.25µm GaN on SiC process offers superior electrical performance through Ku-band while maintaining high reliability. In addition, the use of SiC substrates provides optimum
- Life Cycle Stage: Maturity
- Device Type: Power Operational Amplifiers
Description: electrical performance through Ku band while maintaining high reliability. In addition, the use of SiC substrates provides optimum thermal performance necessary for high power operation. Lead-free and RoHS compliant.
Description: for a superior thermal management. The TGA2312-FL uses Triquint 0.25um GaN on SiC technnology which provides superior performance while maintaining high reliability. In addition, the use of SiC substrates provides optimum thermal performance necessary for reliable high power operation. Lead-free
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- RoHS Compliant: Yes
- Package Type: Other
Supplier: Saint-Gobain Surface Conditioning Group
Description: , sapphire and SiC wafers. It is also suitable for other ceramic based substrates. Features: High purity NanoSiC slurries Readily available in commercial quantities Provides fast MRR and controlled surface finish Does not recrystallize like colloidal silica Can be recirculated to maximize life
- Type: Polishing
- Products / Materials Finished: Semiconductors / Electronics (Wafers)
- Form: Slurry
- Abrasive Grain Type: Silicon Carbide
Supplier: KLA-Tencor Corporation
Description: for defects, and film thickness uniformity, of opaque substrates, epi layers, and transparent film coatings (SiC, GaN, sapphire). Application High Brightness Light Emitting Diodes (HBLEDs) The platform is designed for inspection of transparent materials such as sapphire and GaN and can detect a wide
- Form Factor: Wafer Probing System
- Mounting / Loading: Floor Mounted / Stand-alone
- Applications: Semiconductor Wafers, CVD / PVD Films
- Measurement Capability: Defects / ADC, Optical Constants (n, k)
Supplier: Saint-Gobain Surface Conditioning Group
Description: residues without harming delicate ceramic, glass or silicon substrates. A 5% solution of AmberClean L53H effectively lowers surface tension to <30 dynes/cm. Features & Benefits Cleans diamond, SiC and other slurries and process residues effectively Non-aggressive toward ceramic, glass
- Type: Aerosol / Contact Cleaner, Cleaner / Cleaning Agent
- Aqueous / Water-based: Yes
- pH: Mild Alkaline Cleaner / Agent (8.5 to 11 pH)
- Features: Biodegradable
Description: . In addition, our furnaces are used in the production of custom Chemical Vapor Infiltration (CVI) of pyrolytic carbon into carbon-carbon composites and special pyrolytic graphite coatings, Chemical Vapor Deposition (CVD), on graphite substrates. Our machine shop is fully equipped to finish every
- Fabrication Process: Grinding, Machining
- Application / Industries Served: Chemical Processing, Electrical / HV, Electronics / RF-Microwave, Foundry / Metal Processing, Optical Components, Wear Parts / Tooling, Other
- Materials: Carbon / Graphite, Silicon Carbide (SiC)
- Composite: Yes
Find Suppliers by Category Top
Featured Products for Sic Substrate Top
For over 55 years, Insaco has been synonymous with excellence in the development and production of high precision machined parts made from Ceramics and other hard materials. Materials we machine include: *Alumina 94% *Alumina 99.5% *Alumina 99.9% *Zirconia Toughened *Alumina *Sapphire (single crystal) *Alpha Alumina Oxide *AluminumNitride *Sialon *Silicon Nitride *Boron Carbide (B4C) *Silicon Carbide *Silicon Carbide (SiC) *Silicon Carbide - CVD (SiC)® *Tungsten Carbide *Cordierite... (read more)
Browse Ultra-hard Materials Machining Datasheets for Insaco, Inc.
