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Parts by Number Top

Part # Distributor Manufacturer Product Category Description
TA340 Radwell Keyence Corp Sensors & Switches, Sensor Amplifier AMPLIFIER FOR METAL PASSAGE SENSORS
TA340SO Radwell Keyence Corp Sensors & Switches, Sensor Controller METAL PASSIVE CONTROLLER
78507498257-1 Carlton-Bates Company OHMITE Resistor - Single Metal Film Resistor 100 Ohms 5W
78507498259-1 Carlton-Bates Company OHMITE Resistor - Single Metal Film Resistor 1000 Ohms 5W
TA0U4720 ASAP Semiconductor 0.47UF 20V TANT METAL CA Not Provided Not Provided
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Conduct Research Top

  • TA-MS Connection Optimisation and Improved Data Interpretation (.pdf)
    To optimise TA-MS equipment : New equipment can be configured with optimum connections. Existing systems should be connected through customised couplings. Novel methods are available e.g. the direct solid insertion probe. Data interpretation and methods : Library search, linear combination, matrix
  • Refractory Metals and Reactive Metals
    Refractory and reactive metals include boron (B), tungsten (W), tantalum (Ta), molybdenum (Mo), niobium (Nb) / columbium (Cb), zirconium (Zr), hafnium (Hf), thorium (Th), vanadium (V), chromium (Cr), cobalt (Co), rhenium (Re ), and titanium (Ti). Refractory metals and alloys are metals with melting
  • Case Study:GEN2 T-A (R) Composite Automotive
    powder metal steel components that were joined by sinter-brazing. The customer was drilling with a special solitude carbide TiN coated twist drill. The tool was run at 1600 RPM and .010 IPR and was holding true position requirements.
  • MICRO: 'Round the Circuit
    limits of Ta/TaN barrier technology, a team at Infineon's Munich Research Labs assessed the integration of metallic films required to keep copper metal lines from
  • MICRO:Building Copperopolis (Jan '99)
    deposition as well as electroless and electrolytic plating each with different grain sizes and fill characteristics. There are still many important issues to be resolved, however, before dual-damascene copper technology can be successfully implemented. Tantalum (Ta)- and tungsten (W)-based diffusion
  • Product Extra!
    bottom coverage of high-aspect-ratio structures. Degree of ionization is >90%, and sputter pressure is <1 15 millitorr. The system suits production of sub-0.18- um devices using films such as Ti, TiN, Ta, TaN, AlCu, and Cu seed layers. Applications include deposition of Ti/TiN liner/barrier layers

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