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Description: COVEGA's broad area laser diode is based on a highly efficient InP/InGaAsP Quantum Well (QW) layer structure. Advanced MBE epitaxial wafer growth techniques and die bonding processes enable reliable high-power laser diode operation.
- Laser Type: Laser Diodes
- Laser Wavelength: Infrared
- Features: Array
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Supplier: Thorlabs, Inc.
Description: structure. In addition to the advanced ridge waveguide, this device features advanced epitaxial structures, wafer processing techniques and die bonding processes. It is a multimode laser with output power in excess of 2 W.
- Laser Type: Laser Diodes
- Laser Output: Continuous Wave
- Laser Wavelength: Infrared
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Supplier: Chromalox
Description: Kapton®, a polyimide material that has high dielectric strength, allowing for a very thin heater construction. Chromalox uses Kapton® with two types of bonding systems; FEP Teflon® Thermo-flow polymer 392°F (200°C), and Acrylic Thermo-flow 250°F (121°C). Kapton®
- Heater Style: Etched Foil Elements
- Sleeve (Sheath) Material: None
- Features: UL Approved
- Heater Type: Flexible Heater
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Supplier: TriQuint Semiconductor, Inc.
Description: with eutectic alloy attachment methods as well as the thermocompression and thermosonic wire bonding processes. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in die form and is lead-free and RoHS compliant. Product Features Frequency range: DC
- Life Cycle Stage: Maturity
- Device Type: Other
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Featured Products for Wafer Bonding Top
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Precitec, Inc.
Measurement of Doped Wafers and TSVs
Sensors with submicron height resolution easily serve these typical applications: Wafer thickness on nearly all materials. Topographical measurements on structured samples. Mask thickness. Quality assurance on bondings (length of leads etc.). Measurement of coating thickness. Because of the small spot size, it is possible to use the CHRocodile sensors for measurement on any portion of the wafer, even at the edge. With the high speed and dynamic range, it is also possible to collect large volumes... (read more)
Browse Wafer and Thin Film Instrumentation Datasheets for Precitec, Inc. -
Olympus IMS
Visible and Nonvisible Imaging Techniques
and transmission of the nonvisible wavelengths. Near-IR is used in MEMS manufacturing and in wafer bonding to view the interior of a device to make sure it is sound and fault-free. This is possible because of the transparency of silicon and other substrates at near-IR wavelengths. Using near-IR, fast nondestructive inspection and measurement can be carried out in minutes without the need for any time-consuming or costly sample preparation. Additional demands from the MEMS market are for improved... (read more)
Browse Imaging Workstations Datasheets for Olympus IMS -
Precitec, Inc.
Fast Measurement for Semiconductor & PV Material
of sensor and probe configurations designed for nearly all materials. Some typical applications are: wafer thickness during grinding, polishing or etching. measurement of structures on semiconducturs, manufacturing of masks. quality assurance on bondings (length of leads etc.). measurement of coatings. determination of layer thickness. Real time measurement of thickness during the processing phase can eliminate waste, reduce overhead and ultimately improve your end product. Contact us for more... (read more)
Browse Process Monitors Datasheets for Precitec, Inc.
