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Development and Mechanisms of Action of a Ceria-Based Slurry for Shallow Trench Isolation CMP
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From Ferro Corporation-Electronic Material Systems
As the IC industry progresses through each successive technology node on the ITRS roadmap, to continually produce more demanding devices, new consumable materials are required to realize the high yields necessary for success. For the chemical mechanical planarization (CMP) process, silica-based slurries have traditionally been used at technology nodes of 90nm and higher, for both Shallow Trench Isolation (STI) and Inner Layer Dielectric (ILD) applications. At 65nm and below, cerium oxide-based slurries were introduced, since these slurries successfully address many of the issues resulting from the use of silica-based slurries. Products & Services
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Topics of Interest
As the IC industry progresses through each successive technology node on the ITRS roadmap, to continually produce more demanding devices, new consumable materials are required to realize the high...
(Read More)
New slurry formulations are described for both Shallow Trench Isolation (STI) and Inner Layer Dielectric (ILD) CMP applications. These formulations use cerium oxide as the abrasive, since the industry...
(Read More)
New slurry formulations have been developed for polishing oxide in both shallow trench isolation (STI) and inner layer dielectric (ILD) CMP processes. These formulations use cerium oxide as the...
(Read More)
The shallow trench isolation (STI) process is a key step in the production of leading-edge integrated circuit devices. In this process, silicon dioxide-filled trenches serve to electrically isolate...
(Read More)
Using a low defect ceria dispersion as a base material, formulations having drastically different polishing performance have been developed. It is well known that ceria can exhibit high oxide: nitride...
(Read More)
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