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Charge Reduction of Photoresist with Hitachi's S-4700
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Charge Reduction of Photoresist with Hitachi's S-4700
 
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Charge Reduction of Photoresist with Hitachi's S-4700
From hitachi-hta.com
When imaging semiconductors specimens containing photo resist Hitachi’s S-4700 New ExB Filter can reduce charge appearance so that discrete atomic differences can be distinguished. By selectively filtering out the low energy electrons that contain information about the very surface of the specimen, where charge is prevalent, the appearance of charge can be eliminated. By using the new ExB Filter the image contrast becomes compositional in nature. At low accelerating voltages (2kV) the specimen can be examined for compositional information while charge is removed from the image and beam drift is reduced at the sample. The following micrographs demonstrate the usefulness of the new E X B filter: 1. To reduce charge in the image. (At the area of the photoresist) 2. To enhance compositional contrast. (Visible layering of materials) 3. To image very small atomic layers in a semiconductor device. (At the area of ZrO2)
 


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Electron microscopes use a focused beam of electrons instead of light to "image" the specimen and gain information as to its structure and composition.
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