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In-Depth Analysis of MOCVD-Grown GaInP/Ga(In)As/Ge Triple Junction Solar Cells by Secondary Ion Mass Spectrometry

From Hiden Analytical

Concentration photovoltaic (PV) based on III-V solar cells is one of the most promising technologies for dramatically reducing the cost of PV electricity. In order to reduce costs, a high efficiency is usually pursued. This is the main reason for the huge development of multijunction cells (MJCs) which are able to achieve very high efficiencies thanks to their more efficient use of the solar spectrum.

In particular, GaInP/Ga(In)As/Ge triple junction solar cells represents the alternative with higher efficiency and lower cost. GaAs and other III-V semiconductors present high quality properties: a direct bandgap with high absortion, relatively insensitivity to temperature, and radiation resistance.

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