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Silicon on sapphire (SOS) is a hetero-epitaxial process wherein a thin layer of silicon is 'grown” on a sapphire (Al2O3) wafer. SOS is part of the silicon on insulator (SOI) family of CMOS technologies. Silicon on sapphire is primarily used in military and space applications because of its inherent resistance to radiation. It has seen little commercial use to date because of difficulties in fabricating the very small transistors used in modern high-density applications. Problematically, the SOS process often results in the formation of dislocations from crystal lattice disparities between the sapphire and silicon. This leads to unusable wafers and drives up the production cost. Products & Services
Memory chips are internal storage areas in computers. Although the term “memory chip” commonly refers to a computer's random access memory (RAM), this product area includes many different types of electronic data storage. Computer memory stores data electronically in cells. Without memory chips, a computer could not read programs or retain data.
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Complex programmable logic devices (CPLDs) are integrated circuits (ICs) or chips that application designers configure to implement digital hardware such as mobile phones. CPLDs can handle significantly larger designs than simple programmable logic devices (SPLDs), but provide less logic than field programmable gate arrays (FPGAs).
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Learn more about Complex Programmable Logic Devices (CPLD)
Dynamic random access memory (DRAM) chips are single-transistor memory cells that use small capacitors to store each bit of memory in an addressable format that consists of rows and columns. Because capacitors are unable to hold a charge indefinitely, DRAM memory chips require a near-constant pulse of current to retain stored information.
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Erasable programmable read-only memory (EPROM) chips are programmable, reusable computer chips that can be erased using ultraviolet light and reprogrammed with a PROM programmer or PROM burner.
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Electrically erasable programmable read-only memory (EEPROM) chips are similar to PROM devices, but require only electricity to be erased.
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D.K. Sadana
Silicon-on-insulator (SOI) based devices and circuits increase chip speed, lower voltage operation and enhance resistance to cosmic ray induced soft error events. Advanced CMOS logic and...
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K. Izumi
2.1 INTRODUCTION
In 1966, Watanabe and Tooi [1] first reported on the formation of silicon oxide by oxygen-ion implantation into silicon. Their work, however, has not been followed by...
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L.P. Ren and K.N. Tu
8.1 OVERVIEW
The swift and continuous progress of silicon-on-insulator (SOI) technology in recent years has made it competitive to bulk silicon technology for ULSI...
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(Edited by S.S. Iyer)
18.1 Overview of SOI
S.S. Iyer
June 1998
Silicon-on-insulator (SOI) refers specifically to a single crystal film of silicon on a dielectric film, usually silicon oxide.
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2.5 Materials and Growth
2.5.1 Introduction to Materials for Microsystems
A good understanding of the physical properties of materials and the ways in which materials can be grown is an...
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