API has been providing solutions to some of the largest OEMs in the Medical market to improve performance and lower operating cost since 1992. (read more)
We have a proud heritage of delivering superior products with unmatched customer service. From components to fully integrated optoelectronic sub-systems, we have the diversity and breadth of product lines and experience to provide the performance solutions our military customers require. (read more)
Our core technologies of silicon and III-V semiconductor fabrication give us the unique ability to provide components, sub-systems and systems for baggage, portal (people) and package scanning for both currently available based systems and work with our partners on the next generation systems based on our patented terahertz technologies. (read more)
Silicon (Si) photodiodes can be coupled with a low noise preamplifier chip in the same package. This configuration makes them highly resistant to external noise and suitable for compact circuit design. Additionally, devices can also be provided with a built-in thermoelectric cooler to reduce the dark current and enhance performance. (read more)
These devices consist of a number of photosensitive areas imaged on a single substrate forming a one-dimensional array with a common cathode substrate. They feature low crosstalk among adjacent elements and high uniformity in response. (read more)
The silicon avalanche photodiode (Si APD) is a photon detection device that offers high internal gain. It is ideal for use in high speed, low light level applications. API also offers several patented large area configurations (LAAPD) enhanced for a variety of regions of the spectrum. (read more)
These Planar diffused photodiodes are designed for either photoconductive (low capacitance, high speed applications) or photovoltaic operation (low noise, DC applications). Photodiodes are semiconductors that generate a current or voltage when illuminated by light. (read more)
These Planar diffused photodiodes are designed for either photoconductive (low capacitance, high speed applications) or photovoltaic operation (low noise, DC applications). (read more)
API offers custom LED design and packaging of a variety of emitter configurations and spectral enhancements. (read more)
These devices consist of a number of photosensitive areas imaged on a single substrate forming a one-dimensional array with a common cathode substrate. (read more)
Advanced Photonix, Inc.® manufactures photoconductive cells to match your specifications. (read more)
Silicon (Si) photodiodes can be coupled with a low noise preamplifier chip in the same package. This configuration makes them highly resistant to external noise & suitable for compact circuit design. (read more)
The silicon avalanche photodiode (Si APD) is a photon detection device that offers high internal gain. It is ideal for use in high speed, low light level applications. (read more)
Indium Gallium Arsenide (InGaAs) PIN photodiodes are detectors with a spectral response range of 0.9 µm – 1.7 µm, deliver high-speed response and low noise due to a low terminal capacitance and a large shunt resistance. (read more)
These UV, Gallium Nitride (GaN) and Silicon Carbide (SiC), sensors are intended for use in the spectral region of 200 nm to 400 nm where maximum quantum efficiency is required at these wavelengths. (read more)
Cadmium Sulfoselenide (CdS) sensors are low cost photoconductive devices for visible light measurement. (read more)
These specialized photodiodes have a narrow spectral response centered at 880 nm. Since the photodiode itself has a narrow spectral response, the device can be used without expensive band pass filters. (read more)
These high output power IR LED's are available in several different lensed or flat window packages. This provides LED's with wide selection of beam angles and package types. The LED's for use with pulse oximetry have both the RED and IR transmittance. (read more)
The SD441-23-41-221 features a large area 1064nm enhanced high voltage P-type silicon segmented quadrant detector mounted in a one inch 8-pin TO package. This device is designed to provide very high responsivity at 1064nm, ultra low capacitance and fast response times. (read more)
