Bipolar Magnetic Switch with Passive Memory Effect

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TMR1215 Bi-stable TMR Bipolar Magnetic Switch with Passive Memory Effect
The TMR1215 is a bi-stable digital bipolar magnetic switch that integrates TMR and CMOS technology in order to provide a magnetically triggered digital switch with high sensitivity, high speed, and ultra-low power consumption. It integrates a push-pull half-bridge TMR magnetic sensor and CMOS signal processing circuitry within the same package. Compared with conventional magnetic switch sensors, TMR1215 can detect and store the ON/OFF state triggered by magnetic polarity without power supply, and the latest state can be retrieved immediately after power supply is resumed. Designed for use in applications that are power-critical, performance-demanding, and failsafe, this device includes an on-chip TMR voltage generator for precise magnetic sensing, TMR voltage amplifier and comparator, a Schmitt trigger to provide switching hysteresis for noise rejection, and CMOS push-pull output. An internal band gap regulator is used to provide temperature compensated supply voltage for internal circuits, and it allows a wide range of operating supply voltages. The TMR1215 draws only 1.5μA resulting in ultra-low power operation, additionally it has fast response, accurate switching points, excellent thermal stability, and immunity to stray field interference. It is available in two packaging form factors: SOT23-3 (P/N TMR1215S), or TO-92S (P/N TMR1215T).

Features and Benefits

  • Tunneling Magnetoresistance (TMR) Technology
  • Ultra Low Power Consumption at 1.5uA
  • Passive Operation with Magnetic Memory Effect
  • High Frequency Response at 1KHz
  • Bipolar Latching Operation
  • Compatible with a Wide Range of Supply Voltages
  • Excellent Thermal Stability
  • High Tolerance to External Magnetic Field Interference.


  • Utility Meters including Water, Gas, and Heat Meters
  • Solid State Switches
  • Speed Sensing
  • Bi-stable Level Switches in Elevator Doors
  • Magnetic Flip Level Gauges
  • Rotary and Linear Position Sensing.


MDT Releases Bi-stable TMR Magnetic Switch Sensors with Passive Magnetic Memory Effect MDT's Unique TMR Technology Realizes Passive Magnetic Memory Effect for High-end Industrial Applications
MultiDimension Technology Co., Ltd. (MDT), a leading supplier of magnetic sensors specializing in Tunneling Magnetoresistance (TMR) technology, has released three models of bi-stable TMR magnetic switch sensors TMR1212/TMR1213/TMR1215. They are low-power bipolar latching TMR switch sensors that can detect and retain the ON/OFF state triggered by magnetic polarity without power supply. The passive magnetic memory effect is ideally suited for level switches in elevator doors, magnetic flip level gauges, non-contact magnetic knobs, and many industrial applications that require failsafe operations in position and speed measurement.

In the event of power failures, TMR1212/TMR1213/TMR1215 can store the ON/OFF state passively, and the latest state can be retrieved immediately after power supply is resumed. They are designed for high-speed operations in an always-active mode with 1.5microAmpere low power consumption. Their switching sensitivities are rated from 20 to 90 Gauss to support a variety of use conditions.

"MDT's bi-stable TMR switch sensors are the first-of-a-kind on the market among all semiconductor-based magnetic sensor technologies including Hall Effect, AMR (Anisotropic Magnetoresistance), GMR (Giant Magnetoresistance), and TMR. Compared with a bi-stable Reed switch that requires a pair of magnets to realize the latching function thus resulting in a large form factor, our bi-stable TMR switch sensors offer a much compact footprint in standard SOT23 or TO92 packages, competitive cost-effectiveness, improved reliability, and the unique combination of passive operation along with the high-speed active mode in low-power," said Dr. Song Xue, Chairman and CEO of MultiDimension Technology. "Thanks to our strong IP portfolio and advanced manufacturing facilities, we are able to offer customers the best value of our TMR technology that combines the key benefits of existing magnetic sensor technologies while overcoming their limitations in a steadily growing TMR sensor product family."

MDT is the industry's first volume supplier of TMR sensors. Designed and fabricated with its patented TMR technology and self-owned manufacturing facility, MDT's TMR sensors feature a number of distinctive benefits, including low power, high sensitivity, low noise, and passive operation with magnetic memory effect. They are ideal choices for a variety of industrial, automotive, consumer and medical sensor applications.

TMR Switch Sensors

MultiDimension Technology(MDT®) was founded in 2010 in Zhangjiagang, Jiangsu Province, China, with branch offices in Ningbo, Shanghai, and Chengdu, China and San Jose, Calif., USA. MDT has developed an unique intellectual property portfolio, and state-of-the-art manufacturing capabilities that can support volume production of high-performance, low-cost TMR magnetic sensors to satisfy the most demanding application needs. Led by its core management team of experts in magnetic sensor technology and engineering services, MDT is committed to creating added value for its customers and ensuring their success. 
MDT ’s Service Options Include:

  • In-plane and Z-axis TMR sensors, which may be delivered as wafers, bare dice, or packaged devices
  • Custom design for TMR/GMR/AMR sensors
  • ASIC design for integration with TMR/GMR/AMR sensors
  • Foundry service for TMR/GMR/AMR sensors including thin-film deposition, device processing, packaging and testing
  • Custom sensor module design and application solutions
  • IP licensing, granting customers access to MDT ’s technology for use in their products