Vishay introduces 16 new 650V and 1200V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. These devices are engineered to deliver exceptional speed and efficiency for high-frequency applications, offering the optimal balance between capacitive charge (QC) and forward voltage drop for diodes in their class.

The new series includes dual-diode components ranging from 40A to 240A and single-phase bridge devices rated at 50A and 90A. Built with advanced thin wafer technology, these diodes feature a low forward voltage drop of 1.36V, drastically reducing conduction losses and increasing overall system efficiency. Additionally, they offer superior reverse recovery characteristics compared to Si-based diodes, with virtually no recovery tail, further improving performance in demanding applications.

These Schottky diodes are ideal for high-speed switching applications in AC/DC PFC and DC/DC ultra-high-frequency output rectification, including FBPS and LLC converters for photovoltaic systems, EV charging stations, industrial UPS, and telecom power supplies. Their low QC, down to 56nC, ensures fast switching performance and higher efficiency for high-frequency power conversion.

The diodes are designed for operation in harsh environments, with a high-temperature rating of up to +175°C and a positive temperature coefficient for easy paralleling. UL-approved to file E78996, the devices feature a large creepage distance between terminals for added safety. The simplified mechanical design also allows for quick assembly, making these diodes an ideal drop-in replacement for competing solutions.

For more information, contact New Yorker Electronics at 201-750-1171 or email sales@newyorkerelectronics.com.