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Description: PNP Germanium transistor for switching and amplifier applications in the audio-frequency range.
Description: NPN GERMANIUM TRANSISTO
Supplier: Allied Electronics, Inc.
Description: Germanium Complementaryyy Transistors Medium Power Amplifier 650 mW (Max.) Power Dissipation Designed for use as a medium power amplifier.
- Transistor Type / Technology: General Purpose BJT
- Polarity: PNP
- Package Type: Other
Description: PNP germanium power transistors designed for high-current applications requiring high gain and extremely low saturation voltage.
Description: PNP alloy junction power transistor merting military specification MlL-T-19500, 36A. The maximum collector-emitter voltage rating is 50volts, and the collector current rating is 5 amperes.
Supplier: IHS Product Design
Description: SEMICONDUCTOR TRANSISTOR,GERMANIUM/TYPE-2N1646
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American Microsemiconductor, Inc.
Bipolar Junction Transistor (BJT)
Description of bipolar transistor. The transistor is primarily used as a current amplifier. When a small current signal is applied to the base terminal of a bipolar transistor, it is amplified in the collector circuit. This current amplification is referred to as hfe or beta and equals Ic/Ib. As with all semiconductors, breakdown voltage of a transistor is also a design limitation. There are breakdown voltages that must be taken into account for each combination of terminals of a transistor... (read more)
Browse Power Bipolar Transistors Datasheets for American Microsemiconductor, Inc.
American Microsemiconductor, Inc.
links to our Technical Resources: Bipolar Transistor Tutorial. Diac Tutorial. Diode Tutorial. Diode Arrays Tutorial. ECG, SK, and NTE Components Tutorial. Germanium Diodes Tutorial. Junction FET Tutorial. MOSFETs Tutorial. SCR Tutorial Tutorial. Tunnel Diode and Back Diode Tutorial. Transient Voltage Supressor Tutorial. Triac Tutorial. Unijunction Transistor Tutorial. Varactor diode Tutorial. Zener Diode Tutorial. Pro Electron: Component Designation System Tutorial. The UJIT, CUJT, PUT, FLD... (read more)
Browse RF Diodes Datasheets for American Microsemiconductor, Inc.
American Microsemiconductor, Inc.
LOW NOISE GENERAL PURPOSE TRANSISTORS
LOW NOISE GENERAL PURPOSE Transistors from American Microsemiconductor. The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 hermetic metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. Quick Links: Product Specifications and ordering information for the. BC108- LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS. BC108B- NPN Transistor For General Purpose Audio Amplifiers. BC107- LOW NOISE GENERAL... (read more)
Browse Transistors Datasheets for American Microsemiconductor, Inc.
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|Part #||Distributor||Manufacturer||Product Category||Description|
|NTE160||Allied Electronics, Inc.||NTE ELECTRONICS||Not Provided||TRANSISTOR PNP GERMANIUM 30V IC=.01A TO-72 RF-IF AMP FM MIXER OSCILLATOR|
|NTE102||Allied Electronics, Inc.||NTE ELECTRONICS||Not Provided||TRANSISTOR PNP GERMANIUM 25V 0.15A TO-5 PRE-AMP DRIVER OUTPUT|
|NTE127||Allied Electronics, Inc.||NTE ELECTRONICS||Not Provided||TRANSISTOR PNP GERMANIUM 320V IC=10A TO-3 POWER OUTOUT HORIZONTAL AND VERTICAL D|
|NTE28||RS Electronics||NTE||Not Provided||Germanium semiconductor transistor. Polarity is PNP, package:TO68 Japanese. Collector to base is 60 volts, to emitter is 45 volts. Maximum collector current is 60 amps, with typical forward current gain of 130.|
|NTE127||RS Electronics||NTE||Not Provided||Germanium semiconductor transistor. Polarity is NPN, package:TO4. Collector to base is 320 volts, to emitter is 320 volts. Maximum collector current is 10 amp, with typical forward current gain of 15.|
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6.09: Crucial Tech
an error occurred while processing this directive] Once considered too exotic and expensive, germanium and gallium arsenide are starting to nudge out silicon as the new substrate for chips. [an error occurred while processing this directive] When the first transistor came out of Bell Labs in 1947
Computer Power User Article - Under Development
and output, the source and drain. The new design features an input, an electrical output, and an optical output. Additionally, the new optical transistor is fashioned from gallium phosphide and gallium arsenide rather than the usual silicon and germanium. As injected electrical particles recombine
BiCMOS is a silicon-germanium (SiGe), bipolar semiconductor technology that combines the high speed of bipolar TTL with the low power-consumption of CMOS. Transistor-transistor logic (TTL) and complementary metal-oxide semiconductor (CMOS) are other, common semiconductor technologies
MICRO: 'Round the Circuit
. The partners have been working together since January 2002 to develop an 180-nm SiGe heterojunction bipolar transistor module. The second phase of the four-year contract calls
MICRO: Chipworks Corner
IBM, AMD use different dual-stress liner At the 2004 IEEE International Electron Devices Meeting (IEDM) in San Francisco, AMD and IBM jointly presented a paper on a dual-stress liner (DSL) technique for straining both the NMOS and PMOS transistor channels in their 90-nm processes. IBM had
Computer Power User Article - What's Happening
block of computer chips. The IBM transistor combines silicon and germanium and can run at speeds as fast as 350 billion cycles per second. IBM expects within two years to release a high-speed communications chip based on the new transistor, which will feature low power consumption, making it ideal
Koen Snoeckx, Peter Verheyen, and Geert Eneman, gasps for breath, every instantly applicable solution that boosts transistor performance is more than welcome. Strain techniques, which introduce compressive or tensile stress in the transistor channel, provide such an elegant method of improving
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