From Advanced Semiconductor Devices: Proceedings of The 2006 Lester Eastman Conference
Chapter List
- Hybrid Nanomaterials for Multi-Spectral Infrared Photodetection
- Ballistic Electron Acceleration Negative-Differantial-Conductivity Devices
ADRIENNE D. STIFF-ROBERTS
Department of Electrical and Computer Engineering, Duke University, Box 90291,
Durham, North Carolina 27708-0291, USA
adrienne.stiffroberts@duke. edu
Overview
Quantum dot infrared photodetectors (QDIPs) using quantum dots (QDs) grown by strained-layer epitaxy have demonstrated low dark current, multi-spectral response, high operating temperature, and infrared (IR) imaging. However, achieving near room-temperature, multi-spectral operation is a challenge due to randomness in QD properties. The ability to control dopant incorporation is important since charge carrier occupation influences dark current and IR spectral response. In this work, dopant incorporation is investigated in two classes of QDs; epitaxial InAs/GaAs QDs and CdSe colloidal QDs (CQDs) embedded in MEH-PPV conducting polymers. The long-term goal of this work is to combine these hybrid nanomaterials in a single device heterostructure to enable multi-spectral IR photodetection. Two important results towards this goal are discussed. First, by temperature-dependent dark current-voltage and polarization-dependent Fourier transform IR spectroscopy measurements in InAs/GaAs QDIPs featuring different doping schemes, we have provided experimental evidence for the important contribution of thermally-activated, defect-assisted, sequential resonant tunneling. Second, the enhanced quantum confinement and electron localization in the conduction band of CdSe/MEH-PPV nanocomposites enable intraband transitions in the mid-IR at room temperature. Further, by controlling the semiconductor substrate material, doping type, and doping level on which these nanocomposites are deposited, the intraband IR response can be tuned.
Keywords: Epitaxial quantum dots; colloidal quantum dots; hybrid nanocomposites, infrared photodetection.
1. Achieving Multi-Spectral Infrared Photodetection...
Products & Services
Topics of Interest
Chapter List Understanding Ultraviolet Emitter Performance Using Intensity Dependent Time-Resolved Photoluminescence Photocapacitance of Selectively Doped AlGaAS/GaAS Heterostructures...
Overview Pallab Bhattacharya, Xiaohua Su and Subhananda Chakrabarti Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor, Michigan Adrienne D.
Daniel Gammon Naval Research Laboratory Washington, D.C. 9.1 INTRODUCTION In a quantum dot (QD), an electron is localized in all three spatial dimensions. In the case of optically excited...
Anupam Madhukar, Eui-Tae Kim, and Zhonghui Chen, University of Southern California, and Joe Campbell and Zhengmao Ye, University of Texas at Austin 3.1 Introduction A solid, when confined in...
Mats-Erik Pistol, Werner Seifert, and Lars Samuelson Solid State Physics, Lund University Lund, Sweden 3.1 INTRODUCTION During the last decade there has been increasing interest in...