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Low Noise Amplifier for 900 MHz using a Low Noise PHEMT - App Note

From Avago Technologies
 

 
The ATF-33143 is described in low noise amplifiers for use in the cellular markets. The circuits are designed for use with 0.032 inch thickness FR-4 printed circuit board material. The amplifiers make use of low cost, miniature, multilayer chip inductors for small size. When biased at a Vds of 4 volts and an Ids of 80 mA, the ATF-33143 amplifier will provide 17 to 19 dB gain, 0.5 dB noise figure and an output intercept point (IP3) of +31 to +33 dBm. An active bias solution using dual power supply techniques is discussed. Passive biasing schemes are generally preferred for their simplicity. One method of passive biasing requires the source leads be direct dc grounded. A negative voltage is applied to the gate through a bias de-coupling network. The gate voltage is then adjusted for the desired value of drain current. The gate voltage required to support a desired drain current, Id, is dependent on the device's pinchoff voltage, Vp, and the saturated drain current, Idss. Id is calculated with the following equation.
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Topics of Interest
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