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Transistor Temperature Sensor

 

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Noncontact infrared temperature sensors absorb ambient infrared (IR) radiation given off by a heated surface. They are used in applications where direct temperature measurement is not possible.
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Partb # Distributor Manufacturer Product Category Description
7147389 RS Components, Ltd. STMicroelectronics Signal Conditioning Signal Conditioner Type:Amplifier; Input Type:Voltage; Input Range:+/-15 V; Output Type:Current, Voltage; Output Range:10 to 60 mA, 13.5 V; Sensor Compatibility:Bipolar Transistor, JFET Transistor; Mounting Type:PCB; Supply Voltage:+/-18 V; Minimum Operating Temperature:0C; Maximum Operating
0414165 RS Components, Ltd. Optek Photoelectric Sensors Sensor Style:Block; Detection Type:Retroreflective; Optical Technology:Phototransistor; Detection Range:1 to 762 mm; Output Type:Transistor; Maximum DC Voltage:30V; Terminal Type:Wire Lead; Minimum Operating Temperature:0C; Maximum Operating Temperature:+50C

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  • Applications of the TC62X Solid-State Temperature Sensors
    -. aged if the cooling system fails. High ambient temper-. bined with a switching transistor, wil turn on a fan at the. atures can also degrade performance or damage. preprogrammed temperature (Figure 8). Keeping the. components in communications systems, file servers,. fan turned off until cooling
  • Interfacing a TC1047A Analog Output Temperature Sensor to a PICmicro(R) Microcontroller
    diode is. created from a PNP transistor which is formed by. Collector. Base. Emitter. p+. n+. p+. n+. p+. n Well. p Substrate. PNP Transistor. Equivalent Diode. PNP Transistor in N-Well CMOS Technology. FIGURE 2: Temperature-Sensing Substrate Diode. DS00938A-page 2. 2004 Microchip Technology Inc. AN938
  • Interfacing a TC1047A Analog Output Temperature Sensor to a PICmicro(R) Microcontroller
    diode is. created from a PNP transistor which is formed by. Collector. Base. Emitter. p+. n+. p+. n+. p+. n Well. p Substrate. PNP Transistor. Equivalent Diode. PNP Transistor in N-Well CMOS Technology. FIGURE 2: Temperature-Sensing Substrate Diode. DS00938A-page 2. 2004 Microchip Technology Inc. AN938
  • Solving Thermal Measurement Problems Using The TC72 And TC77 Digital Silicon Temperature Sensors
    and voltage. diode, most silicon sensors use the substrate bipolar. relationship of a MOSFET diode is dependent on the. diode as the temperature-sensing element. Collector. Base. Emitter. p+. n+. p+. n+. p+. n Wel. p Substrate. PNP Transistor. Equivalent Diode. PNP Transistor in N-Wel CMOS Technology
  • Solving Thermal Measurement Problems Using The TC72 And TC77 Digital Silicon Temperature Sensors
    . Collector. Base. Emitter. p+. n+. p+. n+. p+. n Wel. p Substrate. PNP Transistor. Equivalent Diode. PNP Transistor in N-Wel CMOS Technology. FIGURE 2: Temperature-Sensing Substrate Diode. Fundamental Diode Equations. The non-ideality constant () for a silicon diode varies. from 0.95 to 1.05
  • Motor Control Sensor Feedback Circuits
    . · Current transformers. Gate Bipolar Transistor (IGBT) circuit legs can be. measured with a single shunt resistor, or that the. Shunt resistors are popular current sensors because. current in each individual leg can be determined with. they provide an accurate measurement at a low cost. three shunt
  • Photo Sensor Application Note
    in Figure 2-2.1(a). The anode of the LED is connected to the power line VCC via resistor RE and the cathode is grounded. Forward current IF is flowing through the LED and is emitting infrared light which is not visible to the eye. The collector of a photo transistor is connected to the power line VCC via
  • Operating Principles for Capacitive Proximity Sensors
    Proximity Sensor at a great price. $28.95 each. Battery powered LCD counter at a great price. $28.95 each. High operating temperature inductive sensors. 120 C / 248 F. Click here for full product. details and info on other special offers. OPERATING PRINCIPLES FOR CAPACITIVE PROXIMITY SENSORS. Capacitive

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