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Parts by Number Top

Part # Distributor Manufacturer Product Category Description
NTE160 Allied Electronics, Inc. NTE ELECTRONICS Not Provided TRANSISTOR PNP GERMANIUM 30V IC=.01A TO-72 RF-IF AMP FM MIXER OSCILLATOR
NTE102 Allied Electronics, Inc. NTE ELECTRONICS Not Provided TRANSISTOR PNP GERMANIUM 25V 0.15A TO-5 PRE-AMP DRIVER OUTPUT
NTE127 Allied Electronics, Inc. NTE ELECTRONICS Not Provided TRANSISTOR PNP GERMANIUM 320V IC=10A TO-3 POWER OUTOUT HORIZONTAL AND VERTICAL D
NTE28 RS Electronics NTE Not Provided Germanium semiconductor transistor. Polarity is PNP, package:TO68 Japanese. Collector to base is 60 volts, to emitter is 45 volts. Maximum collector current is 60 amps, with typical forward current gain of 130.
NTE127 RS Electronics NTE Not Provided Germanium semiconductor transistor. Polarity is NPN, package:TO4. Collector to base is 320 volts, to emitter is 320 volts. Maximum collector current is 10 amp, with typical forward current gain of 15.
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Conduct Research Top

  • 6.09: Crucial Tech
    an error occurred while processing this directive] Once considered too exotic and expensive, germanium and gallium arsenide are starting to nudge out silicon as the new substrate for chips. [an error occurred while processing this directive] When the first transistor came out of Bell Labs in 1947
  • Computer Power User Article - Under Development
    and output, the source and drain. The new design features an input, an electrical output, and an optical output. Additionally, the new optical transistor is fashioned from gallium phosphide and gallium arsenide rather than the usual silicon and germanium. As injected electrical particles recombine
  • BiCMOS
    BiCMOS is a silicon-germanium (SiGe), bipolar semiconductor technology that combines the high speed of bipolar TTL with the low power-consumption of CMOS. Transistor-transistor logic (TTL) and complementary metal-oxide semiconductor (CMOS) are other, common semiconductor technologies
  • MICRO: 'Round the Circuit
    . The partners have been working together since January 2002 to develop an 180-nm SiGe heterojunction bipolar transistor module. The second phase of the four-year contract calls
  • MICRO: Chipworks Corner
    IBM, AMD use different dual-stress liner At the 2004 IEEE International Electron Devices Meeting (IEDM) in San Francisco, AMD and IBM jointly presented a paper on a dual-stress liner (DSL) technique for straining both the NMOS and PMOS transistor channels in their 90-nm processes. IBM had
  • Computer Power User Article - What's Happening
    block of computer chips. The IBM transistor combines silicon and germanium and can run at speeds as fast as 350 billion cycles per second. IBM expects within two years to release a high-speed communications chip based on the new transistor, which will feature low power consumption, making it ideal
  • MICRO: Transistorama
    Koen Snoeckx, Peter Verheyen, and Geert Eneman, gasps for breath, every instantly applicable solution that boosts transistor performance is more than welcome. Strain techniques, which introduce compressive or tensile stress in the transistor channel, provide such an elegant method of improving

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