CoolSiC™ Schottky diode 650 V G6
Product Announcement from Infineon Technologies AG
The CoolSiC™ generation 6 is the leading edge technology in SiC Schottky Barrier diodes, fully leveraging all advantages of SiC over silicon. The Infineon proprietary diffusion soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system.
The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Qc x VF). The CoolSiC™ generation 6 diodes complement Infineon’s 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.
- The lowest VF: 1.25 V
- Best-in-class figure of merit (Qc x VF)
- No reverse recovery charge
- Temperature independent switching behavior
- High dv/dt ruggedness
- Optimized thermal behavior