MASTERGAN1 High Power Density Half-Bridge

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STMicroelectronics' high power density half-bridge high voltage driver includes two 650 V enhancement-mode GaN HEMTs
STMicroelectronics' MASTERGAN1 is the first 600 V half-bridge driver with a GaN HEMT system in package (SiP) in the world and the first element of MASTERGAN platform. MASTERGAN1 is compact, making it possible to implement the high power density power supply, even four times smaller than the power supply based on MOSFET switches, thanks to higher switching frequency of GaNs and high integration of both the driver and two GaN switches in the same package. It also offers robustness. The offline driver is optimized for GaN HEMT for fast, effective, and safe driving and layout simplification. The management of discreet GaN switches could be tough, but the embedded driver manages GaN switches to simplify power supply design.
  • Power SiP integrating half-bridge driver and GaN transistors
  • Reduced BOM cost
  • Efficient
  • Robust
  • Simplified board layout
  • 3.3 V to 20 V compatible inputs
  • Input pin tension compatible with wide voltage range and independent by device VCC
  • Interlocking function
  • Automatic management of interlocking situation
  • Switch-mode power supplies
  • Chargers and adapters
  • High-voltage PFCs
  • DC/DC and DC/AC converters
  • UPS systems
  • Solar powe