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Description: PM100-S: Fiber Optic Power Meter (Silicon photodetector) Simple optical power and loss measurement Features: 55dB dynamic range Capable of both single mode and multimode operation 1mm Silicon photo detector with 2.5 mm universal adaptor (ST, SC, and FC) Single push button zero
- Cable Type: Single-mode / Multimode
- Connector Type: FC, SC, ST
- Test Equipment Type: Fiber Optic Power Meter
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Supplier: OSI Optoelectronics
Description: FCI-H125G-10 A low noise, high bandwidth photodetector plus transimpedance amplifier designed for short wavelength (850nm) high speed fiber optic data communications. The hybrid incorporates a 250µm diameter large sensign area, high sensitivity silicon photodetector. It also includes a high gain
- Photodiode Material: Silicon
- PN, PIN, or Avalanche: PIN Photodiode
- Spectral Response: Visible, IR
- Photodiode Package / Mounting: Other
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Supplier: Allied Electronics, Inc.
Description: Planar Photodiode, 450 μA (Typ.) Short Circuit Current, 100 nA (Max.) Dark Reverse Current Low capacitance Fast switching time Low leakage current Linear response vs irradiance Hermetic TO-46 package with high dome lens This small area planar, passivated silicon photodetector
- Photodiode Package / Mounting: Other
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Supplier: Gilson Company, Inc.
Description: Units) scales with accuracy of ±2% or 0.05NTU, whichever is greater. The second control is a zero adjust for calibration with a turbidity-free sample. Other features include 0.5in LCD readout, solid-state silicon photodetector, and Tungsten lamp. MA-265K kit includes meter, calibrating solution
- Measures Turbidity: Yes
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Supplier: Avago Technologies
Description: The SFH551/1-1V is a low-cost 650nm digital receiver diode for simple optical data transmission with polymer optical fiber. It incorporates a photodetector with integrated IC and provides a TTL output signal. Maximum speed is 5MBd. The V-housing allows easy coupling of unconnectorized 2.2mm
- Photodiode Semiconductor: Silicon (400nm to 1100nm)
- Connector Type: Other
- Signal Output: TTL
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Supplier: Thorlabs, Inc.
Description: Menlo Systems' Avalanche Photodetector (APD) series provides an extremely light-sensitive alternative to traditional PIN photodiodes. The APDs are sensitve and fast enough for the characterization of pulsed lasers on the order of nanoseconds. The silicon avalanche photodiode of the APD210 provides
- Photosensor Type: Avalanche Photodiode
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Supplier: Advanced Photonix, Inc.®
Description: Silonex manufactures a range of solderable planar photodetectors suitable as individual detector elements, arrays or for power generation and conversion applications. All cell types are supplied with a clear moisture resistant coating and 100mm flying leads. For hybrid applications, leadless
- Photodiode Material: Silicon
- Spectral Response: Visible, IR
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Featured Products for Silicon Photodetector Top
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OSI Optoelectronics
High Speed Silicon Photodiode Preamp Hybrids
the proximity of the transimpedance amplifier to the photodetector lowers the capacitance associated with long traces, therefore allowing higher bandwidth and sensitivity. Features. Silicon Photodetectors / Low Noise Transimpedance Amplifier. Low Cost. Large Active Area of 250µm. High Bandwidth / Wide Dynamic Range. Automatic Gain Control (AGC). Hermetically Sealed TO-46 Can. Single +3.3V to +5V Power Supply. Differential Output Applications. High Speed Optical Communications. Gigabit Ethernet... (read more)
Browse Photodiodes Datasheets for OSI Optoelectronics -
PIXELTEQ
Custom Optical Bandpass Filters!
