Schottky diodes (Schottky barrier diodes, Shottky diodes) consist of a metal layer which contacts a semiconductor element. The metal layer is heavily occupied with conduction-band electrons, but the N-type semiconductor region is lightly doped. When forward-biased, the higher-energy electrons in the N region are injected into the metal region, where they give up their excess energy very rapidly. The metal / semiconductor junctions exhibit rectifying behavior, allowing the current to pass through the structure more readily with one polarity than the other. Most Schottky diodes are used in high-frequency applications and fast-switching digital circuits. These hot-carrier diodes operate only with majority carriers. Because there are no minority carriers, there is no reverse-current leakage as with other types of diodes. Moreover, unlike conventional rectifier diodes, Schottky diodes exhibit a very rapid change in response to bias.
Schottky diodes differ in terms of diode applications and performance specifications. Application choices include: high-voltage, detector, mixer, rectifier diode, limiter, and switching. Repetitive peak reverse voltage or maximum reverse voltage is the maximum allowable instantaneous value of reverse voltage repeatedly applicable. Forward voltage is the specified forward current input for Schottky barrier diodes. Peak forward surge current is the maximum allowable surge value of forward current without repetition. Reverse recovery time is the time taken for the reverse current to reach a specified level when the reverse voltage is applied while the Shottky diode is conducting in the forward direction. Junction operating temperature is the range of temperatures over which Schottky diodes are designed to operate.
Schottky diodes use many different IC package types. Examples include: diode outline (DO), transistor outline (TO), small outline diode (SOD), , small outline transistor (SOT) discrete package (DPAK), and metal electrode leadless face (MELF). DO-4, DO-5, DO-8, DO-9, DO-15, DO-27, DO-34, DO-35, DO-41 and DO-201 are diode outline (DO) packages. TO-3, TO-66, TO-92, TO-202, TO-220, TO-237 and TO-247 are transistor outline (TO) packages. SOD-80, SOD-106, SOD-123, SOD-323, and SOD-523 are small outline diode (SOD) packages. SOT23, SOT26, SOT89, SOT143, SOT223, SOT323, SOT343, SOT346, SOT353, SOT363, SOT416, SOT457, and SOT523 are small outline transistor (SOT) packages. QuadroMELF, MicroMELF, and MiniMELF are types of MELF packages for Schottky diodes. D2PAK is a large surface-mounted package for a Schottky barrier diode that includes a heat sink. SC-59, SC-74, and SC-76 are plastic, surface-mounted Shottky diode packages with three leads.
Related Products & Services
Other Topics You Might Be Interested In
-
Schottky Diode Voltage Doubler - App Note
Note - AN 956-4; Schottky Diode Voltage Doubler (81 KB)...
-
Schottky Barrier Diodes
Schottky diodes, in their simplest form, consist of a metal layer that contacts a semiconducting element. This metal / semiconductor junction exhibits rectifying behavior (i.e., the current passes through the structure more readily with one polarity than the other). Schottky diodes are used...
-
Silicon Carbide Schottky Barrier Diodes - Taking Efficiency to the Next Level for PFC and Other Applications
(Epitaxial) Diode. 50 V-1,000 V. 1.2 V. 100 ns-500 ns. Si Standard Recovery Diode. 50 V-1,000 V. 1.0 V. 1 s-2 s. Silicon Carbide Schottky Barrier Diode. 600 V. 1.5 V. <15 ns. (1) @25°C. Si-based diodes have a wide increase at higher temperatures and are typically limited to 150°C operation. Table 1...