Parts by Number for Wafer Bonding Top
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| BY-WV-2-30-85-SR | Global Industrial | Avk Carbo-Bond/Bitorq Valve Automation | Not Provided | 3" Wafer Style Butterfly Valve W/ Viton Seals And Spring Return Pneum. Actuator |
| BY-WN-2-40-100-SR | Global Industrial | Avk Carbo-Bond/Bitorq Valve Automation | Not Provided | 4" Wafer Style Butterfly Valve W/ Buna Seals And Spring Return Pneum. Actuator |
| BY-WN-2-20-200-A-4-P1 | Global Industrial | Avk Carbo-Bond/Bitorq Valve Automation | Not Provided | 2" Wafer Style Butterfly Valve W/ Buna Seals And Nema 4 115vac Electric |
Conduct Research Top
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The Role of Wafer Bonding in 3D Integration and Packaging (.pdf)
There are numerous process integration schemes currently in place for the implementation of 3D-IC. Via first, via middle, via last along with back end of line (BEOL), front end of line (FEOL) and other variations of these approaches. This work will explore the role of wafer bonding, both permanent
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Metal Based Wafer Bonding Techniques for Wafer Level Packaging (.pdf)
Wafer level bonding utilizing metal based technologies are coming to the forefront of manufacturing methods in numerous 3D integration schemes and advanced MEMS processing. Copper to copper bonding of TSVs (through silicon vias) is used for 3D IC stacking of individual layers as well as in 3D
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Local Plasma Treatment in a Mask Aligner for Selective Wafer Surface Modification (.pdf)
Plasma pre-treatment for low-temperature direct wafer bonding is used worldwide in many different applications. In this process the full wafer surface is exposed to the plasma. Recently, a new process for selective plasma treatment has been developed by the FraunhoferIST and SUSS MicroTec
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Wafer & Substrate Bumping with Solder Paste
Targets. Target Bonding. PVD Coating Materials. Contact Us. Visit www.indium.com. Return to Indium Corporation Blogs Home ^. Wafer and Substrate Bumping with Solder Paste (I). Posted by Dr. Andy Mackie on Monday, August 23, 2010. This week's topic is both wafer bumping and substrate bumping with solder
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Balancing Electrical and Thermal Device Characteristics - Thru Wafer Vias vs. Backside Thermal Vias
or minimize the device thermal resistance. substrate (2) and covering the sidewalls with Au in a typical. The device design/process strategies include "flip-chip". thru-wafer via process. bonding, using metal heat shunts[1], thru-wafer via (TWV). holes connected to the device through large metal plates[2
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A Room Temperature, Low-Stress Bonding Process to Reduce the Impact of Use Stress on a Sputtering Target Assembly (.pdf)
size, commensurate with the. · Download. The strength and uniformity of the. article. increase in wafer diameter onto which bond between the target material and. · Share with. the refractory metal is to be deposited. backing plate are critical, as well as the. a friend. Specifically, as wafer
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
ST opens automated assembly line in Malaysia, pushes ahead in Singapore As planned, Don Brooks leaves UMC post TI closes $1.2 billion stock acquisition of Unitrode QuickLogic's IPO includes 3.3 million shares offered by Cypress SiGen teams with Electronic Visions on SOI wafer bonding system DSP
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
ASE to surpass Amkor in IC-packaging market, says report Merger rumors in foundry biz SiGen, EV Group forge wafer bonding alliance Apple cites Oxford Semi's ARM chip in Firewire drive failures Suppliers get hopeful for 2004 Tronics Microsystems opens Grenoble MEMS wafer fab Struggling Trikon raises
Engineering Web Search: Wafer Bonding Top
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Wafer Bond Equipment Pressure Sensor | Surface Contact...
Wafer Bonding Interface Surface Sensor Our tactile sensors allow you to measure the surface contact pressure
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Wafer Bonding | Wafer Bonding Press | Fujifilm Prescale |...
Wafer Bonding Wafer Polishing Windshield Wiper Wafer Bonding 511k Wafer Bonding Illustration 458k
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Temporary Bonding - SUSS MicroTec
Wafer Bonding Temporary Wafer Bonding Imprint Lithography Developing Wafer Bonding Temporary Wafer Bonding
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3D Interconnect aligned wafer bonding machines and wafer...
Unique in-situ aligned wafer bonding machines & services for IC, MEMS, Compound, Semiconductor & PV Industries
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EVG|EVGroup.com
EV Group Extends Wafer Bonding Equipment and Process Solutions for Covalent Bonding Technology
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Semefab - Wafer Bonding
Wafer Bonding Plasma Etch (6") Photo Lithography Wafer Bonding Company About Us Process Capability - Technology Platforms
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Wafer Bonding System offers single station bonding., SUSS...
Wafer Bonding System offers single station bonding.
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Silicon on insulator - Wikipedia, the free encyclopedia
Wafer bonding[10[11 â?? the insulating layer is formed by directly bonding oxidized silicon with a second substrate.