Optical bandpass filters selectively transmit targeted spectral bands and block out-of-band wavelengths across the range - improving signal-to-noise ratio and improving contrast …customized for central wavelength, spectral bandwidth, blocking range, and blocking level. NIR Bandpass filters are used whenever there is a need to increase the signal-to-noise ratio of photodetectors (silicon). They protect detectors from undesired ambient background radiation (e.g. sunlight) or in-house... (read more)
Browse Optical Bandpass Filters Datasheets for PIXELTEQ
Parts by Number for Silicon Photodetector Top
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| SD-076-11-11-011 | ASAP Semiconductor | SILICON DETECTOR | Not Provided | IR PHOTODETECTOR 2 Au Leads |
Conduct Research Top
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Non-Contac Optical Position Sensing Using Silicon Photodiodes (.pdf)
Although the use of silicon photodetectors for making quantitative light measurements has been long established, there exists a body of other measurement capabilities for such devices, which have gone generally unnoticed. These involve measurements of movements, angle, straightness, object location
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Changing Face of Photodetectors
often used in auto dimming, twilight detection, and exposure meter applications. CdS has the disadvantage of using Cadmium, a heavy metal that is considered harmful to the environment. Furthermore, part-to-part consistency is poor with CdS. Designers would prefer to use silicon photodiodes
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Calibration of the Broad Band UV Radiometer
the lamp was positioned at a distance of 50cm. Fig. 1. The calibration setup. The monochromatic output of the system, needed for measurement of the detector spectral response, was deter-. mined with standard silicon photodetector Model 730-5C calibrated and supplied by Optronic Laboratories
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Extinction Cross-Section Measurements of
that are not. of the lamp is monitored with a silicon photodetector. representative of actual distributions in the atmosphere. (Thorlabs PDA55) positioned near the output of the. Thus, cross-section measurements are needed on realis-. fi ber (not shown). tic aerosol concentration levels that contain single
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Light Levels and Noise Guide Detector Choices
Edge. Front. Contact. Depletion Region. N Back Dif. +. N-Type. fusion. Silicon Material. Back Metallization. Figure 2. A photodiode converts photons to electrons but usually. requires an external amplifier that reduces the detection system's. signal-to-noise ratio. number of collisions. P Layer
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Organic semiconductor devices for micro-optical applications
solar cells prepared by low cost processes are. expected to bring down the costs for solar electricity. Efficiencies of more than five percent have recently been. demonstrated. This progress closes the efficiency gap to amorphous silicon solar cells being on the market. The integration of organic
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Radiometic and Photometric Concepts Based on Measuremet Techniques (.pdf)
is the average refractive index of air. provide an absolute measurement.7 Photons, rather than. producing heat by absorption are instead converted di-. rectly to current in a semiconductor such as silicon. The optical path for seven reflections in the United De-. tector Technology Model QED-IOO
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Night Vision Technologies
is especially important when thermal imaging cameras are used in harsh desert like environments where the Germanium requires protecting. Other materials used in thermal imaging cameras which we supply are Germanium (Ge), Zinc Selenide (ZnSe), Zinc Sulphide (ZnS), Zinc Sulphide Multispectral (ZnS MS), Silicon
Engineering Web Search: Silicon Photodetector Top
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A hybrid AlGaInAs-silicon evanescent waveguide photodetector...
A hybrid AlGaInAs-silicon evanescent waveguide photodetector Hyundai Park1, Alexander W. Fang1, Richard Jones2, Oded Cohen3, Omri Raday3, Matthew N.
- Invited Paper Integrated AlGaInAs-silicon evanescent racetrack...
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Solar cell - Wikipedia, the free encyclopedia
A solar cell made from a monocrystalline silicon wafer 7.1 Crystalline silicon 7.2 Thin films
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Transistor - Wikipedia, the free encyclopedia
Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this
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Intel trumpets world's fastest silicon photonic detector* ?...
A team lead by Intel researchers created a silicon-based Avalanche Photodetector (APD), a fancy bit of atom-wrangling in a light sensor that can
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Silicon Photonic @ Intel
advance in the field of Silicon Photonics by achieving world-record performance using a silicon-based Avalanche Photodetector (APD) that could lower
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OSA/OFC/NFOEC 2011 OWZ3.pdf OWZ3.pdf First Demonstration of...
was fabricated at the Cornell Nanofabrication Facility [6. It includes includes a silicon microring electro-optic modulator of 12-?m diameter and a
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Silicon hetero-interface photodetector
Silicon hetero-interface photodetector Pub Acronym: LEOS-95 Pub Year: 1995 Pub Date: 1995 Meeting Dates: 30-31 Oct. 1995