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IC Interconnect Components - Socket, Transistor; 8; Beryllium Copper; 0.156 to 0.218 in. -- 70207040Supplier: Allied Electronics, Inc.
Description: Transistor Socket, Brass Sleeve, Printed Circuit Terminal, Teflon Insulator These transistor sockets utilize hi-rel machined outer sleeves and gold-plated inner contacts assembled into a low profile insulator. The funnel entry design eliminates distortion or damage to the contact
- Package Type: TO
- Product Type: IC Socket
- Mounting: SMT
- Contact Plating: Gold Plating
Supplier: Techwell, Inc.
Description: Key Features Pb-free Available as an Option High Gain Bandwidth Product (fT) 10GHz High Power Gain Bandwidth Product 5GHz Current Gain (hFE) 70 Low Noise Figure (Transistor) 3.5dB Excellent hFE and VBE Matching Low Collector Leakage Current <0.01nA Pin to Pin Compatible
Description: Display an extensive combination of measurements Main 3¾ digit, 4000 count, LCD with bargraph plus three sub-displays (all with Data Hold) 10 Memory locations for data storage with easy recall Continuity beeper, Diode & Transistor test Advanced features including Relative
- Form Factor: Handheld
- Measurement Type: AC / DC
- Phase: Single Phase
- Display Digits: 3 Digits, Plus 1/2 Digit
Supplier: Kikusui America, Inc.
Description: The PAD-L Series, high performance and high reliability, is variable DC regulated power supply used in all fields, from research and development and quality control to manufacturing plants.This Series is made up of two excellent regulators: thyristor preregulator and power transistor Series
- Technology: Linear
- Style / Mounting: Enclosed, Cabinet
- Discrete DC Output Voltage: Other Voltages
- AC Input Voltage: 208 VAC, Other
Supplier: Visual Sound, Inc.
Description: Biamp Systems, Inc. The 801i is a single rack-space mixer, with eight mic/line inputs and one auxiliary line input. Each mic/line channel uses a differentially balanced, discrete transistor preamplifier for low noise and low distortion performance. Special features, including a limiter and remote
Supplier: TDI - Transistor Devices, Inc.
Description: Input: 28Vdc or 270Vdc Output: Standard Airborne 115Vac, 400Hz, 3 Phase (Custom Outputs Available) Power Level: 500VA to 10kVA Total Harmonic Distortion < 1% (Pure Sine) Protection Circuitry: Over-Voltage, Short Circuit, Over Current, No Load Operating Temp -54ºC to +71ºC
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Line / Load Reactors
3-Phase Reactors. Line/Load Reactors. Product Overview. Harmonic Compensated and IGBT Compatible. Increase Drive System Reliability. Filter Power Line Disturbances. Reduce Harmonics. Reduce Surge Currents. Reduce dv/dt. Extend Transistor Life. Reduce Motor Noise and Temperature. Reduce Voltage Doubling Effects. Improve True Power Factor. Absorb Power Line Spikes. BENEFITS OF USING LINE/LOAD REACTORS Guard-AC line/load reactors help keep your equipment running longer by absorbing many... (read more)
Browse Harmonic Filters Datasheets for MTE Corporation
Linear Integrated Systems, Inc.
LSK 489 Low-Noise, Low-Capacitance Dual N-Ch JFET
intermodulation distortion. . “The slightly higher noise of the LSK489, versus the LSK389 (0.5 nano volts), is not significant in most instances, while the much lower capacitance enables designers to produce simpler, more elegant circuit designs with fewer devices that cost less in production, ” Hall said. “Though the cascode is an effective technique for compensating for some undesirable transistor characteristics, the downside of using it is in higher circuit noise.  ... (read more)
Browse Junction Field-Effect Transistors (JFET) Datasheets for Linear Integrated Systems, Inc.
EFD Induction a.s.
Reduce distortion & costs hardening small gears.
on rugged, reliable IGBT transistor inverters. A complete system, the Weldac consists of a frequency converter, output matching section, busbar, external control system and coil connection. Modular design with independent IGBT inverters makes Weldac compact, saving valuable floor space and simplifying in-line integration and retrofitting. The Weldac system can be fitted with induction coils or contact welding heads. Induction Heating Industries: EFD Induction has to date installed more than 15,000... (read more)
Browse Induction Heaters Datasheets for EFD Induction a.s.
