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TA025: 10W CW Broadband Balanced Limiter / LNA Fabricated Using MSAG® MESFET Process

From M/A-COM
 

 
This paper presents the design and test data for a 10W broadband balanced limiter/LNA MMIC fabricated using MSAG MESFET process. The limiter is based on Schottky diodes and the 2-stage LNA is designed using high performance MESFETs. The typical measured performance for the limiter/LNA circuit includes gain greater than 14 dB, NF less than 2.7 dB, and return loss better than 20 dB over the 8.5 to 11.5 GHz frequency range. The CW power handling for the packaged Limiter/LNA circuits was greater than 10W. The packaged devices were also exposed to power levels greater than 10W and no catastrophic failures were observed up to 18W. GaAs MMICs are widely used in commercial and military microwave systems. Due to the fine geometry used in MMIC transistors, these circuits are susceptible to damage from high power spurious EM radiation either from microwave transmitters or the nuclear electromagnetic pulse. Especially, LNAs in the front-end of microwave systems need high power protection because these amplifiers can sustain only low input power levels in the range of 10 to 20 dBm CW or 1 to 3 µJ of pulsed power.
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Topics of Interest
GaAs monolithic microwave integrated circuits (MMICs) are widely used in commercial and military microwave systems. Due to the fine geometry used in MMIC transistors, these circuits are susceptible to... (Read More)
This paper reports the design and test data of a generic 2.5-W two-stage C-band MMIC power amplifier developed using the MSAG® MESFET process. We measured typically a minimum PAE of 45% and 2.5W... (Read More)
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