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Supplier: OSI Optoelectronics
Description: FCI-H125G-10 A low noise, high bandwidth photodetector plus transimpedance amplifier designed for short wavelength (850nm) high speed fiber optic data communications. The hybrid incorporates a 250µm diameter large sensign area, high sensitivity silicon photodetector. It also includes a high gain
- PN, PIN, or Avalanche: PIN Photodiode
- Spectral Response: Visible, IR
- Spectral Response Range: 1100 to 1650 nm
- Active Area Diameter or Length: 0.0098 inch
Supplier: Excelitas Technologies Corp.
Description: An Avalanche Photodiode (APD) provides higher sensitivity than a standard photodiode. It is ideal for extreme low-level light (LLL) detection and photon counting. Offered in Silicon or InGaAs materials, these devices provide detectivity from 400 nm - 1100 nm. Multiple configurations are available
- PN, PIN, or Avalanche: Avalanche Photodiode
- Spectral Response: Visible, IR
- Array: Yes
- Sensitivity: 12 to 62 A/W
Photodiodes - Photodiode, Planar; TO-46; 450 muA (Typ.); 0.40 V (Typ.); 100 nA (Max.); -40 de -- 70136727Supplier: Allied Electronics, Inc.
Description: Planar Photodiode, 450 μA (Typ.) Short Circuit Current, 100 nA (Max.) Dark Reverse Current Low capacitance Fast switching time Low leakage current Linear response vs irradiance Hermetic TO-46 package with high dome lens This small area planar, passivated silicon photodetector is designed
- Spectral Response Range: 400 to 1100 nm
- Rise Time: 1000 ns
- Operating Temperature: -40 to 257 F
- Dark Current: 100 nA
Supplier: Silonex, Inc.
Description: Silonex manufactures a range of solderable planar photodetectors suitable as individual detector elements, arrays or for power generation and conversion applications. All cell types are supplied with a clear moisture resistant coating and 100mm flying leads. For hybrid applications, leadless
- Spectral Response: IR
- Dark Current: 1700 nA
- Photodiode Material: Silicon
Description: such as LED light sources, silicon PIN photodetectors, and multimode optical fibers. In the pressure sensor light is reflected from a membrane back into the end of a multimode fiber, closely located to the membrane. Any vibration of the membrane caused by air pressure introduces modulation in the detectedShow More
Description: (with respect of SI) of photodetector response in the visible spectral region. Most participants were either commercial laboratories or university laboratories with the National Institute of Standards of Technology (NIST) serving as the host laboratory. Each laboratory determined the absolute responseShow More
Supplier: Gilson Company, Inc.
Description: Units) scales with accuracy of ±2% or 0.05NTU, whichever is greater. The second control is a zero adjust for calibration with a turbidity-free sample. Other features include 0.5in LCD readout, solid-state silicon photodetector, and Tungsten lamp. MA-265K kit includes meter, calibrating solution
- Measures Turbidity: Yes
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Back-Illuminated Silicon Photodiodes
BI-SMT Photodetector Series. The new single-channel, back-illuminated silicon photodiodes are specifically designed to minimize any “dead ” areas on the edges of the devices. Each photodiode is designed on a square surface mount package with dimensions similar to the actual chip. This makes it possible to have multiple detectors arranged in a tiled pattern for easy coupling to a scintillator. . There are currently three BI-SMT devices: the 33BI-SMT... (read more)
Browse Photodiodes Datasheets for OSI Optoelectronics
Excelitas Technologies Corp.
Photodiodes & Phototransistors
Excelitas utilizes Silicon and InGaAs materials for their photodiodes to provide detection from 220 nm to 1700 nm. These devices are offered in a variety of sizes to meet customer sensitivity and speed requirements. Phototransistors are examples of photodiode-amplifier combinations integrated within a single silicon chip. Learn More. Photodiodes are unique among light detectors in that when illuminated, they generate an output which is proportional to light level. They are solid state light... (read more)
Browse Photodiodes Datasheets for Excelitas Technologies Corp.
More Information Top
Integrated Silicon Optoelectronics
For silicon photodetectors , SiO2 (¯nsc = 1.45) and Si3N4 (¯nsc = 2.0), ARC-layers are most appropriate.
Silicon Photonics: Fundamentals and Devices
… 1 Ring Resonator 7.9.2 MZ Modulators at 10 Gb/s and Above 7.9.3 Microring Resonators 7.9.4 Reverse Biased p–n Diode 7.10 Performance of EO Modulators Problems References 7.8 8 Silicon Photodetectors 8.1 Introduction 8 …
OSA | Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm
In this paper, design, fabrication and characterization of an all- silicon photodetector (PD) at 1550 nm, have been reported.
S. M. Csutak, "High-speed short-wavelength silicon photodetectors fabricated in 130-nm CMOS process," pp. 135-145, 2003.
On the contrary, choosing dielectric material such as silicon oxynitride for waveg- uides requires that the silicon photodetector should be fabricated first, followed by the waveguide on top of the photodetector (Fig. 4-1(b)), unless we elect to fabri- cate poly …
Integrated Optical Interconnect Architectures for Embedded Systems
While crystalline silicon is transpar- ent for near infrared wavelengths (>1.1mm), silicon photodetectors can still be used in an on-chip interconnect context, for example for optical clock distribution through free space using 850nm wavelengths or by inducing defects in the …
A thin-film waveguide photodetector using hydrogenated amorphous silicon
Since the electrode spacing should be comparable to the drift length in order to max- imize carrier collection efficiencies, the amorphous sili- con photodetector is much thinner than a typical high- mobility crystalline silicon photodetector.
Photonic Network-on-Chip Design
3.6.2 Silicon Photodetectors . . . . . . . . . . . . . . . . . . . . . . . . .
Modern Materials and Technologies of Industrial Production
Light-Response Characteristics of Platinum Doped Silicon Photodetector B. Nararug, S. Ueamanapong, I. Srithanachai, S. Janprapha, A.L. Suwanchatree, S. Niemcharoen, .
5 Silicon Photodetectors and Receivers H. Zimmermann . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Abstract—We have fabricated vertical p-i-n silicon photodetec- tors that are monolithically integrated with compact silicon-oxyni- tride channel waveguides.
1.2.3 Integrated Silicon Photodetectors involving epitaxy and process modifications 1.3 Germanium photodetectors . . . . . . . . . . . . . . . . . .
Research is focused on three photonic components: 90 degree hybrids, poly- silicon photodetectors and QPSK modulators.
Planar And Channel Optical Waveguides Utilizing Silicon Technology
Fan, C.L. and Boyd, J.T., "Improvement in the Quantum Efficiency of Silicon Photodetectors at Near IR Wavelengths by Edge Illumination," Appl.