Products & ServicesSee also: Categories | Featured Products | Parts by Number | Technical Articles | More Information
Description: PNP germanium power transistors designed for high-current applications requiring high gain and extremely low saturation voltage.
- Polarity: PNP
- hfe: 15 to 180
- VCEO: 30 volts
- VCBO: 45 volts
Description: PNP Germanium transistor for switching and amplifier applications in the audio-frequency range.
Description: NPN GERMANIUM TRANSISTO
- Transistor Type / Technology: General Purpose BJT
- Polarity: NPN
Description: PNP alloy junction power transistor merting military specification MlL-T-19500, 36A. The maximum collector-emitter voltage rating is 50volts, and the collector current rating is 5 amperes.
- Polarity: PNP
Supplier: IHS Product Design
Description: SEMICONDUCTOR TRANSISTOR,GERMANIUM/TYPE-2N1646
Find Suppliers by Category Top
Featured Products for Transistor Germanium Top
American Microsemiconductor, Inc.
Bipolar Junction Transistor (BJT)
Description of bipolar transistor. The transistor is primarily used as a current amplifier. When a small current signal is applied to the base terminal of a bipolar transistor, it is amplified in the collector circuit. This current amplification is referred to as hfe or beta and equals Ic/Ib. As with all semiconductors, breakdown voltage of a transistor is also a design limitation. There are breakdown voltages that must be taken into account for each combination of terminals of a transistor... (read more)
Browse Power Bipolar Transistors Datasheets for American Microsemiconductor, Inc.
American Microsemiconductor, Inc.
links to our Technical Resources: Bipolar Transistor Tutorial. Diac Tutorial. Diode Tutorial. Diode Arrays Tutorial. ECG, SK, and NTE Components Tutorial. Germanium Diodes Tutorial. Junction FET Tutorial. MOSFETs Tutorial. SCR Tutorial Tutorial. Tunnel Diode and Back Diode Tutorial. Transient Voltage Supressor Tutorial. Triac Tutorial. Unijunction Transistor Tutorial. Varactor diode Tutorial. Zener Diode Tutorial. Pro Electron: Component Designation System Tutorial. The UJIT, CUJT, PUT, FLD... (read more)
Browse RF Diodes Datasheets for American Microsemiconductor, Inc.
American Microsemiconductor, Inc.
LOW NOISE GENERAL PURPOSE TRANSISTORS
LOW NOISE GENERAL PURPOSE Transistors from American Microsemiconductor. The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 hermetic metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. Quick Links: Product Specifications and ordering information for the. BC108- LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS. BC108B- NPN Transistor For General Purpose Audio Amplifiers. BC107- LOW NOISE GENERAL... (read more)
Browse Transistors Datasheets for American Microsemiconductor, Inc.
Parts by Number for Transistor Germanium Top
|Part #||Distributor||Manufacturer||Product Category||Description|
|NTE160||Allied Electronics, Inc.||NTE ELECTRONICS||Not Provided||TRANSISTOR PNP GERMANIUM 30V IC=.01A TO-72 RF-IF AMP FM MIXER OSCILLATOR|
|NTE102||Allied Electronics, Inc.||NTE ELECTRONICS||Not Provided||TRANSISTOR PNP GERMANIUM 25V 0.15A TO-5 PRE-AMP DRIVER OUTPUT|
|NTE127||Allied Electronics, Inc.||NTE ELECTRONICS||Not Provided||TRANSISTOR PNP GERMANIUM 320V IC=10A TO-3 POWER OUTOUT HORIZONTAL AND VERTICAL D|
|NTE28||RS Electronics||NTE||Not Provided||Germanium semiconductor transistor. Polarity is PNP, package:TO68 Japanese. Collector to base is 60 volts, to emitter is 45 volts. Maximum collector current is 60 amps, with typical forward current gain of 130.|
|NTE127||RS Electronics||NTE||Not Provided||Germanium semiconductor transistor. Polarity is NPN, package:TO4. Collector to base is 320 volts, to emitter is 320 volts. Maximum collector current is 10 amp, with typical forward current gain of 15.|
Conduct Research Top
Technical Reference: What is an FET and How Is It Different from a Bipolar Transistor?
