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Gen 3 1,200 V SiC Schottky Diodes

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Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs. The diodes’ MPS structure, which features a backside thinned via laser annealing technology, reduces their forward-voltage drop. The devices’ low typical reverse leakage current reduces conduction losses, ensuring high system efficiency during light loads and idling. To further improve efficiency, the Gen 3 diodes have virtually no recovery tail, unlike ultrafast diodes.

These diodes offer AC/DC PFC and DC/DC ultra-high frequency output rectification in FBPS and LLC converters for applications such as solar power inverters, energy storage systems, industrial drives and tools, and datacenters.

Features
  • Increased robustness:
    • Operating temperatures up to +175°C
    • Forward surge ratings to 260 A
    • Molding compound with a high CTI greater than or equal to 600 ensures excellent electrical insulation at elevated voltages (D2PAK 2L package)
  • Increased reliability:
    • Pass higher temperature reverse bias (HTRB) testing of 2,000 hours and temperature cycling testing of 2,000 thermal cycles
  • Available with forward current from 5 A to 40 A
  • Offered in TO-220AC 2L, TO-247AD 2L, and TO-247AD 3L through-hole and D2PAK 2L (TO-263AB 2L) surface-mount packages
  • Increase efficiency:
    • Low forward voltage drop: down to 1.35 V
    • Low capacitance charge: down to 28 nC
    • Low typical reverse leakage current: down to 0.3 µA at +25°C