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Sapphire (Al2O3) Substrates and Wafers

Featured Product from Hangzhou Shalom Electro-optics Technology Co., Ltd.

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Features:

  • Excellent mechanical and thermal robustness, anti-chemical corrosion, electrical insulation 
  • Maximum diameter: 6 inches, circular/square and custom shapes available
  • 1000-grade clean room production and 100-grade box/bag package
  • Standard or Custom
  • Orientations: C-Cut, A-Cut, R-Cut, M-Cut, or Custom
  • Ideal for epitaxial thin film growth of various materials:  III-V and II-VI compound semiconductors (Blue/White/Violet LEDs), Microelectronic IC applications (Silicon on Sapphire Integrated Circuit, SOS), Hybrid Microelectronics (HIC/MCM), ferromagnetic/ferroelectric thin film growth

 

Sapphire(Al2O3) is an excellent substrate material for the epitaxial growth of various thin films. Sapphire has excellent high-temperature resistance, chemical corrosion resistance, electrical insulation, wide optical transmission, unrivaled mechanical hardness, and wear resistance. The molecular bonding of sapphire is strong, enabling the production of thinner pieces without fracture. 

Sapphire Wafers and Substrates are versatile, their uses include but are not limited to III-V and II-VI compound thin film growth for semiconductor Light Emitting Diodes(LEDs), Y-series, La-series high temperature superconducting (HTSC) thin films,  Microelectronic IC (Silicon on Sapphire Integrated Circuit, SOS), Hybrid Microelectronic applications, and ferromagnetic/ferroelectric thin film growth.

A-plane Sapphire Substrates are suitable alternatives for Hybrid Microelectronic applications, which mainly include HIC and MCM, due to their uniform dielectric constants and high electrical insulations. TlBaCaCuO (TbBaCaCuO), Tl-2212, the hetero-epitaxial superconducting thin film could grow with success on an a-plane sapphire cerium oxide (CeO2) composite substrate to obtain angstrom level surface finishes.

Whilst R-plane sapphire substrates find great usage in the hetero-epitaxial deposition of silicon for Microelectronic IC (High-Speed Silicon On Sapphire, SOS).

C-plane Sapphire substrates and wafers are also the mainstream options to perform the Metal Organic Chemical Vapor Deposition (MOCVD) growth of a series of III-V and II-VI compound thin films beside GaN, such as AlN, AlGaN, and InGaN. Sapphire is a preferred substrate material to manufacture current blue, violet, and white light-emitting diodes (LEDs), and blue laser diodes (LDs).

Regarding the ferroelectric and magnetic thin film growth, sapphire substrates epitaxial growth using rf?planar magnetron sputtering of ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT), and epitaxial PLZT thin films on sapphire substrates have been testified to be one of the candidates worth noticing to manufacture new functional electronics. When assign to the sputter deposition of Pb(Zr,Ti)O3 (PZT) ferroelectric thin films, sapphire substrates also shows a lower degree of disorientation between the crystallites compared to on Si substrate and ideal breakdown voltage. Sapphire substrates could be competent in the ferromagnetic thin film growth of Mn1−xS (e.g. M-plane sapphire substrates for LP-MOCVD growth of MgxZn1-xO in solar-blind ultraviolet detection), pulsed laser deposition of Cr2O3 and other cobalt, Mn5Ge3Cx, etc. too.

Hangzhou Shalom EO offers off-the-shelf and custom sapphire substrates and wafers for epitaxial thin film growth. Shalom EO has eminent capabilities and endeavors to produce high-precision sapphire wafers. We select single crystal sapphire with superior sapphire purities to fabricate the wafers and substrates. A series of advanced equipment is utilized to manufacture our products in a 1000-grade clean room. Before shipment, we conduct XRD diffraction analysis and use Atomic Force Microscope (AFM) (Click Here to see the reports in the technical imaging section) to inspect the product to ensure optimum surface qualities of the product. The standard versions have a c-cut orientation, whilst other orientations including a-plane, r-plane, and m-plane are also available. The maximum diameter is 6 inches, and substrates could either be single-side polished or double-side polished. In addition to the standard circular shapes, other shapes like square and rectangular are also available.