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From Avago Technologies
The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly forty years [1]. Earlier designs were inefficient because so much of the signal power was used to generate the unwanted fundamental mixing product. Harmonic mixing conversion loss was 3 to 5 dB worse than fundamental mixing conversion loss. Within the past decade this problem was solved with an improved circuit which does not allow fundamental mixing, the antiparallel pair [2, 3]. This circuit has the additional advantage of suppressing local oscillator noise and all even order mixing products. However, the degree of suppression of these unwanted products is related to the matching of the diode pair. Adjacent diodes on a wafer are nearly identical electrically. However, it is difficult to separate diodes while maintaining knowledge of each diode's position on the wafer. This problem is solved by making the diodes as monolithic pairs with a cathode-anode connection that remains when the wafer is separated. Figure 1 shows a Schottky pair with the capacitance of each diode less than 0.10 pF. Capacitance difference is less than 0.02 pF. Figure 2 shows the diode dimensions. This monolithic pair is available in the medium barrier version as HSCH-5511 as well as the low barrier HSCH-5531. Products & Services
PIN diodes are three-layer semiconductor diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other diode parameters determines the resistance of the diode at RF and microwave frequencies.
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Schottky diodes in their simplest form consist of a metal layer that contacts a semiconductor element. The metal / semiconductor junctions exhibit rectifying behavior (i.e., the current passes through the structure more readily with one polarity than the other).
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Diode arrays are composed of multiple discrete (usually unconnected) diodes on a single silicon chip. Diode arrays are important semiconductor products because they save assembly time and improve reliability over individually packaged diodes. In general, diode arrays use four or more diodes in a single package.
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RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices.
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Power diodes are used mainly in high-power applications. They are built with large P-N junctions in order to pass large amounts of current and dissipate large amounts of heat.
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7.5 Diode Mixers
The Schottky barrier diode has been the primary non-linear device for microwave mixers. Figure 7.4 shows its equivalent circuit. Also indicated are the key equations defining the...
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A series of general purpose RF Schottky diodes has been introduced in the SOT-23 package. One of these diodes, the HSMS-2822, is a matched series pair, an ideal configuration for a balanced mixer.
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The capacitance across the pair of wires = ( D1 || D2 ) + P0640EC/SC. The diode capacitance is approximately (10 pF || 10 pF ) 20 pF. Then adding the capacitive effect of the P0640EC/SC, which is...
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Schottky diodes, based on silicon or gallium arsenide substrates, are used in many receiver and transmitter circuits for mixing and detecting at frequencies up to 100 GHz. Today, advanced wafer and...
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This Application Note describes the characteristics of Avago Technologies Schottky Barrier Diodes intended for use in video detector or video receiver circuits, and discusses some design features of...
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