From Skyworks Solutions, Inc.
A comprehensive nonlinear model of GaAs resistor is
developed based on DC, pulse and power measurements. The
model accounts for electrical and thermal feathers such as
velocity saturation, self-heating and breakdown effects. The
resistor nonlinearity is mainly due to the velocity saturation, and
enhanced by self-heating effect. The model provides accurate
performances in DC, transient and harmonic balance
simulations, and is a useful tool for monolithic microwave
integrated circuits (MMICs) development.
Products & Services
Topics of Interest
6.5 THE FBH HBT MODEL The FBH Model  was developed by the author at the Ferdinand-Braun-Institut fur H chstfrequenztechnik, in Berlin, Germany. Its primarily goal was to facilitate the design of...
10.5 Integrated Circuit Examples This part of the chapter gives examples of analogue and digital GaAs circuits which have been chosen to give the reader an appreciation not only of performances and...
6.2 THE VBIC MODEL This model is the result of the joint efforts of various semiconductor and EDA companies to develop a new industry standard model for silicon bipolar transistors as a replacement...
OVERVIEW Extensive application of power electronics and other nonlinear components and loads creates single-time (e.g., spikes) and periodic (e.g., harmonics) events that could lead to serious...
6.3 THE UCSD HBT MODEL The UCSD model (or ARPA-UCSD model, since it was founded by ARPA) was the first comprehensive GaAs HBT model publicly available. It was developed in the mid-1990s as a...