RF SP3T switch with enhanced ESD level

Featured Product from Infineon Technologies AG


The BGS13S4N9 RF MOS switch is specifically designed for cell phone and mobile applications. Any of the 3 ports can be used as termination of the diversity antenna handling up to 30 dBm. It offers outstanding ESD robustness of 1kV.

Benefits and features:

  • 3 high-linearity TRx paths with power handling capability of up to 30 dBm
  • Low insertion loss
  • Low harmonic generation
  • High port-to-port-isolation
  • 0.1 to 3.0 GHz coverage
  • No decoupling capacitors required if no DC applied on RF lines
  • On-chip control logic including ESD protection
  • General Purpose Input-Output (GPIO) Interface
  • Small form factor 1.1mm x 1.1mm x 0.375mm
  • No power supply blocking required
  • High EMI robustness
  • RoHS and WEEE compliant package

Learn more: BGS13S4N9