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Parts by Number Top

Part # Distributor Manufacturer Product Category Description
06035J5R6BAWTR Perfect Parts Corporation AVX CORP Film Capacitor CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 50 V, 0.0000056 uF, SURFACE MOUNT, 0603
12101K6R8CBTTR Perfect Parts Corporation AVX CORP Film Capacitor CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 100 V, 0.0000068 uF, SURFACE MOUNT, 1210
06033J1R5ABTTR Perfect Parts Corporation AVX CORP Film Capacitor CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000015 uF, SURFACE MOUNT, 0603
SC06801518 Perfect Parts Corporation SKYWORKS SOLUTIONS INC Film Capacitor CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 0.000068 uF, SURFACE MOUNT, 0202

Conduct Research Top

  • Silicon Nitride (Si3N4)
    Silicon nitride (Si3N4) is a compound of silicon and nitrogen. Silicon nitride has superior mechanical properties and forms a protective SiO2 skin at high temperatures. Silicon nitride is difficult to sinter by conventional means because the material dissociates above 1800oC.
  • Technical Article: Silicon Nitride Film Stress (.pdf)
    LPCVD Silicon Nitride is a deposition that coats all of the exposed areas of the wafer. The difference difference in mechanical properties between nitride and the silicon wafer will introduce a "stress" in the wafer+nitride system...
  • Laser Scribing Thin Silicon Nitride Films
    Silicon dioxide and titanium dioxide have been used as AR coatings in solar cells but SiO has a low refractive index whereas TiO does not contribute to surface passivation. Silicon nitride is an important exception to the general rule that carbide and silicide films are usually electrically
  • Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology
    Thin silicon nitride (Si3N4) films deposited using plasma-enhanced chemical deposition (PECVD) method have been used as metal-insulator-metal (MIM) capacitor dielectric for GaAs hetero-junction bipolar transistor (HBT) technology. The characteristics of the films, which were deposited at 300oC
  • Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology
    topography. Additionally, the process typically can only have. a maximum temperature of 300°C, as device degradation can occur at higher temperatures. The dielectric materials evaluated. are plasma-enhanced chemical vapor deposition PECVD, silicon nitride Si3N4, polyimide, and photodefinable
  • Nitride (AIN, BN)
    Nitride ceramics are compounds of a metal or metalloid (Si, B) and nitrogen such as titanium nitride (TiN), silicon nitride (Si3N4), boron nitride (BN) or aluminum nitride (AlN). Nitrides are relatively inert and have good thermal conductivity combined with high electrical insulation capability
  • Mechanical Response of High Performance Silicon Carbides (.pdf)
    and silicon nitride based ceramics because of their greater resistance to thermal shock compared with oxides.
  • Evaluating the use of hard-mask films during bulk silicon etching
    nitride or thermal oxide (SiO ) cannot be used for this purpose; either films that can be deposited at low temperatures or spin-on coatings are required. The study presented here investigated the use of two such films LPCVD silane-based silicon

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