10W, DC-12GHz, GaN on SiC RF Transistor

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The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant.  Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.