Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsed RF transistors, today announced the development of two Gallium Nitride on Silicon Carbide (GaN on SiC) technology devices targeted for the military communication market.
Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsed RF transistors, today announced the development of Gallium Nitride on Silicon Carbide (GaN on SiC) technology.
Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsed RF transistors, today announced the development of two Gallium Nitride on Silicon Carbide (GaN/SiC) technology devices targeted for the C-band market.
Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsed RF transistors, today announced the development of two Gallium Nitride on Silicon Carbide (GaN on SiC) technology devices targeted for the L-band market.
