From Skyworks Solutions, Inc.
With increasing scale and complexity in pHEMT
circuit and dimension shrinking in unit pHEMT devices,
distributed effects are becoming more crucial than ever. During
the design of amplifiers, precise prediction of the resistances of a
device is vital to the simulation result due to the direct impact on
impedance. This work reports a set of experiments utilizing
different testing structures to reveal how a pHEMT device's
layout affects its gate-to-source/drain resistances due to
distribution of resistance along electrodes and the consequent
current crowding. As an example, a distributed resistance model
of source-side gate bar is quantitatively analyzed. It is shown that
the prediction of the model coincides with the measurement data
obtained from a variety of testing devices with different numbers
of gate fingers.
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