MINTEQ® International Inc, Pyrogenics Group
Pyroid® Pyrolytic Graphite for Semiconductor
. Stability at high temperature and vacuums. Extreme resistance to thermal shock. Temperature tolerance from cryogenic to > 2000 ° C. Customer Benefit: Near zero thermal expansion means the grids maintain their relative spacing across of range of temperature and energy settings. This translates into more precise control for depositing dopant atoms into the substrate. Typical Applications . Ion Implantation Grids. Wafer Trays. Electrodes for Plasma Etch. Boats... (read more)
Browse Datasheets for MINTEQ® International Inc, Pyrogenics Group
Conduct Research Top
SiC Materials and Devices, Volume 2
SiC Materials and Devices, Volume 2. Reviewing state-of-the-art areas in SiC technology and materials and device research, this text explores the growth of SiC substrates; deep defects in different SiC polytypes; recent work on SiC JFETs; and complex, controversial issues in bipolar devices
Silicon Carbide (SiC)
silicon carbide can be transparent (Moissanite). Silicon carbide has found wide application due to its versatility and a relatively low raw material cost. Depending on the purity and density SiC is used for refractory tubes, industrial crucibles, wafer semi-insulating substrates, wear components
EETimes.com | Electronics Industry News for EEs & Engineering Managers
, according to Philips Semiconductors chief executive Frans van Houten. Intrinsic touts micropipe-free SiC substrates Intrinsic Semiconductor has started production of initial lots of 100-mm SiC substrates and
MICRO: Special Apps
and the limited availability of GaN substrates. While diamond has the highest mobilities, large-area single-crystal diamond substrates are not available, and diamond has no n-type dopant. SiC, however, has the large band gap and high thermal conductivity necessary for elevated-temperature operation
Edge-Seal Mounting Support for Diesel Particulate Filters (.pdf)
by the. the L-Seal design. The compression. U.S. Heavy-Duty FTP transient cycle [1, 4]. characteristics of A286 increase significantly. Different filter substrate materials such as. (>20%) during heat treatment as the material. advanced ceramics, SiC, knitted ceramic and. precipitate work-hardens. Further heat
Supporting Reduced Emissions (Diesel Progress) (.pdf)
(SiC), knitted wire mesh and sintered metals have been selected, based on high filter efficiency, thermal shock resistance, low space requirements, low system mass and low thermal expansion coefficients. Layout 1 DPNA927.qxp 6/27/06 10:15 AM Page 1. Suppor. ACS Industries'L. ting Reduced
SOI CMOS Technology for RF System-on-Chip Applications (.pdf)
per year by 2005. Recently,. the transistors. With such a thin-film,. tivity substrate. Using a near intrin-. the two largest SIMOX and BESOI. source and drain junction/depletion. sic substrate to reduce the capacitive. suppliers have formed an alliance. width of the MOS transistors can be. coupling
resistance due to its higher coefficients of thermal expansion and lower thermal conductivity compared to other pure ceramic materials such as silicon carbide (SiC).
Engineering Web Search: Sic Substrate Top
- Graphene - Wikipedia, the free encyclopedia
Light-emitting diode - Wikipedia, the free encyclopedia
Green electroluminescence from a point contact on a crystal of SiC recreates H. J. Round's original experiment from 1907.
Mat. Res. Soc. Symp. Proc. Vol. 719 ? 2002 Materials Research...
films on porous SiC are slightly less defective and more strain-relaxed (some completely relaxed) when grown on porous SiC substrate, as compared to
Vishay Semiconductors Physics of Optoelectronic Devices...
80097 50 Rev. 1.2, 05-Jul-04 Vishay Semiconductors tor between the substrate and DH-structure and Anode window layer on the DH-structure effect an
- Simulations of light extraction and light propagation...
Crystal growth of AlN: Effect of SiC substrate
Title: Crystal growth of AlN: Effect of SiC substrate Authors: Sibin Zuo, Xiaolong Chen, Liangbao Jiang, Huiqiang Bao, Jun Wang, Liwei Guo, Wenjun
- Fujitsu Develops Breakthrough Technology for Low-Cost...
Substrate Integrated Optoelectronic Devices for Radio over...
Item Abstract: The concept of substrate integrated circuit (SIC) is applied to the optoelectronic devices.