150W, DC-2.7GHz, GaN on SiC RF Transistor
Featured Product from Qorvo
The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an over-molded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz.
The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package.
Lead-free and ROHS compliant. Evaluation boards are available upon request.