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  • 6.09: Crucial Tech
    an error occurred while processing this directive] Once considered too exotic and expensive, germanium and gallium arsenide are starting to nudge out silicon as the new substrate for chips. [an error occurred while processing this directive] When the first transistor came out of Bell Labs in 1947
  • Computer Power User Article - Under Development
    and output, the source and drain. The new design features an input, an electrical output, and an optical output. Additionally, the new optical transistor is fashioned from gallium phosphide and gallium arsenide rather than the usual silicon and germanium. As injected electrical particles recombine
  • MICRO: 'Round the Circuit
    IMEC and National Semiconductor are working to develop a 180-nm process for silicon germanium based BiCMOS processes. The Belgian R &D consortium and the chipmaker are targeting low-power applications. National plans to offer the process by December 2003 at its fab in South Portland, ME
  • MICRO: Chipworks Corner
    IBM, AMD use different dual-stress liner At the 2004 IEEE International Electron Devices Meeting (IEDM) in San Francisco, AMD and IBM jointly presented a paper on a dual-stress liner (DSL) technique for straining both the NMOS and PMOS transistor channels in their 90-nm processes. IBM had
  • Computer Power User Article - What's Happening
    block of computer chips. The IBM transistor combines silicon and germanium and can run at speeds as fast as 350 billion cycles per second. IBM expects within two years to release a high-speed communications chip based on the new transistor, which will feature low power consumption, making it ideal
  • MICRO: Transistorama
    Koen Snoeckx, Peter Verheyen, and Geert Eneman, gasps for breath, every instantly applicable solution that boosts transistor performance is more than welcome. Strain techniques, which introduce compressive or tensile stress in the transistor channel, provide such an elegant method of improving

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