From Skyworks Solutions, Inc.
The design highlight of a power amplifier
(PA) for 3G and beyond handset applications is to
maximize its power-added efficiency (PAE) with
specified linearity requirement at both peak and back-off
power levels. In addition to PAE, its cost and size are of
very important design considerations among others. The
design principle of a linear PA with good PAE is
summarized. An overview of different GaAs HBT
handset linear PA architectures is presented. Pros and
Cons of a single-ended PA and a balanced PA are
discussed. The packaging technologies to realize low
cost, small size and good performance for PA modules
are illustrated. A tri-power mode PA module packaged
in 3mm x 3mm x1mm size is developed using Skyworks
super efficiency at low power (SEAL) PA engine and
advanced packaging technologies.
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Topics of Interest
This paper reports the design and test data of a generic 2.5-W two-stage C-band MMIC power amplifier developed using the MSAG® MESFET process. We measured typically a minimum PAE of 45% and 2.5W...
Directional couplers are used in GSNI/EDGE and 3G power amplifier front end modules (PA F EMs) for radiated power detection and control. The radiated power varies with load VSWR. There are analyses on...
This paper presents a novel hardware reconfiguration technique implemented in a dual integrated-circuit (IC) GaAs HBT power amplifier (PA) design and demonstrates reduced current and improved...
Over the past decade, III-V devices, and modules containing them, have dominated the market for RF front end electronics in mobile handsets. GaAs-based hetero-junction bipolar transistors (HBTs) have...
Adaptive Digital Predistortion (DPD) is applied to a spec-compliant class-AB GaAs HBT PA module for WCDMA handsets. It is shown that, by using a re-optimized load line, the efficiency can be increased...
