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From avagotech.com
Like discrete transistors, the MSA Series of RF Integrated Circuits can be operated at different bias points to achieve different performance results. These Monolithic Silicon Amplifiers have an internal structure consisting of a Darlington connected pair of bipolar transistors embedded in a matrix of resistors. Since this structure is current controlled, the bias point of an MSA can best be described by specifying the total device current, Id.
Both power and gain can be adjusted by varying Id. Curves of typical performance as a function of bias are shown on the individual MSA data sheets. Table 1 lists the range of bias currents over which the various MSAs can be expected to operate. The column labeled “Minimum Recommended Operation” represents the lowest level at which Avago recommends operating the MSA. Operation of the MSA below this threshold causes the IC to be partially turned off; performance becomes unpredictable, and stability problems can result when the device is operated over temperature. There is no intrinsic reliability problem associated with operation below this bias level, however. The column labeled “Guaranteed Performance” lists the bias level at which Avago specifies and tests device performance. It represents a “typical” operating bias point. The “Maximum Recommended Operation” column lists Avago’s recommendation for the highest level of bias for the MSA.
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Bias tees allow the insertion of DC voltages into a signal path without disrupting the existing signal in that path.
Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.
Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors.
Photodiodes are used for the detection of optical power (UV, Visible, and IR) and for the conversion of optical power to electrical power.
Unijunction transistors (UJT) are three-terminal devices that exhibit a negative resistance characteristic.
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Biasing MSA Series RF Integrated Circuits - App Note (.pdf)
- RF, Microwave, and Wireless Components
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