Carbon Nanotube Field-Effect Transistors On GlobalSpec

Overview

This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experiments can be explained and device designs optimized. The paper concludes with some thoughts on challenges and opportunities for CNTFET electronics.

Keywords:

Carbon nanotubes, CNTFET, nanodevice simulation.

1. Introduction

Since the first reports of single-walled carbon nanotubes (CNTs) in 1993,1 ^,2 they have been the subject of intense interest for basic and applied research. Carbon nanotubes are sheets of graphene (a semi-metal) rolled into a tube.3 Depending on the way the sheet is rolled up (its chirality) the CNT may be metallic or semiconducting.3 ^,4 Interest in carbon nanotubes is driven by their exceptional electronic, optical, thermal, and mechanical properties.3 ^,4 Semiconducting nanotubes are direct bandgap semiconductors with E _G ? 0.8/D eV, where D is the nanotube diameter in nanometers. Typical diameters are 1 2nm, and the resulting bandgaps are suitable for room temperature electronics. Low-field transport is near-ballistic with mobilities as high as ~20,000 cm ²/V-s...

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