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  • TechBrief: Using SRAM with a PIC16CXX
    There are applications where a significant amount of data memory is required beyond what is in the micro-controller. For example, buffering communications data, creating large volatile tables and arrays. One interesting application is voice storage and playback. Some applications require relatively
  • Using External RAM with PIC17CXX Devices
    This Technical Brief shows how to connect a PIC17CXX device to external memory. It also provides instructions and calculations to help determine which speeds of SRAM work with which frequency crystal.
  • ADC1000-USB A/D Converter: Serial Port Interface Communications and Control Information
    Windows Interface Package. The ADC1000-USB utilizes a Cypress AN2131 microcontroller, which has a high speed 8051, combined with a USB ASIC. Program code and data coefficients are stored in external E²PROM and are loaded at boot-up via the I²C bus. The microcontroller has 8K of internal SRAM and 128K
  • Temperature Compensation of a Tuning Fork Crystal Based on MCP79410
    An increasing number of applications that involve time. measurement are requiring a Real-Time Clock device. The MCP79410 is a feature-rich RTCC that incorporates. EEPROM, SRAM, unique ID and time-stamp. This application note describes how to compensate the. parabolic thermal drift of some crystals
  • ADC1000 OEM Data Sheet
    speed 8051, combined with an USB ASIC. Program code and data coefficients are stored in external E2PROM, which are loaded at boot-up via the I2C bus. The microcontroller has 8K of internal SRAM and 128K of external SRAM. Due to memory mapping and paging constraints, only 96K of the external SRAM
  • Downloading HEX Files to PIC16F87X PICmicro (R) Microcontrollers
    The release of the PIC16F87X devices introduces the first mid-range family of devices from Microchip Technology that has the capability to read and write to internal program memory. This family has FLASH-based program memory, SRAM data memory and EEPROM data memory. The FLASH program memory allows
  • EETimes.com | Electronics Industry News for EEs & Engineering Managers
    Honeywell makes rad-hard 4-Mbit SRAM with SOI, 0.35-micron process Via's Cyrix acquisition may delay some microprocessor lines Hitachi to invest $350 million in Singapore fab for 256-Mbit production Hitachi to invest $350 million in Singapore fab for 256-Mbit production Judge says HP printer ASICs
  • MICRO: World Beat
    Alliance Semiconductor has placed the first volume order for chips from Tower Semiconductor's newest chip factory. The pure-play foundry says Alliance wants volume output of its 4-Mb asynchronous SRAM using Tower's 180-nm process. Shipments are scheduled for mid-2003. One of Tower's four partners

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