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Supplier: Excelitas Technologies Corp.
Description: An Avalanche Photodiode (APD) provides higher sensitivity than a standard photodiode. It is ideal for extreme low-level light (LLL) detection and photon counting. Offered in Silicon or InGaAs materials, these devices provide detectivity from 400 nm - 1100 nm. Multiple configurations are available
- Photodiode Material: Silicon
- PN, PIN, or Avalanche: Avalanche Photodiode
- Spectral Response: Visible, IR
- Array: Yes
Supplier: OSI Optoelectronics
Description: FCI-H125G-10 A low noise, high bandwidth photodetector plus transimpedance amplifier designed for short wavelength (850nm) high speed fiber optic data communications. The hybrid incorporates a 250µm diameter large sensign area, high sensitivity silicon photodetector. It also includes a high gain
- Photodiode Material: Silicon
- PN, PIN, or Avalanche: PIN Photodiode
- Spectral Response: Visible, IR
- Photodiode Package / Mounting: Other
Supplier: Fairchild Semiconductor Corporation
Description: The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog
- Optocoupler Output: Phototransistor
- Mounting Option: Through Hole (Plug-in)
Description: and provides a voltage output which may be read by a data logger or similar reading device and then converted into watts per square metre (W/m2). The sensor itself is based upon a silicon photo-detector that is housed within a weatherproof, anodized aluminum body and is therefore suited to reliable
Supplier: Gilson Company, Inc.
Description: Units) scales with accuracy of ±2% or 0.05NTU, whichever is greater. The second control is a zero adjust for calibration with a turbidity-free sample. Other features include 0.5in LCD readout, solid-state silicon photodetector, and Tungsten lamp. MA-265K kit includes meter, calibrating solution
- Measures Turbidity: Yes
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Featured Products for Silicon Photodetector Top
High Speed Silicon Photodiode Preamp Hybrids
the proximity of the transimpedance amplifier to the photodetector lowers the capacitance associated with long traces, therefore allowing higher bandwidth and sensitivity. Features. Silicon Photodetectors / Low Noise Transimpedance Amplifier. Low Cost. Large Active Area of 250µm. High Bandwidth / Wide Dynamic Range. Automatic Gain Control (AGC). Hermetically Sealed TO-46 Can. Single +3.3V to +5V Power Supply. Differential Output Applications. High Speed Optical Communications. Gigabit Ethernet... (read more)
Browse Photodiodes Datasheets for OSI Optoelectronics
Custom Optical Bandpass Filters
Optical bandpass filters selectively transmit targeted spectral bands and block out-of-band wavelengths across the range - improving signal-to-noise ratio and improving contrast …customized for central wavelength, spectral bandwidth, blocking range, and blocking level. NIR Bandpass filters are used whenever there is a need to increase the signal-to-noise ratio of photodetectors (silicon). They protect detectors from undesired ambient background radiation (e.g. sunlight) or in-house... (read more)
Browse Optical Bandpass Filters Datasheets for PIXELTEQ
Fairchild Semiconductor Corporation
6-Pin DIP Bilateral Analog FET Output Optocoupler
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages. Features. As a remote variable resistor: ≤ 100 Ω to ≥ 300M Ω. ≤ 15pF shunt capacitance. ≥ 100G... (read more)
Browse Optocouplers Datasheets for Fairchild Semiconductor Corporation
Mouser Electronics, Inc.
Vishay Semiconductors Infrared 90nm Emitting Diode
distribution makes it ideal for gesture remote control of televisions and gaming systems, where it provides excellent spectral matching with silicon photodetectors. The IR emitter's wider angle in the horizontal view helps maintain position flexibility for users, while the narrower angle in the vertical plane focuses the distributed radiant intensity. The infrared emitter released today offers fast switching speeds down to 15ns, low forward voltage down to 1.31V at 150mA, and an operating... (read more)
Browse Diodes Datasheets for Mouser Electronics, Inc.
Conduct Research Top
Non-Contac Optical Position Sensing Using Silicon Photodiodes (.pdf)
Although the use of silicon photodetectors for making quantitative light measurements has been long established, there exists a body of other measurement capabilities for such devices, which have gone generally unnoticed. These involve measurements of movements, angle, straightness, object location
Medical Device Link .
computer simulations indicating that the photoconducters transmit signals to the retinal cells using a current of 0.1 to 1.0 mA. While the human retina relies on approximately 800,000 living cells that function as photodetectors, the prototype device uses only 64 silicon photodetectors. The research team
Extinction Cross-Section Measurements of
that are not. of the lamp is monitored with a silicon photodetector. representative of actual distributions in the atmosphere. (Thorlabs PDA55) positioned near the output of the. Thus, cross-section measurements are needed on realis-. ﬁ ber (not shown). tic aerosol concentration levels that contain single par-. Although
Organic semiconductor devices for micro-optical applications
solar cells prepared by low cost processes are. expected to bring down the costs for solar electricity. Efficiencies of more than five percent have recently been. demonstrated. This progress closes the efficiency gap to amorphous silicon solar cells being on the market. The integration of organic
Night Vision Technologies
Multispectral (ZnS MS), Silicon (Si), AMTIR. All these materials can be used to make spherical infrared lenses as well as infrared mirrors and infrared windows. Return to Main Defence Page. Click on links to view Knight Opticals' Other Defence Products & Capabilities. Anti-reflective glass for Airport
Radiometic and Photometric Concepts Based on Measuremet Techniques (.pdf)
as a means to. n is the average refractive index of air. provide an absolute measurement.7 Photons, rather than. producing heat by absorption are instead converted di-. rectly to current in a semiconductor such as silicon. The optical path for seven reflections in the United De-. tector Technology Model
High Precision Optical Fiber Array Connector and Method
fiberoptic arrays for an optical crossbar switch. See, for example, High-Speed Optoelectronic VLSI Switching Chip with >4000 Optical I/O Based on Flip-Chip Bonding of MQW Modulators and Detectors to Silicon CMOS, Anthony L. Lentine, et al., IEEE Journal of Selected Topics in Quantum Electronics
Engineering Web Search: Silicon Photodetector Top
A hybrid AlGaInAs-silicon evanescent waveguide photodetector...
A hybrid AlGaInAs-silicon evanescent waveguide photodetector Hyundai Park1, Alexander W. Fang1, Richard Jones2, Oded Cohen3, Omri Raday3, Matthew N.
- Invited Paper Integrated AlGaInAs-silicon evanescent racetrack...
Solar cell - Wikipedia, the free encyclopedia
A solar cell made from a monocrystalline silicon wafer 7.1 Crystalline silicon 7.2 Thin films
Transistor - Wikipedia, the free encyclopedia
Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this
Intel trumpets world's fastest silicon photonic detector* ?...
A team lead by Intel researchers created a silicon-based Avalanche Photodetector (APD), a fancy bit of atom-wrangling in a light sensor that can
Silicon Photonic @ Intel
advance in the field of Silicon Photonics by achieving world-record performance using a silicon-based Avalanche Photodetector (APD) that could lower
OSA/OFC/NFOEC 2011 OWZ3.pdf OWZ3.pdf First Demonstration of...
was fabricated at the Cornell Nanofabrication Facility [6. It includes includes a silicon microring electro-optic modulator of 12-?m diameter and a
Silicon hetero-interface photodetector
Silicon hetero-interface photodetector Pub Acronym: LEOS-95 Pub Year: 1995 Pub Date: 1995 Meeting Dates: 30-31 Oct. 1995
Nanoporous silicon metal-semiconductor-metal visible light...
Nanoporous silicon metal-semiconductor-metal visible light photodetector