06/03/2013

Integra Debuts New RF Devices Fully Matched to 50 ohms.

06/03/2013

Integra Expands Portfolio of Devices for the L-band Avionics Market.

06/03/2013

Ready to Sample 2.7-2.9GHz S-band ATC GaN-on-SiC Devices.

06/03/2013

Seattle, WA (USA) – June 4, 2013 – Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsed RF transistors and amplifiers,

06/06/2011

Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsed RF transistors, today announced the development of two Gallium Nitride on Silicon Carbide (GaN/SiC) technology devices targeted for the C-band market.

06/06/2011

Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsed RF transistors, today announced the development of two Gallium Nitride on Silicon Carbide (GaN on SiC) technology devices targeted for the L-band market.

06/06/2011

Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsed RF transistors, today announced the development of two Gallium Nitride on Silicon Carbide (GaN on SiC) technology devices targeted for the military communication market.

06/06/2011

Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsed RF transistors, today announced the development of Gallium Nitride on Silicon Carbide (GaN on SiC) technology.