Conduct Research Top
Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity
OF STATE-OF-THE-ART RON-COFF PRODUCTS FROM. DIFFERENT PROCESS TECHNOLOGY AND CORRESPONDING. MOS. Q-TTUNE PRODUCTS AT 2 GHZ AND 5 GHZ. transistor. Coff. Ron. R C. Q (T. 1). Q (T. 1). Process Technology. on. off. tune. tune. (fs). at 2 GHz. at 5 GHz. Con. Con. Con. 0.5 Pm 10 nm Tox SOS. 756 . 105
Large-Signal Characterization and Modeling of MOSFET for PA Applications
modeling of Gm as a function of bias, as. well as other important extrinsic transistor parameters,. enables proper prediction of the 1-tone distortion. behavior for a transistor, which in turn determines the. quality of prediction for the 2-tone inter-modulation. product up to the 5th order
Large-signal Modeling of SiGe HBT for PA Applications
how the SiGe bandgap engineering impacts the large-signal behavior through a steeper gain compression at high currents and high power levels. It is also shown that the 2-tone inter-modulation products of a transistor are closely related to its 1-tone distortion characteristics. Finally an accurate
Consider the Discrete JFET When You Have a Priority Performance Objective
Though not as well known as the bipolar transistor or op amp, this long-established. transistor still excels in where you need to optimize circuit behavior, such as for lowest. noise. Many engineers are somewhat familiar with discrete bipolar transistors, such as the. venerable 2N2222
Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs
HBT technology was circumvented. by the introduction of a gating concept used in conjunction. with envelope feedback, and careful tradeoffs between circuit. complexity and performance. Designs that suit the on-chip integration. of the technique in GaAs HBT or Si bipolar junction transistor
Optocoupler Performance Comparison: NEC PS9552 vs. Avago HCPL-3120
Both the PS9552 and HCPL-3120 are optically-coupled isolators that employ a GaAlAs LED on the input side and a photo diode, a signal processing circuit, and a power output transistor on the output side. They feature large peak output current, fast switching speeds, undervoltage lockout protection
Fiber Optics: Multimode Transmissions
. philosophical. An analogy would be to require electronic. engineers to design circuits using transistor data only. specified in terms of mobility, volume and. recombination parameters. þÿ Technical Memorandum. 200. Fiber Optics: Multi-Mode Transmission. Fiber Optics: Multi-mode Transmission
Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN
. a cross-biasing approach, transistor stacking and deep n-well. process. Power handling techniques used for the switches and the. associated performance tradeoffs are discussed. The measured. noise figure of the LNA and the receive chain comprising both an. LNA and a switch is 1.5 dB and 3.0 dB
Engineering Web Search: Transistor Distortion Top
Transistor - Wikipedia, the free encyclopedia
Transistor From Wikipedia, the free encyclopedia For other uses, see Transistor (disambiguation).
Amplifier - Wikipedia, the free encyclopedia
2.3 Transistor amplifiers 2.4 Operational amplifiers (op-amps)
CMOS Models Transistor Distortion | Passive components content...
CMOS Models Transistor Distortion Based on symbolically defined devices (SDDs), this model predicts the nonlinear
RF transmitting transistor and power amplifier fundamentals...
RF transmitting transistor and Transmitting power amplifier fundamentals transistor design 1 TRANSMITTING TRANSISTOR DESIGN transistors are suitable,
MAT03 Data sheet
Bad color a Low Noise, Matched Dual PNP Transistor MAT03 FEATURES PIN CONNECTION Dual Matched PNP Transistor TO-78 Low Offset Voltage: 100 V Max (H
POWER TRANSISTOR CROSS datasheets and application notes, data...
The transistor characteristics are divided into .. Hollow Emitter Transistor Figure 6. Cellular Emitter Transistor: a. Cross Section single .. Tags:
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transistor 2N3819 datasheet and application note, data sheet,...
First line: fet junction transistor transistor 2N3819* 2n3819 transistor 2N3819 PHILIPS INTERNATIONAL Hnmrionents 2N3819 status Preliminary