From Edwards Vacuum
Atomic layer deposition (ALD) processes require vacuum conditions both for proper deposition and adequate purging of precursors from the chamber. Since the ALD process is surface driven, the high percentages of unreacted precursors that exit process chambers will tend to deposit inside vacuum pumps, which can result in pump failures after <100 wafers. Because of inherently different reaction mechanisms, vacuum systems for CVD do not work for ALD. Therefore, new and sophisticated hardware is needed, including reactive gas injection and pumps dedicated to each different precursor.
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Topics of Interest
The rapid atomic layer deposition (RAD) process module from Genus boosts ALD deposition rates to ~100 Å/min, more than five times that of conventional ALD . The new ALD chamber on the StrataGem...
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