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TA029: Generic 2.5-W 60% Bandwidth C-Band MMIC Amplifier

From M/A-COM
 

 
This paper reports the design and test data of a generic 2.5-W two-stage C-band MMIC power amplifier developed using the MSAG® MESFET process. We measured typically a minimum PAE of 45% and 2.5W CW output power over the 4.5 to 7.4 GHz for the MMIC chip packaged on CuW carrier. The output power and PAE for ceramic packaged chips were reduced by about 0.5 dB and 3% points, respectively. During the past decade there has been significant progress in monolithic power amplifiers operating at RF and microwave frequencies over narrow-bands and broad-bands for both commercial and military applications. For numerous applications including handset, VSAT and transmit/receive modules, these amplifiers are produced in large quantities using MESFET, HBT and PHEMT technologies [1-12]. Several packaging technologies are being employed including plastic, ceramic, and carrier mounting to develop cost effective power amplifier products. MMIC power amplifiers have the following potential advantages as compared to internally matched power amplifiers.
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