A bipolar transistor is a current amplifying device. An input current results in an amplified output current Hfe=Ic/Ib... American Microsemiconductor manufacturers of Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrated Circuits and Semiconductors. Home. Online Store. Diodes
6.09: Crucial Tech
an error occurred while processing this directive] Once considered too exotic and expensive, germanium and gallium arsenide are starting to nudge out silicon as the new substrate for chips. [an error occurred while processing this directive] When the first transistor came out of Bell Labs in 1947
Technical Reference: Why is The Semiconductor Device Called a Tunnel Diode?
is the semiconductor device called a tunnel diode?. What is the chief application of the tunnel diode?. If I exceed the reverse breakdown voltage of a diode, will I destroy it?. Is a schottky diode the same as a shockley diode?. What is a back diode?. What is a unijunction transistor and is it a transistor?. What
Computer Power User Article - Under Development
and output, the source and drain. The new design features an input, an electrical output, and an optical output. Additionally, the new optical transistor is fashioned from gallium phosphide and gallium arsenide rather than the usual silicon and germanium. As injected electrical particles recombine
BiCMOS is a silicon-germanium (SiGe), bipolar semiconductor technology that combines the high speed of bipolar TTL with the low power-consumption of CMOS. Transistor-transistor logic (TTL) and complementary metal-oxide semiconductor (CMOS) are other, common semiconductor technologies
MICRO: 'Round the Circuit
. The partners have been working together since January 2002 to develop an 180-nm SiGe heterojunction bipolar transistor module. The second phase of the four-year contract calls
MICRO: Chipworks Corner
IBM, AMD use different dual-stress liner At the 2004 IEEE International Electron Devices Meeting (IEDM) in San Francisco, AMD and IBM jointly presented a paper on a dual-stress liner (DSL) technique for straining both the NMOS and PMOS transistor channels in their 90-nm processes. IBM had
Koen Snoeckx, Peter Verheyen, and Geert Eneman, gasps for breath, every instantly applicable solution that boosts transistor performance is more than welcome. Strain techniques, which introduce compressive or tensile stress in the transistor channel, provide such an elegant method of improving
More Information on: Transistor Germanium Top
germanium transistors NPN datasheets and application notes, data sheet, circuit, pdf, cross reference, pinout, datasheet | Datasheets.org.uk
First line: Germanium npn germanium transistors germanium transistors NPN germanium transistor Germanium Transistors Germanium Alloy transistors metal case Common (VCf 1mA) (MCB Characteristics Type Maximum ratings Characteristics Tamb= BVcso BVfSO 'c/w PTOT (V/mAI S/CE (mA/mA) \CBO (Vcs) 0.175 (0/500) (500/50 Abstract: ..
Germanium Power Diodes datasheets and application notes, data sheet, circuit, pdf, cross reference, pinout, datasheet | Datasheets.org.uk
Tags: NTE102A Germanium npn 650mW transistor germanium NTE103A* germanium transistors NPN germanium transistor pnp Germanium Power Diodes germanium diode equivalent germanium diode germanium NTE102A NTE103A .
K 1358 datasheets and application notes, data sheet, circuit, pdf, cross reference, pinout, datasheet | Datasheets.org.uk
Tags: smd diode sf MCR10EZHF1001 germanium small signal, power devices corporatio GERMANIUM SMALL SIGNAL TRANSISTORS germanium small signal 1080p* THS7368 .
Transistors and associated semiconductor devices. A review of progress
Germanium power alloy transistor Germanium power rectifier Silicon power rectifier Silicon power rectifier Type .
TRANSISTOR 187 datasheets and application notes, data sheet, circuit, pdf, cross reference, pinout, datasheet | Datasheets.org.uk
First line: NTE104MP germanium transistor transistor germanium NTE104 Germanium Transistor Audio Frequency Power Amplifier Description: NTE104 Germanium Alloy Junction transistor type package designed audio frequency power output amplifier.
The reliability of semiconductor devices in the bell system
ACTIVATION ENERGYDEVICE TYPE TRANSISTORS GERMANIUM , UNGETTERED .
Temperature Dependence of Junction Transistor Parameters
GERMANIUM NPN GROWN JUNCTION TRANSISTOR GERMANIUM NPN RATE GROWN JUNCTION TRANSISTOR SILICON NPN GROWN JUNCTION TRANSISTOR .
jfet p channel switch datasheets and application notes, data sheet, circuit, pdf, cross reference, pinout, datasheet | Datasheets.org.uk
...CFA* "BJT Transistors" TRANSISTORS BJT list transistor jfet power BJT PNP pnp germanium small signal bjt pnp germanium low power bjt pnp germanium bjt p jfet mosfet amp ic Low Capacitance bjt jfet discrete differential transistor germanium transistors NPN datasheet...